VISHAY BAS83

BAS81...BAS83
Vishay Telefunken
Schottky Barrier Diodes
Features
D Integrated protection ring against static discharge
D
D
D
D
Low capacitance
Low leakage current
Low forward voltage drop
Very low switching time
Applications
94 9371
HF–Detector
Protection circuit
Diode for low currents with a low supply voltage
Small battery charger
Power supplies
DC / DC converter for notebooks
Absolute Maximum Ratings
Tj = 25_C
Parameter
Reverse voltage
g
Test Conditions
Peak forward surge current
Repetitive peak forward current
Forward current
Junction temperature
Storage temperature range
Type
BAS81
BAS82
BAS83
tp=1s
Symbol
VR
VR
VR
IFSM
IFRM
IF
Tj
Tstg
Value
40
50
60
500
150
30
125
–65...+150
Unit
V
V
V
mA
mA
mA
°C
°C
Maximum Thermal Resistance
Tj = 25_C
Parameter
Junction ambient
Test Conditions
on PC board 50mmx50mmx1.6mm
Symbol
RthJA
Value
320
Unit
K/W
Electrical Characteristics
Tj = 25_C
Parameter
Forward voltage
g
Reverse current
Diode capacitance
Document Number 85509
Rev. 3, 01-Apr-99
Test Conditions
IF=0.1mA
IF=1mA
IF=15mA
VR=VRmax
VR=1V, f=1MHz
Type
Symbol
VF
VF
VF
IR
CD
Min
Typ
Max
330
410
1
200
1.6
Unit
mV
mV
V
nA
pF
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BAS81...BAS83
Vishay Telefunken
Characteristics (Tj = 25_C unless otherwise specified)
PR – Reverse Power Dissipation ( mW )
14
1000
VR = 60 V
RthJA=
540K/W
10
IF – Forward Current ( A )
12
PR–Limit
@100%VR
8
6
PR–Limit
@80%VR
4
2
Tj = 150°C
10
Tj = 25°C
1
0.1
0.01
0
25
50
75
100
125
0
150
Tj – Junction Temperature ( °C )
15794
0.5
1.0
1.5
2.0
VF – Forward Voltage ( V )
15796
Figure 1. Max. Reverse Power Dissipation vs. Junction
Temperature
Figure 3. Forward Current vs. Forward Voltage
1000.0
2.0
VR = VRRM
f=1MHz
1.8
CD – Diode Capacitance ( pF )
I R – Reverse Current ( mA )
100
100.0
10.0
1.0
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.1
25
15795
50
75
100
125
Tj – Junction Temperature ( °C )
Figure 2. Reverse Current vs. Junction Temperature
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2 (4)
0
0.1
150
15797
1.0
10.0
100.0
VR – Reverse Voltage ( V )
Figure 4. Diode Capacitance vs. Reverse Voltage
Document Number 85509
Rev. 3, 01-April-99
BAS81...BAS83
Vishay Telefunken
Dimensions in mm
96 12070
Document Number 85509
Rev. 3, 01-Apr-99
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BAS81...BAS83
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known
as ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized
application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out
of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
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4 (4)
Document Number 85509
Rev. 3, 01-April-99