ELPIDA EBD13UB6ALS-75

PRELIMINARY DATA SHEET
128MB DDR SDRAM S.O. DIMM
EBD13UB6ALS (16M words × 64 bits, 2 Banks)
Description
Features
The EBD13UB6ALS is 16M words × 64 bits, 2 banks
Double Data Rate (DDR) SDRAM module, mounted 8
pieces of 128M bits DDR SDRAM (EDD1216ALTA)
sealed in TSOP package. Read and write operations
are performed at the cross points of the CLK and the
/CLK. This high-speed data transfer is realized by the
2 bits prefetch-pipelined architecture. Data strobe
(DQS) both for read and write are available for high
speed and reliable data bus design. By setting
extended mode register, the on-chip Delay Locked
Loop (DLL) can be set enable or disable. An outline of
the products is 200-pin socket type package (dual lead
out). Therefore, it makes high density mounting
possible without surface mount technology. It provides
common data inputs and outputs.
Decoupling
capacitors are mounted beside each TSOP on the
module board.
• 200-pin socket type package (dual lead out)
 Outline: 67.6mm (Length) × 31.75mm (Height) ×
3.80mm (Thickness)
 Lead pitch: 0.6mm
• 2.5V power supply
• SSTL-2 interface for all inputs and outputs
• Clock frequency: 133MHz/100MHz (max.)
• Data inputs and outputs are synchronized with DQS
• 4 banks can operate simultaneously and
independently (Component)
• Burst read/write operation
• Programmable burst length: 2, 4, 8
 Burst read stop capability
• Programmable burst sequence
 Sequential
 Interleave
• Start addressing capability
 Even and Odd
• Programmable /CAS latency (CL): 2, 2.5
• 4096 refresh cycles: 15.6µs (4096/64ms)
• 2 variations of refresh
 Auto refresh
 Self refresh
Document No. E0219E10 (Ver. 1.0)
Date Published October 2001 (K)
Printed in Japan
URL: http://www.elpida.com
C
Elpida Memory, Inc. 2001
Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.
EBD13UB6ALS
Ordering Information
Part number
Clock frequency
MHz (max.)
/CAS latency
Package
Contact pad
Mounted devices
EBD13UB6ALS-7A
EBD13UB6ALS-75
EBD13UB6ALS-1A
133
133
100
2.0
2.5
2.0
200-pin
S.O. DIMM
Gold
EDD1216ALTA
Pin Configurations
Front side
1 pin
39 pin 41 pin
199 pin
2 pin
40 pin 42 pin
200 pin
Back side
Pin No.
Pin name
Pin No.
Pin name
Pin No.
Pin name
Pin No.
Pin name
1
VREF
51
VSS
2
VREF
52
VSS
3
VSS
53
DQ19
4
VSS
54
DQ23
5
DQ0
55
DQ24
6
DQ4
56
DQ28
7
DQ1
57
VDD
8
DQ5
58
VDD
9
VDD
59
DQ25
10
VDD
60
DQ29
11
DQS0
61
DQS3
12
DM0
62
DM3
13
DQ2
63
VSS
14
DQ6
64
VSS
15
VSS
65
DQ26
16
VSS
66
DQ30
17
DQ3
67
DQ27
18
DQ7
68
DQ31
19
DQ8
69
VDD
20
DQ12
70
VDD
21
VDD
71
NC
22
VDD
72
NC
23
DQ9
73
NC
24
DQ13
74
NC
25
DQS1
75
VSS
26
DM1
76
VSS
27
VSS
77
NC
28
VSS
78
NC
29
DQ10
79
NC
30
DQ14
80
NC
31
DQ11
81
VDD
32
DQ15
82
VDD
33
VDD
83
NC
34
VDD
84
NC
35
CLK0
85
NC
36
VDD
86
NC
37
/CLK0
87
VSS
38
VSS
88
VSS
39
VSS
89
CLK2
40
VSS
90
VSS
41
DQ16
91
/CLK2
42
DQ20
92
VDD
43
DQ17
93
VDD
44
DQ21
94
VDD
45
VDD
95
NC
46
VDD
96
CKE0
47
DQS2
97
NC
48
DM2
98
NC
49
DQ18
99
NC
50
DQ22
100
A11
Preliminary Data Sheet E0219E10 (Ver. 1.0)
2
EBD13UB6ALS
Pin No.
Pin name
Pin No.
Pin name
Pin No.
Pin name
Pin No.
