Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 DL5711 DL6263 Features • • For general purpose applications These diodes are also available in the DO-35 case with type designation 1N5711 and 1N6263, in the Micro-MELF case with type designation MCL5711 and MCL6263. Small Signal Schottky Diodes Maximum Ratings MINIMELF Repetitive Peak Reverse Voltage VR DL5711 70V DL6263 60V tp<10uS, Maximum Forward IFSM 2.0A TA=25OC Surge Current Power Dissipation PTOT 400mW* Junction Temperature TJ 125OC Storage Temperature TSTG -55~+150OC Range * Valid provided that electrodes are kept at ambient temperature Cathode Mark C B A Electrical Characteristics @ 25°C Unless Otherwise Specified Maximum Forward Voltage VF Minimum Reverse Breakdown voltage DL5711 DL6263 Maximum Leakage current Maximum Junction Capacitance Maximum Reverse recovery time Maximum Thermal resistance junction to Ambient Air VR 0.41V 1.0V IF = 1.0mA IF = 15mA IR 70V 60V 200nA VR=50V CJ 2.0pF VR=0, f=1MHz trr 1.0ns IF=5.0mA , IR=5.0mA , RθJA DIMENSION DIM INCHES MM NOTE MIN MAX MIN MAX A B .134 .008 .142 .016 3.40 0.20 3.60 0.40 C .055 .059 1.40 1.50 SUGGESTED SOLDER PAD LAYOUT 0.105 0.075” 0.3K/ W 0.030” www.cnelectr .com DL5711,DL6263 Fig.1 Typical variation of fwd. current vs forward. voltage for primary conduction through the Schottky barrier Fig.2 Typical forward conduction curve of combination Schottky barrier and PN junction guard ring mA mA IF IF VF VF Fig.3 Typical variation of reverse current at various temperatures Fig.4 Typical capacitance curve as a function of reverse voltage PF mA TJ=25 C IR CJ VR VR www.cnelectr .com