VISHAY TLMK3100

TLMK3100
Vishay Telefunken
High Intensity SMD LED
Color
Red
Type
TLMK3100
Technology
AlInGaP on GaAs
Angle of Half Intensity
±ö
60°
Description
This device has been designed to meet the increasing
demand for AlInGaP technology.
The package of the TLMK3100 is the P–LCC–2
(equivalent to a size B tantalum capacitor).
It consists of a lead frame which is surrounded with a
white thermoplast. The reflector inside this package is
filled up with clear epoxy.
Features
D
D
D
D
D
SMD LED with exceptional brightness
Luminous intensity categorized
Compatible with automatic placement equipment
94 8553
EIA and ICE standard package
Compatible with infrared, vapor phase and wave
solder processes according to CECC
D Available in 8 mm tape
D Low profile package
D Non-diffused lens: excellent for coupling to light
pipes and backlighting
D Low power consumption
D Luminous intensity ratio in one packaging unit
IVmax/IVmin
x 2.0
Applications
Automotive: backlighting in dashboards and switches
Telecommunication: indicator and backlighting in telephone and fax
Indicator and backlight for audio and video equipment
Indicator and backlight in office equipment
Flat backlight for LCDs, switches and symbols
General use
Document Number 83040
Rev. A2, 04-Feb-99
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TLMK3100
Vishay Telefunken
Absolute Maximum Ratings
Tamb = 25_C, unless otherwise specified
TLMK3100
Parameter
Reverse voltage
DC forward current
Surge forward current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
Test Conditions
Symbol
VR
IF
IFSM
PV
Tj
Tamb
Tstg
Tsd
RthJA
Tamb ≤ 60°C
tp ≤ 10 ms
Tamb ≤ 60°C
t≤5s
mounted on PC board
(pad size > 16 mm2)
Value
5
30
0.1
80
100
–40 to +100
–55 to +100
260
400
Unit
V
mA
A
mW
°C
°C
°C
°C
K/W
Optical and Electrical Characteristics
Tamb = 25_C, unless otherwise specified
Red (TLMK3100 )
Parameter
Luminous intensity
Dominant wavelength
Peak wavelength
Angle of half intensity
Forward voltage
Reverse voltage
Junction capacitance
Test Conditions
IF = 10 mA
IF = 10 mA
IF = 10 mA
IF = 10 mA
IF = 20 mA
IR = 10 mA
VR = 0, f = 1 MHz
Type
Symbol
IV
ld
lp
ϕ
VF
VR
Cj
Min
10
Typ
18
630
643
±60
1.9
Max
Unit
mcd
nm
nm
deg
V
V
pF
2.6
5
15
Typical Characteristics (Tamb = 25_C, unless otherwise specified)
60
IF – Forward Current ( mA )
PV – Power Dissipation ( mW )
125
100
75
50
25
40
30
20
10
0
0
0
95 10887
50
20
40
60
80
100
Tamb – Ambient Temperature ( °C )
Figure 1 Power Dissipation vs. Ambient Temperature
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0
95 10894
20
40
60
80
100
Tamb – Ambient Temperature ( °C )
Figure 2 Forward Current vs. Ambient Temperature
Document Number 83040
Rev. A2, 04-Feb-99
TLMK3100
Vishay Telefunken
10
°
20
°
40°
1.0
0.9
50°
0.8
60°
70°
0.7
80°
0.6
0.4
0.2
0
0.2
0.4
2.0
30°
1.2
1.0
0.8
0.6
0.4
0.2
0
1
I Vrel– Relative Luminous Intensity
1.5
2.0
2.5
Figure 4 Forward Current vs. Forward Voltage
20
50
I100
F(mA)
1
0.5
0.2
tp/T
1.2
1.0
0.8
0.6
0.4
0.2
0
10 20 30 40 50 60 70 80 90 100
Tamb – Ambient Temperature ( °C )
Figure 5 Rel. Luminous Intensity vs. Ambient Temperature
Document Number 83040
Rev. A2, 04-Feb-99
10
100
IF – Forward Current ( mA )
Figure 7 Relative Luminous Intensity vs. Forward Current
I Vrel– Relative Luminous Intensity
IF = 10 mA
0
10
2
0.10
96 11588
1.6
1.4
5
5
1.00
0.01
1
3.0
VF – Forward Voltage ( V )
95 10878
2
10.00
10
1
1
10
Figure 6 Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle
100
I F – Forward Current ( mA )
1.4
96 11589
Figure 3 Rel. Luminous Intensity vs. Angular Displacement
I Vrel– Relative Luminous Intensity
1.6
0.6
95 10319
95 10880
1.8
I Vrel– Relative Luminous Intensity
Iv rel – Relative Luminous Intensity
0°
1.2
IF = 10 mA
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
600 610 620 630 640 650 660 670 680 690 700
96 12075
l – Wavelength ( nm )
Figure 8 Relative Luminous Intensity vs. Wavelength
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TLMK3100
Vishay Telefunken
Dimensions in mm
95 11314
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Document Number 83040
Rev. A2, 04-Feb-99
TLMK3100
Vishay Telefunken
PCB Layout in mm
95 10966
Document Number 83040
Rev. A2, 04-Feb-99
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TLMK3100
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
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Document Number 83040
Rev. A2, 04-Feb-99