Pin name
101
A9
151
DQ42
102
A8
152
DQ46
103
VSS
153
DQ43
104
VSS
154
DQ47
105
A7
155
VDD
106
A6
156
VDD
107
A5
157
VDD
108
A4
158
/CLK1
109
A3
159
VSS
110
A2
160
CLK1
111
A1
161
VSS
112
A0
162
VSS
113
VDD
163
DQ48
114
VDD
164
DQ52
115
A10/AP
165
DQ49
116
BA1
166
DQ53
117
BA0
167
VDD
118
/RAS
168
VDD
119
/WE
169
DQS6
120
/CAS
170
DM6
121
/CS0
171
DQ50
122
/CS1
172
DQ54
123
NC
173
VSS
124
NC
174
VSS
125
VSS
175
DQ51
126
VSS
176
DQ55
127
DQ32
177
DQ56
128
DQ36
178
DQ60
129
DQ33
179
VDD
130
DQ37
180
VDD
131
VDD
181
DQ57
132
VDD
182
DQ61
133
DQS4
183
DQS7
134
DM4
184
DM7
135
DQ34
185
VSS
136
DQ38
186
VSS
137
VSS
187
DQ58
138
VSS
188
DQ62
139
DQ35
189
DQ59
140
DQ39
190
DQ63
141
DQ40
191
VDD
142
DQ44
192
VDD
143
VDD
193
SDA
144
VDD
194
SA0
145
DQ41
195
SCL
146
DQ45
196
SA1
147
DQS5
197
VDDSPD
148
DM5
198
SA2
149
VSS
199
VDDID
150
VSS
200
NC
Preliminary Data Sheet E0219E10 (Ver. 1.0)
3
EBD13UB6ALS
Pin Description
Pin name
Function
A0 to A11
Address input
Row address
Column address
BA0, BA1
Bank select address
A0 to A11
A0 to A8
DQ0 to DQ63
Data input/output
/RAS
Row address strobe command
/CAS
Column address strobe command
/WE
Write enable
/CS0, /CS1
Chip select
CKE0, CKE1
Clock enable
CLK0 to CLK2
Clock input
/CLK0 to /CLK2
Differential clock input
DQS0 to DQS7
Input and output data strobe
DM0 to DM7
Input mask
SCL
Clock input for serial PD
SDA
Data input/output for serial PD
SA0 to SA2
Serial address input
VDD
Power for internal circuit
VDDSPD
Power for serial EEPROM
VREF
Input reference voltage
VSS
Ground
VDDID
VDD indentication flag
NC
No connection
Preliminary Data Sheet E0219E10 (Ver. 1.0)
4
EBD13UB6ALS
Serial PD Matrix
Byte No.
0
1
Function described
Number of bytes utilized by module
manufacturer
Total number of bytes in serial PD
device
Bit7
Bit6
Bit5 Bit4
Bit3
Bit2 Bit1
Bit0 Hex value
Comments
1
0
0
0
0
0
0
0
80H
128 bytes
0
0
0
0
1
0
0
0
08H
256 bytes
0
0
0
0
0
1
1
1
07H
DDR SDRAM
2
Memory type
3
Number of row address
0
0
0
0
1
1
0
0
0CH
12
4
Number of column address
0
0
0
0
1
0
0
1
09H
9
5
Number of DIMM banks
0
0
0
0
0
0
1
0
02H
2
6
Module data width
0
1
0
0
0
0
0
0
40H
64
7
Module data width continuation
0
0
0
0
0
0
0
0
00H
0
8
Voltage interface level of this assembly 0
0
0
0
0
1
0
0
04H
SSTL2
9
DDR SDRAM cycle time, CL = 2.5
-7A
0
1
1
1
0
1
0
1
75H
7.5ns
-75
0
1
1
1
0
1
0
1
75H
7.5ns
-1A
1
0
1
0
0
0
0
0
A0H
10ns
0
1
1
1
0
1
0
1
75H
0.75ns
-75
0
1
1
1
0
1
0
1
75H
0.75ns
-1A
1
0
0
0
0
0
0
0
80H
0.8ns
DIMM configuration type
0
0
0
0
0
0
0
0
00H
None.
12
Refresh rate/type
1
0
0
0
0
0
0
0
80H
Norm
13
Primary SDRAM width
0
0
0
1
0
0
0
0
10H
× 16
Error checking SDRAM width
0
0
0
0
0
0
0
0
00H
None.
