CHONGQING PINGYANG ELECTRONICS CO.,LTD. KBU8A/RS801 THRU KBU8M/RS807 SINGLE-PHASE SILICON BRIDGE RECTIFIER VOLTAGE：50-1000V CURRENT：8.0A FEATURES KBU ·Low leakage ·Low forward voltage ·Surge overload ratings-250 Amperes ·Molded structure .935(23.7) .895(22.7) .300 (7.5) .780(19.8) .740(18.8) .700(17.8) .600(16.8) - AC 1.00 (25.4) + MIN. .052(1.3) DIA. .048(1.2) TYP. .140 (5.3) .220(5.6) SPACING .180(4.6) .280(7.0) .268(6.8) MECHANICAL DATA ·Case: Molded plastic ·Epoxy: UL 94V-0 rate flame retardant ·Lead: MIL-STD- 202E, Method 208 guaranteed ·Polarity: Symbols molded or marked on body ·Mounting position: Any ·Weight: 8.0 grams Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase, half wave, 60Hz,resistive or inductive load. For capacitive load, derate current by 20%. SYMBOL Maximum Recurrent Peak Reverse Voltage Maximum RMS Bridge Input Voltage Maximum DC Blocking Voltage Maximum Average Forward rectified Output Current at TC=75°C Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rate load (JEDEC method) Maximum Forward Voltage Drop per element at 4.0A DC Maximum DC Reverse Current @ TA=25°C at Rated DC Blocking Voltage @ TA=100°C per element VRRM VRMS VDC RS801 RS802 RS803 RS804 RS805 RS806 RS807 KBU8A KBU8B KBU8D KBU8G KBU8J KBU8K KBU8M 50 35 50 100 70 100 200 140 200 400 280 400 600 420 600 800 560 800 1000 700 1000 units V V V Io 8.0 A IFSM 250 A VF 1.0 V IR 10 µA 500 2 2 It 127 A Sec I2t Rating for Fusing (t<8.3ms) CJ 186 pF Typical Junction Capacitance (Note 1) RθJA 10 Typical Thermal Resistance (Note 2) °C/W Notes: 1.Measured at 1MHz and applied reverse voltage of 4.0 volts 2.Thermal Resistance from Junction to Ambientwith units mounted on 0.47×0.47”(12×12mm) copper pads １ PDF 文件使用 "pdfFactory Pro" 试用版本创建 www.fineprint.cn