CHONGQING RB2510

CHONQING G PINGYANG ELECTRONICS CO.,LTD.
BR2505 THRU BR2510
SINGLE-PHASE SILICON BRIDGE RECTIFIER
VOLTAGE:50-1000V
CURRENT:25.0A
BR-25
FEATURES
.500
(12.7)
· Plastic case with heatsink for Maximum Heat
Dissipation
·Surge overload ratings-300 Amperes
·Low forward voltage drop
TYP.
M E TA L H E AT S IN K
.452
M AX
(11.5)
.480(12.2)
.425(10.8)
1.142(29.0)
1.102(28.0)
.673(17.1)
.633(16.1)
MECHANICAL DATA
·Case:Metal or plastic shell with plastic encapsulation
·Epoxy: UL 94V-0 rate flame retardant
· Terminals: Plated .25”(6.35mm) Faston lugs,
Solderable per MIL-STD- 202E, Method 208
guaranteed
·Polarity: As marked
·Mounting: Thru hole for 8# screw
·Weight: 30 grams
H O LE FO R
NO . 8 SC REW
AC
.732(18.6)
.692(17.6)
1.142(29.0)
AC
.582(14.8)
.543(13.8)
.6 73 (1 7.1) 1.102(28.0)
.6 33 (1 6.1)
.033x.250
(0.8x6.4)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz,resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL BR2505 BR251 BR252 BR254 BR256 BR258 RB2510 units
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
Maximum Average Forward rectified Output
Current at TC=55°C
Peak Forward Surge Current 8.3ms single half
sine-wave superimposed on rate load (JEDEC
method)
Maximum Forward Voltage Drop per element at
12.5A DC
Maximum DC Reverse Current
@ TA=25°C
at Rated DC Blocking Voltage
@ TA=100°C
per element
VRRM
VRMS
VDC
50
35
50
100
70
100
200
140
200
400
280
400
600
420
600
800
560
800
1000
700
1000
V
V
V
Io
25
A
IFSM
300
A
VF
1.1
V
IR
2
I2t
I t Rating for Fusing (t<8.3ms)
CJ
Typical Junction Capacitance (Note 1)
RθJA
Typical Thermal Resistance (Note 2)
Notes: 1.Measured at 1MHz and applied reverse voltage of 4.0 volts
2.Thermal Resistance from Junction to Case per leg
1
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10
µA
500
374
300
2.5
A2S
pF
°C/W