® CLT130W, CLT131W, CLT132W NPN Silicon Phototransistors 0.210 (5.33) 0.190 (4.83) Technologies, Inc. The CLT130W, CLT131W and CLT132W are exact replacements for obsolete part numbers CLT2020, CLT2030 and CLT2035. 0.190 (4.83) 0.176 (4.47) Clairex July, 2001 0.500 (12.7) min 0.215 (5.46) 0.205 (5.21) COLLECTOR 0.160 (4.06) 0.150 (3.81) BASE EMITTER 0.100 (2.54) dia 0.010 (0.25) max 0.025 (0.64) max 0.147 (3.73) 0.137 (3.48) 0.019 (0.48) 0.016 (0.41) ALL DIMENSIONS ARE IN INCHESCase (MILLIMETERS) 18 Collector electrically connected to case. features absolute maximum ratings (TA = 25°C unless otherwise stated) storage temperature ...................................................................... -65°C to +200°C • high sensitivity operating temperature.................................................................... -65°C to +150°C • ± 35° acceptance angle (1) • TO-18 hermetically sealed package lead soldering temperature ......................................................................... 260°C collector-emitter voltage..................................................................................... 30V • transistor base is bonded (2) continuous collector current ......................................................................... 50mA • RoHS compliant continuous power dissipation(3) .................................................................... 250mW description notes: The CLT130W, CLT131W and 1. 0.06” (1.5mm) from the header for 5 seconds maximum. CLT132W are silicon NPN planar 2. 200mA when pulsed at 1.0ms, 10% duty cycle. epitaxial phototransistors mounted in 3. Derate linearly 1.6mW/°C from 25°C free air temperature to TA = +150°C. TO-18 flat window packages. The wide acceptance angle provided by the flat window enables even reception over a relatively large area. For additional information, call Clairex electrical characteristics (TA = 25°C unless otherwise noted) symbol parameter Light current(4) IL ICEO CLT130W CLT131W CLT132W Collector dark current min typ max units 0.4 1.0 2.5 - - mA mA mA VCE=5V, Ee=5.0mW/cm2 VCE=5V, Ee=5.0mW/cm2 VCE=5V, Ee=5.0mW/cm2 25 nA VCE=10V, Ee=0 - test conditions V(BR)CEO Collector-emitter breakdown 30 - - V IC=100µA, Ee=0 V(BR)CBO Collector-base breakdown 5.0 - - V IC=100µA, Ee=0 V(BR)ECO Emitter-collector breakdown 5.0 - - V IE=100µA, Ee=0 VCE(sat) Collector-emitter saturation voltage - - 0.30 V IC=0.4mA, Ee=5.0mW/cm2 VCC=5V, RL=1KΩ tr, tf Output rise and fall time(5) - 3.0 - µs θHP Total angle at half sensitivity points - 70 - deg. notes: 4. Radiation source for all light current testing is a 850nm IRED. 5. The radiation source is a pulsed gallium arsenide IRED with rise and fall times of ≤0.3µs. Clairex reserves the right to make changes at any time to improve design and to provide the best possible product. Clairex Technologies, Inc. Phone: 972-265-4900 1301 East Plano Parkway Fax: 972-265-4949 Revised 3/22/06 Plano, Texas 75074-8524 www.clairex.com