CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET Spec. No. : C725EA Issued Date : 2010.02.25 Revised Date : 2010.12.29 Page No. : 1/9 BVDSS : 700V @Tj=150℃ RDS(ON) : 0.85Ω MTN10N65EA ID : 10A Description The MTN10N65EA is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOT-82 package is universally preferred for all commercial-industrial applications Features • BVDSS=700V typically @ Tj=150℃ • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • RoHS compliant package Applications • Power Factor Correction • LCD TV Power • Full and Half Bridge Power Symbol Outline MTN10N65EA G：Gate D：Drain S：Source MTN10N65EA SOT-82 G D S Preliminary CYStek Product Specification Spec. No. : C725EA Issued Date : 2010.02.25 Revised Date : 2010.12.29 Page No. : 2/9 CYStech Electronics Corp. Absolute Maximum Ratings (TC=25°C) Parameter Symbol Limits Unit Drain-Source Voltage (Note 1) Gate-Source Voltage Continuous Drain Current Continuous Drain Current @TC=100°C Pulsed Drain Current @ VGS=10V (Note 2) Single Pulse Avalanche Energy @ L=4.3mH, ID=10 Amps, VDD=50V Repetitive Avalanche Energy Peak Diode Recovery dv/dt (Note 3) Maximum Temperature for Soldering @ Lead at 0.063 in(1.6mm) from case for 10 seconds Maximum Temperature for Soldering @ Package Body for 10 seconds Total Power Dissipation (TC=25℃) Linear Derating Factor Operating Junction and Storage Temperature VDS VGS ID ID IDM EAS EAR dv/dt 650 ±30 10* 6 40* 237 5 3.0 V V A A A V/ns TL 300 °C TPKG 260 °C Pd 50 0.4 -55~+150 W W/°C °C Tj, Tstg *Drain current limited by maximum junction temperature mJ Note : 1. TJ=+25℃ to +150℃. 2. Repetitive rating; pulse width limited by maximum junction temperature. 3. ISD≤10A, dI/dt≤100A/μs, VDD≤BVDSS, TJ=+150℃. Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max MTN10N65EA Symbol Rth,j-c Rth,j-a Preliminary Value 2.5 100 Unit °C/W °C/W CYStek Product Specification CYStech Electronics Corp. Spec. No. : C725EA Issued Date : 2010.02.25 Revised Date : 2010.12.29 Page No. : 3/9 Characteristics (Tj=25°C, unless otherwise specified) Symbol Min. Static BVDSS 650 BVDSS ∆BVDSS/∆Tj BVDS VGS(th) 2.0 *GFS IGSS IDSS IDSS *RDS(ON) Dynamic *Qg *Qgs *Qgd *td(ON) *tr *td(OFF) *tf Ciss Coss Crss Source-Drain Diode *VSD *IS *ISM *trr *Qrr - Typ. Max. Unit Test Conditions 700 0.631 700 6.8 0.75 4.0 ±100 25 250 0.85 V V V/°C V V S nA μA μA Ω VGS=0, ID=250μA VGS=0, ID=250μA, Tj=150℃ Reference to 25°C, ID=250μA VGS=0, ID=10A VDS = VGS, ID=250μA VDS =15V, ID=5A VGS=±30 VDS =650V, VGS =0 VDS =520V, VGS =0, Tj=125°C VGS =10V, ID=6A 39 9.5 17.6 19 16 49 16 1882 170 20 - nC ID=10A, VDD=300V, VGS=10V ns VDD=300V, ID=10A, VGS=10V, RG=9.1Ω pF VGS=0V, VDS=25V, f=1MHz 352 2.9 1.5 10 40 528 4.35 V IS=10A, VGS=0V A VD=VG=0, VS=1.3V ns μC VGS=0, IF=10A, dI/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Ordering Information Device MTN10N65EA MTN10N65EA Package SOT-82 (RoHS compliant) Shipping Marking 200 pcs/bag, 10 bags/box, 10 boxes / carton 10N65 Preliminary CYStek Product Specification CYStech Electronics Corp. Spec. No. : C725EA Issued Date : 2010.02.25 Revised Date : 2010.12.29 Page No. : 4/9 Characteristic Curves MTN10N65EA Preliminary CYStek Product Specification CYStech Electronics Corp. Spec. No. : C725EA Issued Date : 2010.02.25 Revised Date : 2010.12.29 Page No. : 5/9 Characteristic Curves(Cont.) MTN10N65EA Preliminary CYStek Product Specification CYStech Electronics Corp. Spec. No. : C725EA Issued Date : 2010.02.25 Revised Date : 2010.12.29 Page No. : 6/9 Characteristic Curves(Cont.) MTN10N65EA Preliminary CYStek Product Specification CYStech Electronics Corp. Spec. No. : C725EA Issued Date : 2010.02.25 Revised Date : 2010.12.29 Page No. : 7/9 Test Circuit and Waveforms MTN10N65EA Preliminary CYStek Product Specification CYStech Electronics Corp. Spec. No. : C725EA Issued Date : 2010.02.25 Revised Date : 2010.12.29 Page No. : 8/9 Test Circuit and Waveforms(Cont.) MTN10N65EA Preliminary CYStek Product Specification CYStech Electronics Corp. Spec. No. : C725EA Issued Date : 2010.02.25 Revised Date : 2010.12.29 Page No. : 9/9 SOT- 82 Dimension Marking: CYS Logo Device Name Date Code 3-Lead SOT-82 Plastic Package CYStek Package Code: EA Style: Pin 1.Gate 2.Drain 3.Source 4.Drain *Typical Inches Min. Max. 0.291 0.307 0.413 0.425 0.028 0.035 0.019 0.029 0.094 0.106 0.039 0.051 0.630 0.606 *0.086 DIM A B b b1 C c1 D e Millimeters Min. Max. 7.4 7.8 10.5 10.8 0.7 0.9 0.49 0.75 2.4 2.7 1.0 1.3 16.0 15.4 *2.2 DIM e3 F H H2 I O V Inches Min. Max. 0.183 0.163 *0.149 *0.100 *0.084 *0.05 *0.012 *10° Millimeters Min. Max. 4.65 4.15 *3.8 *2.54 *2.15 *1.27 *0.3 *10° Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTN10N65EA Preliminary CYStek Product Specification