CYSTEKEC BTA1952J3_09

Spec. No. : C601J3
Issued Date : 2004.05.17
Revised Date :2009.02.04
Page No. : 1/6
CYStech Electronics Corp.
Low Vcesat PNP Epitaxial Planar Transistor
BTA1952J3
BVCEO
IC
RCESAT
-100V
-5A
150mΩ
Features
• Low VCE(sat), VCE(sat)=-0.3 V (typical), at IC / IB = -2A / -0.2A
• Excellent DC current gain characteristics
• Wide SOA
• Complementary to BTC5103J3
• RoHS compliant package
Symbol
Outline
BTA1952J3
TO-252
B:Base
C:Collector
E:Emitter
B C E
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Note : *1. Single Pulse Pw=10ms
BTA1952J3
Symbol
Limits
Unit
VCBO
VCEO
VEBO
IC(DC)
IC(Pulse)
Pd(TA=25℃)
Pd(TC=25℃)
Tj
Tstg
-100
-80
-5
-5
-10
1
10
150
-55~+150
V
V
V
*1
A
W
°C
°C
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C601J3
Issued Date : 2004.05.17
Revised Date :2009.02.04
Page No. : 2/6
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE 1
*hFE 2
fT
Min.
-100
-80
-5
100
120
-
Typ.
-0.3
120
Max.
-10
-10
-1.0
-1.5
390
-
Unit
V
V
V
μA
μA
V
V
MHz
Test Conditions
IC=-50μA, IE=0
IC=-1mA, IB=0
IE=-50μA, IC=0
VCB=-100V, IE=0
VEB=-5V, IC=0
IC=-2A, IB=-0.2A
IC=-2A, IB=-0.2A
VCE=-3V, IC=-0.5A
VCE=-2V, IC=-1A
VCE=-5V, IC=-500mA, f=30MHz
*Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2%
Classification of hFE 2
Rank
Range
Q
120~270
R
180~390
Ordering Information
Device
BTA1952J3
BTA1952J3
Package
TO-252
(RoHS-compliant)
Shipping
Marking
2500 pcs / tape & reel
A1952
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C601J3
Issued Date : 2004.05.17
Revised Date :2009.02.04
Page No. : 3/6
Characteristic Curves
Current Gain vs Collector Current
Saturation Voltage vs Collector Current
1000
1000
Current Gain---HFE
Saturation Voltage---(mV)
VCE=4V
VCE(SAT)@IC=10IB
100
10
1
100
1
10
100
1000
Collector Current---IC(mA)
1
10000
10000
Power Derating Curve
On Voltage vs Collector Current
10000
1.2
Power Dissipation---PD(W)
VBE(on)@VCE=4V
On Voltage---(mV)
10
100
1000
Collector Current---IC(mA)
1000
1
0.8
0.6
0.4
0.2
0
100
0.1
1
10
100
1000
Collector Current---IC(mA)
10000
0
50
100
150
Ambient Temperature---TA(℃)
200
Power Derating Curve
Power Dissipation---PD(W)
12
10
8
6
4
2
0
0
BTA1952J3
50
100
150
Case Temperature---TC(℃)
200
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C601J3
Issued Date : 2004.05.17
Revised Date :2009.02.04
Page No. : 4/6
Reel Dimension
Carrier Tape Dimension
BTA1952J3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C601J3
Issued Date : 2004.05.17
Revised Date :2009.02.04
Page No. : 5/6
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
BTA1952J3
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C601J3
Issued Date : 2004.05.17
Revised Date :2009.02.04
Page No. : 6/6
TO-252 Dimension
C
A
Marking:
D
B
A1952
G
F
L
3
H
E
K
Style: Pin 1.Base 2.Collector 3.Emitter
2
I
1
J
3-Lead TO-252 Plastic Surface Mount Package
CYStek Package Code: J3
*: Typical
Inches
Min.
Max.
0.0177 0.0217
0.0650 0.0768
0.0354 0.0591
0.0177 0.0236
0.2441 0.2677
0.2125 0.2283
DIM
A
B
C
D
E
F
Millimeters
Min.
Max.
0.45
0.55
1.65
1.95
0.90
1.50
0.45
0.60
6.20
6.80
5.40
5.80
DIM
G
H
I
J
K
L
Inches
Min.
Max.
0.0866 0.1102
*0.0906
0.0449
0.0346
0.2047 0.2165
0.0551 0.0630
Millimeters
Min.
Max.
2.20
2.80
*2.30
1.14
0.88
5.20
5.50
1.40
1.60
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: KFC; pure tin plated
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTA1952J3
CYStek Product Specification