® CLD340 Clairex Technologies, Inc. High Temperature AlGaAs Photodiode January, 2002 0.100 (2.54) dia. 1.00 (25.4) min. 0.156 (3.96) 0.136 (3.45) 0.165 (4.19) 0.145 (3.68) 0.215 (5.46) 0.205 (5.21) ANODE 0.190 (4.83) 0.176 (4.47) CATHODE 0.025 (0.64) max. 0.010 (0.25) max 0.147 (3.73) 0.137 (3.48) 0.019 (0.48) 0.016 (0.41) ALL DIMENSIONS ARE IN INCHES(MILLIMETERS) Case 3 features • usable at 225°C • 880nm wavelength • narrow response range • hermetically sealed TO-46 package • ±35° acceptance angle description The CLD340 is a high temperature AlGaAs photodiode designed for sensitivity from 830 to 910nm. This specialty detector eliminates the need for signal modulation or filtering of ambient light when used where background illumination could cause problems. The 0.040" by 0.040" chip is mounted in a flat window TO-46 package. The CLE335 is recommended for optical coupling. absolute maximum ratings (TA = 25°C unless otherwise stated) storage temperature ....................................................................... -65°C to +250°C operating temperature .................................................................... -65°C to +225°C lead soldering temperature(1) ...........................................................................260°C reverse voltage ................................................................................................... 10V continuous power dissipation(2) ..................................................................... 250mW notes: 1. 0.06” (1.5mm) from the header for 5 seconds maximum. 2. Derate linearly 1.0mW/°C from 25°C free air temperature to TA = +225°C. fundamental characteristics spectral response light current vs temp. 100 16 70 60 50 40 AlGaAs photodiode 30 20 10 0 600 H = 1mW/cm², and λ = 850nm at 25°C short circuit dark current (nA) 80 1.0 18 silicon photodiode light current (microamps) relative response (percent) 90 dark current vs temp. 20 CLE335 source at same temperature as CLDX340. CLD340 14 12 10 8 6 4 10 -1 10 -2 10 -3 2 700 800 900 1000 wavelength (nanometers) 110 0 -4 10 0 50 100 150 temperature (°C) 200 25 0 50 Clairex reserves the right to make changes at any time to improve design and to provide the best possible product. Clairex Technologies, Inc. Phone: 972-265-4900 1301 East Plano Parkway Fax: 972-265-4949 100 150 temperature (°C) 200 Revised 3/6/06 Plano, Texas 75074-8524 www.clairex.com 25 CLD340 ® Clairex Technologies, Inc. High Temperature AlGaAs Photodiode electrical characteristics at TA = 25°C (unless otherwise noted) symbol parameter min typ max units test conditions 2.0 3.5 - µA VBIAS = 0V, Ee = 1mW/cm2 VR = 5V, Ee = 0 ISC Short-circuit current(3) ID Dark current - 0.1 1.0 nA RS Shunt resistance - 3000 - Meg.Ω VBR Reverse breakdown 20 - - V IR = 10µA Cj Junction capacitance - 170 - pF VBIAS = 0, f = 1MHz - 70 - deg. - 1.0 - µs ΘHP tr, tf Total angle at half sensitivity points (3) 0utput rise and fall time VR = 10mV RL = 50Ω, VR = 5V note: 3. Radiation source is an aluminum gallium arsenide IRED with a peak emission wavelength of 850nm. Clairex reserves the right to make changes at any time to improve design and to provide the best possible product. Clairex Technologies, Inc. Phone: 972-265-4900 1301 East Plano Parkway Fax: 972-265-4949 Plano, Texas 75074-8524 www.clairex.com