ETC TSML3700-GS08

TSML3700
Vishay Telefunken
GaAs/GaAlAs Infrared Emitting Diode in SMT Package
Description
TSML3700 is an infrared emitting diode in GaAlAs on
GaAs technology in a miniature PL–CC–2 SMD package.
It has been designed to meet the increasing demand
on optoelectronic devices for surface mounting.
The package consists of a lead frame which is surrounded with a white thermoplast. The reflector inside
the package is filled up with clear epoxy.
This new package achieves an improvement of 100%
in radiant intensity, compared with the old SOT–23
package.
94 8553
Features
D
D
D
D
D
SMT IRED with extra high radiant power
D
D
D
D
D
D
Available in 8 mm tape
Low forward voltage
Compatible with automatic placement equipment
EIA and ICE standard package
Suitable for infrared, vapor phase and wavesolder process
Suitable for pulse current operation
Extra wide angle of half intensity ϕ = ± 60°
Peak wavelength lp = 925 nm
High reliability
Matching to TEMT3700 phototransistor
Applications
Infrared source in tactile keyboards
IR diode in low space applications
Matching with phototransistor TEMT3700 in reflective sensors
High performance PCB mounted infrared sensors
High power infrared emitter for miniature light barriers
Document Number 81034
Rev. 3, 20-May-99
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TSML3700
Vishay Telefunken
Absolute Maximum Ratings
Tamb = 25_C
Parameter
Reverse Voltage
Forward Current
Peak Forward Current
Surge Forward Current
Power Dissipation
Junction Temperature
Operating Temperature Range
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
Test Conditions
Symbol
VR
IF
IFM
IFSM
PV
Tj
Tamb
Tstg
Tsd
RthJA
tp/T = 0.5, tp = 100 ms
tp = 100 ms
t
x10sec
Value
5
100
200
1
170
100
–55...+100
–55...+100
260
450
Unit
V
mA
mA
A
mW
°C
°C
°C
°C
K/W
Basic Characteristics
Tamb = 25_C
Parameter
Forward Voltage
g
Temp. Coefficient of VF
Reverse Current
Junction Capacitance
Radiant Intensity
y
Radiant Power
Temp. Coefficient of fe
Angle of Half Intensity
Peak Wavelength
Spectral Bandwidth
Temp. Coefficient of lp
Rise Time
Fall Time
Test Conditions
IF = 100 mA, tp = 20 ms
IF = 1 A, tp = 100 ms
IF = 100mA
VR = 5 V
VR = 0 V, f = 1 MHz, E = 0
IF = 100 mA, tp = 20 ms
IF = 1 A, tp = 100 ms
IF = 100 mA, tp = 20 ms
IF = 100 mA
IF = 100 mA
IF = 100 mA
IF = 100 mA
IF = 20 mA
IF = 1 A
IF = 20 mA
IF = 1 A
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Symbol
VF
VF
TKVF
IR
Cj
Ie
Ie
fe
TKfe
ϕ
lp
Dl
TKlp
tr
tr
tf
tf
Min
Typ
1.3
2.2
–1.3
Max
1.7
100
2.5
20
7
60
32
–0.8
±60
925
50
0.2
800
500
800
500
Unit
V
V
mV/K
mA
pF
mW/sr
mW/sr
mW
%/K
deg
nm
nm
nm/K
ns
ns
ns
ns
Document Number 81034
Rev. 3, 20-May-99
TSML3700
Vishay Telefunken
Typical Characteristics (Tamb = 25_C unless otherwise specified)
104
IF – Forward Current ( mA )
PV – Power Dissipation ( mW )
250
200
150
RthJA
100
50
103
102
tp = 100 ms
tp / T = 0.001
101
100
0
0
20
40
60
80
100
Tamb – Ambient Temperature ( °C )
94 8029 e
0
Figure 1. Power Dissipation vs. Ambient Temperature
V Frel – Relative Forward Voltage
IF – Forward Current ( mA )
75
RthJA
50
25
0
1.1
IF = 10 mA
1.0
0.9
0.8
0.7
0
20
40
60
80
100
Tamb – Ambient Temperature ( °C )
94 7916 e
0
Tamb
tp/T=0.005
1000
v60°C
0.01
0.05
0.2
0.5
DC
1
0.01
60
80
100
100
0.02
10
40
Figure 5. Relative Forward Voltage vs.
Ambient Temperature
I e – Radiant Intensity ( mW/sr )
10000
20
Tamb – Ambient Temperature ( °C )
94 7990 e
Figure 2. Forward Current vs. Ambient Temperature
IF – Forward Current ( mA )
4
3
1.2
100
95 9985
2
Figure 4. Forward Current vs. Forward Voltage
125
100
1
VF – Forward Voltage ( V )
94 7952 e
0.1
10
1
0.1
0.1
1
10
100
tp – Pulse Length ( ms )
Figure 3. Pulse Forward Current vs. Pulse Duration
Document Number 81034
Rev. 3, 20-May-99
100
15903
101
102
103
IF – Forward Current ( mA )
104
Figure 6. Radiant Intensity vs. Forward Current
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TSML3700
Vishay Telefunken
1.25
Fe rel – Relative Radiant Power
Fe – Radiant Power ( mW )
1000
100
10
1
1.0
0.75
0.5
0.25
IF = 100 mA
0
875
0.1
100
101
102
103
IF – Forward Current ( mA )
94 8740
104
Figure 7. Radiant Power vs. Forward Current
Figure 9. Relative Radiant Power vs. Wavelength
0°
I e rel – Relative Radiant Intensity
1.6
I e rel ; Fe rel
1.2
IF = 20 mA
0.8
0.4
975
925
l – Wavelength ( nm )
12757
10
°
20
°
30°
40°
1.0
0.9
50°
0.8
60°
70°
0.7
80°
0
–10 0 10
94 7993 e
50
100
140
Tamb – Ambient Temperature ( °C )
Figure 8. Rel. Radiant Intensity\Power vs.
Ambient Temperature
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0.6
0.4
0.2
0
0.2
0.4
0.6
94 8013 e
Figure 10. Relative Radiant Intensity vs.
Angular Displacement
Document Number 81034
Rev. 3, 20-May-99
TSML3700
Vishay Telefunken
Dimensions in mm
95 11314
Document Number 81034
Rev. 3, 20-May-99
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TSML3700
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
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Document Number 81034
Rev. 3, 20-May-99