TK12 TK12 Phase Control Thyristor Advance Information Replaces January 2000 version, DS4252-4.0 DS4252-5.0 July 2001 FEATURES KEY PARAMETERS ■ High Surge Capability VDRM 2000V IT(AV) 75A ITSM 1400A dVdt* 200V/µs dI/dt 500A/µs APPLICATIONS ■ High Power Drives ■ High Voltage Power Supplies ■ DC Motor Control *Higher dV/dt selections available ■ Welding ■ Battery Chargers VOLTAGE RATINGS Type Number TK12 20 M or K TK12 18 M or K TK12 16 M or K TK12 14 M or K Repetitive Peak Voltages VDRM VRRM V Conditions 2000 1800 1600 1400 Tvj = 0˚ to 125˚C, IDRM = IRRM = 100mA, VDRM, VRRM tp = 10ms, VDSM & VRSM = VDRM & VRRM + 100V Respectively Lower voltage grades available. ORDERING INFORMATION When ordering, select the required part number shown in the Voltage Ratings selection table, then:- Outline type code: TO94. See Package Details for further information. Fig. 1 Package outline Add K to type number for 1/2" 20 UNF thread, e.g. TK12 18K. or Add M to type number for M12 thread, e.g. TK12 14M. Note: Please use the complete part number when ordering and quote this number in any future correspondance relating to your order. 1/8 www.dynexsemi.com TK12 CURRENT RATINGS Tcase = 60˚C unless stated otherwise. Symbol Parameter Conditions Half wave resistive load Max. Units 104 A IT(AV) Mean on-state current IT(RMS) RMS value - 163 A Continuous (direct) on-state current - 139 A Conditions Max. Units 75 A IT Tcase = 80˚C unless stated otherwise. Symbol Parameter Half wave resistive load IT(AV) Mean on-state current IT(RMS) RMS value - 120 A Continuous (direct) on-state current - 100 A IT SURGE RATINGS Parameter Symbol ITSM I2t ITSM I2t Surge (non-repetitive) on-state current I2t for fusing Surge (non-repetitive) on-state current Conditions Max. Units 10ms half sine; Tcase = 125oC 1.12 kA VR = 50% VRRM - 1/4 sine 6.2 x 103 A2s 10ms half sine; Tcase = 125oC 1.4 kA VR = 0 9.8 x 103 A2s I2t for fusing THERMAL AND MECHANICAL DATA Symbol Conditions Parameter Min. Max. Units Rth(j-c) Thermal resistance - junction to case dc - 0.24 o Rth(c-h) Thermal resistance - case to heatsink Mounting torque 15.0Nm with mounting compound - 0.08 o On-state (conducting) - 125 o Reverse (blocking) - 125 o Storage temperature range –40 150 o Mounting torque 12.0 15.0 Tvj Tstg - C/W C/W C Virtual junction temperature C C Nm 2/8 www.dynexsemi.com TK12 DYNAMIC CHARACTERISTICS Symbol Parameter Conditions Min. Max. Units Maximum on-state voltage At 150A peak, Tcase = 25oC - 2.0 V Peak reverse and off-state current At VRRM/VDRM, Tcase = 125oC - 10 mA dV/dt Maximum linear rate of rise of off-state voltage To 60% VDRM Tj = 125oC, Gate open circuit - 200 V/µs - 500 A/µs Rate of rise of on-state current Gate source 20V, 20Ω tr ≤ 0.5µs, Tj = 125˚C Repetitive 50Hz dI/dt Non-repetitive - 800 A/µs VTM IRRM/IDRM Threshold voltage At Tvj = 125oC - 1.4 V rT On-state slope resistance At Tvj = 125oC - 4.0 mΩ tgd Delay time VD = 300V, IG = 1A, IT = 50A, dI/dt = 50A/µs, dIG/dt = 1A/µs, Tj = 25oC - 1.5 µs IL Latching current Tj = 25oC, VD = 12V - - mA IH Holding current Tj = 25oC, VD = 12V, ITM = 1A - 50 mA Typ. Max. Units VT(TO) GATE TRIGGER CHARACTERISTICS AND RATINGS Symbol Parameter Conditions VGT Gate trigger voltage VDRM = 12V, Tcase = 25oC, RL = 6Ω - 3.0 V IGT Gate trigger current VDRM = 12V, Tcase = 25oC, RL = 6Ω - 125 mA VGD Gate non-trigger voltage At VDRM Tcase = 125oC, RL = 12Ω - 0.2 V VFGM Peak forward gate voltage Anode positive with respect to cathode - 3.0 V VFGN Peak forward gate voltage Anode negative with respect to cathode - 0.25 V VRGM Peak reverse gate voltage - 5 V IFGM Peak forward gate current - 4 A PGM Peak gate power - 16 W PG(AV) Mean gate power - 3 W Anode positive with respect to cathode - 3/8 www.dynexsemi.com TK12 CURVES Instantaneous on-state current, IT - (A) 2000 SINUSOIDAL CURRENT WAVEFORM Measured under pulse conditions Tj = 125˚C 1500 1000 RECTANGULAR CURRENT WAVEFORM 500 0 0 4.0 8.0 Instantaneous on-state voltage VT - (V) 12.0 Fig.2 Maximum (limit) on-state characteristics Fig.3 Maximum on-state power dissipation for sinusoidal current waveform Fig.4 Maximum allowable case temperature for sinusoidal current waveform 4/8 www.dynexsemi.com TK12 Fig.5 Maximum on-state power dissipation for rectangular current waveform Fig.6 Maximum allowable case temperature for rectangular current waveform Fig.7 Gate trigger characteristics Fig.8 Transient thermal impedance - junction to case 5/8 www.dynexsemi.com TK12 Fig.9 Multiplying factor for non-repetive sub-cycle surge onstate current and I2t rating Fig.10 Multiplying factor for non-repetive surge on-state current 6/8 www.dynexsemi.com TK12 PACKAGE DETAILS For further package information, please contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Ø4 15 max Ø8.4 ± 0.3 8 min 210 ± 10 160 ± 10 30 max Hex. 27AF 8 min M = M12 K = 1/2" 20 UNF K = 20.6 ± 0.6 M = 18.0 ± 0.5 Nominal weight: 120g Mounting torque: 15Nm ±10% Gate lead colour: White Cathode lead colour: Red Package outine type code: TO94 7/8 www.dynexsemi.com TK12 POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). DEVICE CLAMPS Disc devices require the correct clamping force to ensure their safe operation. The PACS range includes a varied selection of pre-loaded clamps to suit all of our manufactured devices. Types available include cube clamps for single side cooling of ‘T’ 23mm and ‘E’ 30mm discs, and bar clamps right up to 83kN for our ‘Z’ 100mm thyristors and diodes. Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies. Please refer to our application note on device clamping, AN4839 HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer service office. http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. 99 Bank Street, Suite 410, Ottawa, Ontario, Canada, K1P 6B9 Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) CUSTOMER SERVICE CENTRES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2001 Publication No. DS4252-5 Issue No. 5.0 July 2001 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. 8/8 www.dynexsemi.com