CYStech Electronics Corp. NPN Epitaxial Planar Transistor BVCEO IC RCESAT BTC1510J3 Spec. No. : C652J3 Issued Date : 2003.05.16 Revised Date :2009.02.04 Page No. : 1/7 150V 10A 220mΩ Description The BTC1510J3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed switching application. Features: • High BVCEO • Low VCE(SAT) • High current gain • Monolithic construction with built-in base-emitter shunt resistors • TO-252 surface mount package • RoHS compliant package Equivalent Circuit Outline TO-252 BTC1510J3 C B R1≈8k R2≈120 B：Base C：Collector E：Emitter BTC1510J3 E B C E CYStek Product Specification CYStech Electronics Corp. Spec. No. : C652J3 Issued Date : 2003.05.16 Revised Date :2009.02.04 Page No. : 2/7 Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol Limits Unit VCBO VCEO VEBO IC(DC) IC(Pulse) Pd(TA=25℃) Pd(TC=25℃) Tj Tstg 150 150 5 10 15 1.75 20 150 -55~+150 V V V *1 Note : *1. Single Pulse Pw=100ms A W °C °C Characteristics (Ta=25°C) Symbol BVCBO BVCEO ICEO ICBO IEBO *VCE(sat) 1 *VCE(sat) 2 *VCE(sat) 3 *VBE(sat) *VBE(on) 1 *VBE(on) 2 *VFEC *hFE1 *hFE2 Min. 150 150 2 100 Typ. - Max. 200 200 2 1.5 3 2 2 2.8 4.5 3 20 - Unit V V μA μA mA V V V V V V V K - Test Conditions IC=100μA, IE=0 IC=1mA, IB=0 VCE=150V, IE=0 VCB=150V, IE=0 VEB=5V, IC=0 IC=5A, IB=10mA IC=10A, IB=100mA IC=5A, IB=2.5mA IC=5A, IB=5mA VCE=3V, IC=5A VCE=3V, IC=10A IC=5A VCE=3V, IC=5A VCE=3V, IC=10A *Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2% Ordering Information Device BTC1510J3 BTC1510J3 Package TO-252 (RoHS compliant) Shipping Marking 2500 pcs / Tape & Reel C1510 CYStek Product Specification Spec. No. : C652J3 Issued Date : 2003.05.16 Revised Date :2009.02.04 Page No. : 3/7 CYStech Electronics Corp. Characteristic Curves Saturation Voltage vs Collector Current Current Gain vs Collector Current 10000 100000 Saturation Voltage---(mV) Current Gain--- HFE HFE@VCE=3V 10000 125℃ 1000 75℃ 100 25℃ 10 VCE(SAT)@IC=250IB 25℃ 1000 100 1 10 100 1000 100 10000 10000 Collector Current---IC(mA) Saturation Voltage vs Collcetor Current Saturation Voltage vs Colltctor Current 10000 VCE(SAT)@IC=2000IB VCE(SAT)@IC=500IB Saturation Voltage---(mV) Saturation Voltage---(mV) 1000 Collector Current---IC(mA) 10000 75℃ 25℃ 1000 125℃ 100 1000 25℃ 75℃ 1000 125℃ 100 10000 100 Collector Current---IC(mA) 1000 10000 Collector Current---IC(mA) Saturation Voltage vs Collcetor Current Power Derating Curve 10000 2 1.75 25℃ Power Dissipation---PD(W) VBE(ON)@VCE=3V On Voltage---(mV) 125℃ 75℃ 75℃ 1000 125℃ 1.5 1.25 1 0.75 0.5 0.25 0 100 100 1000 Collector Current---IC(mA) BTC1510J3 10000 0 50 100 150 200 Ambient Temperature---TA(℃) CYStek Product Specification CYStech Electronics Corp. Spec. No. : C652J3 Issued Date : 2003.05.16 Revised Date :2009.02.04 Page No. : 4/7 Characteristic Curves(Cont.) Power Derating Curve Power Dissipation---PD(W) 25 20 15 10 5 0 0 50 100 150 200 Case Temperature---TC(℃) BTC1510J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C652J3 Issued Date : 2003.05.16 Revised Date :2009.02.04 Page No. : 5/7 Reel Dimension Carrier Tape Dimension BTC1510J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C652J3 Issued Date : 2003.05.16 Revised Date :2009.02.04 Page No. : 6/7 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature BTC1510J3 Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. CYStek Product Specification CYStech Electronics Corp. Spec. No. : C652J3 Issued Date : 2003.05.16 Revised Date :2009.02.04 Page No. : 7/7 TO-252 Dimension C A Marking: D B C1510 G F L 3 H E K Style: Pin 1.Base 2.Collector 3.Emitter 2 I 1 J 3-Lead TO-252 Plastic Surface Mount Package CYStek Package Code: J3 *: Typical Inches Min. Max. 0.0177 0.0217 0.0650 0.0768 0.0354 0.0591 0.0177 0.0236 0.2441 0.2677 0.2125 0.2283 DIM A B C D E F Millimeters Min. Max. 0.45 0.55 1.65 1.95 0.90 1.50 0.45 0.60 6.20 6.80 5.40 5.80 DIM G H I J K L Inches Min. Max. 0.0866 0.1102 *0.0906 0.0449 0.0346 0.2047 0.2165 0.0551 0.0630 Millimeters Min. Max. 2.20 2.80 *2.30 1.14 0.88 5.20 5.50 1.40 1.60 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: KFC; pure tin plated • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTC1510J3 CYStek Product Specification