Clairex ® CLT135 Technologies, Inc. NPN Silicon Phototransistor July, 2001 0.210 (5.33) 0.190 (4.83) 0.190 (4.83) 0.176 (4.47) 0.500 (12.7) min 0.215 (5.46) 0.205 (5.21) COLLECTOR 0.158 (4.01) 0.136 (3.45) BASE N/C EMITTER 0.100 (2.54) dia 0.025 (0.64) max 0.060 (1.52) max 0.147 (3.73) 0.137 (3.48) 0.019 (0.48) 0.016 (0.41) ALL DIMENSIONS ARE IN INCHES (MILLIMETERS) Case 17 features absolute maximum ratings (TA = 25°C unless otherwise stated) storage temperature ...................................................................... -65°C to +150°C • high sensitivity operating temperature ................................................................... -65°C to +125°C • ± 9° acceptance angle lead soldering temperature(1) ......................................................................... 260°C • custom aspheric lensed TO-18 collector-emitter voltage..................................................................................... 30V package continuous collector current ............................................................................ 50mA • transistor base is not bonded (2) • tested and characterized at 940nm continuous power dissipation .................................................................... 250mW • usable throughout visible and near notes: infrared spectrum 1. 0.06” (1.5mm) from the header for 5 seconds maximum • RoHS compliant 2. Derate linearly 2.0mW/°C from 25°C free air temperature to TA = +125°C. description The CLT135 is an NPN silicon phototransistor mounted in a TO-18 package which features a custom double convex glass-to-metal sealed aspheric lens. Narrow acceptance angle enables excellent on-axis coupling. The CLT135 is spectrally and mechanically matched to the CLE135 IRED. For additional information, call Clairex. electrical characteristics (TA = 25°C unless otherwise noted) symbol IL ICEO parameter min typ max Light current(3) 1.0 2.5 - mA VCE = 5V, Ee = 0.5mW/cm2 - - 25 nA VCE = 10V, Ee = 0 30 - - V IC = 100µA - 3.0 - µs IC = 1.0mA, VCE=5V, RL=100Ω. 18 - deg. Collector dark current V(BR)CEO Collector-emitter breakdown tr, tf Output rise and fall time θHP Total angle at half sensitivity points units test conditions notes: 3. Radiation source is an aluminum gallium arsenide IRED operating at a peak emission wavelength of 940nm Clairex reserves the right to make changes at any time to improve design and to provide the best possible product. Clairex Technologies, Inc. Phone: 972-265-4900 1301 East Plano Parkway Fax: 972-265-4949 Revised 3/16/06 Plano, Texas 75074-8524 www.clairex.com