0
0
0
0
0
0
0
1
01H
1 CLK
0
0
0
0
1
1
1
0
0EH
2,4,8
0
0
0
0
0
1
0
0
04H
4
0
0
0
0
1
1
0
0
0CH
2, 2.5
0
0
0
0
0
0
0
1
01H
0
0
0
0
0
0
0
1
0
02H
1
SDRAM module attributes
0
0
1
0
0
0
0
0
20H
Differential
Clock
22
SDRAM device attributes: General
0
0
0
0
0
0
0
0
00H
VDD ± 0.2V
23
Minimum clock cycle time at CL = 2
-7A
0
1
1
1
0
1
0
1
75H
7.5ns
-75
1
0
1
0
0
0
0
0
A0H
10ns
-1A
1
0
1
0
0
0
0
0
A0H
10ns
Maximum data access time (tAC) from
1
clock at CL = 2
-7A
0
0
0
0
0
0
0
80H
0.80ns
10
11
14
15
16
17
18
19
20
21
24
SDRAM access from clock (tAC)
-7A
SDRAM device attributes:
Minimum clock delay back-to-back
column access
SDRAM device attributes:
Burst length supported
SDRAM device attributes: Number of
banks on SDRAM device
SDRAM device attributes:
/CAS latency
SDRAM device attributes:
/CS latency
SDRAM device attributes:
/WE latency
-75
0
1
1
1
0
1
0
1
75H
0.75ns
-1A
1
0
0
0
0
0
0
0
80H
0.8ns
0
0
0
0
0
0
0
0
00H
25 to 26
Preliminary Data Sheet E0219E10 (Ver. 1.0)
5
EBD13UB6ALS
Byte No.
Function described
Bit7
Bit6
Bit5 Bit4
Bit3
Bit2 Bit1
Bit0 Hex value
Comments
27
Minimum row precharge time (tRP)
-7A
0
1
0
1
0
0
0
0
50H
20ns
-75
0
1
0
1
0
0
0
0
50H
20ns
-1A
0
1
0
1
0
0
0
0
50H
20ns
0
0
1
1
1
1
0
0
3CH
15ns
-75
0
0
1
1
1
1
0
0
3CH
15ns
-1A
0
0
1
1
1
1
0
0
3CH
15ns
0
1
0
1
0
0
0
0
50H
20ns
-75
0
1
0
1
0
0
0
0
50H
20ns
-1A
0
1
0
1
0
0
0
0
50H
20ns
0
0
1
0
1
1
0
1
2DH
45ns
-75
0
0
1
0
1
1
0
1
2DH
45ns
-1A
0
0
1
1
0
0
1
0
32H
50ns
28
29
30
Minimum row active to row active
delay (tRRD)
-7A
Minimum /RAS to /CAS delay (tRCD)
-7A
Minimum active to precharge time
(tRAS)
-7A
31
Module bank density
0
0
0
1
0
0
0
0
10H
64M bytes
32
Address and command setup time
before clock (tIS)
-7A
1
0
0
1
0
0
0
0
90H
0.9ns
-75
1
0
0
1
0
0
0
0
90H
0.9ns
-1A
1
0
1
1
0
0
0
0
B0H
1.1ns
Address and command hold time after
1
clock (tIH)
-7A
0
0
1
0
0
0
0
90H
0.9ns
33
34
35
-75
1
0
0
1
0
0
0
0
90H
0.9ns
-1A
1
0
1
1
0
0
0
0
B0H
1.1ns
0
1
0
1
0
0
0
0
50H
0.5ns
-75
0
1
0
1
0
0
0
0
50H
0.5ns
-1A
0
1
1
0
0
0
0
0
60H
0.6ns
0
1
0
1
0
0
0
0
50H
0.5ns
-75
0
1
0
1
0
0
0
0
50H
0.5ns
-1A
0
1
1
0
0
0
0
0
60H
0.6ns
Data input setup time before clock
(tDS)
-7A
Data input hold time after clock (tDH)
-7A
36 to 61
Superset information
0
0
0
0
0
0
0
0
00H
62
SPD Revision
0
0
0
0
0
0
0
0
00H
63
Checksum for bytes 0 to 62
-7A
0
1
1
1
0
1
0
0
74H
-75
1
0
0
1
0
1
0
0
94H
-1A
0
0
1
1
1
0
1
0
3AH
Manufacturer’s JEDEC ID code
1
1
1
1
1
1
1
0
FEH
65 to 71
Manufacturer’s JEDEC ID code
0
0
0
0
0
0
0
0
00H
72
Manufacturing location
73 to 90
Manufacturer’s part number
91 to 92
Revision code
93 to 94
Manufacturing date
64
Preliminary Data Sheet E0219E10 (Ver. 1.0)
6
Elpida Memory
EBD13UB6ALS
Byte No.
Function described
Bit7
95 to 98
Module serial number
99 to 127
Manufacture specific data
Bit6
Bit5 Bit4
Bit3
Bit2 Bit1
Bit0 Hex value
Comments
Block Diagram
/CS1
/CS0
RS
DQS0
LDQS
/CS
LDQS
RS
/CS
DQS4
LDM
DM0
8
LDM
8
I/O0 to I/O7
RS
DQS1
RS
DM1
8
DM4
RS
DQ0 to DQ7
UDQS
I/O0 to I/O7
D0
UDM
UDQS
LDQS
D4
DQS5
UDM
DM5
RS
DQS3
RS
DM3
8
/CS
LDQS
I/O0 to I/O7
D2
D6
UDQS
UDM
UDM
I/O8 to I/O15
I/O8 to I/O15
RS
/CS
DQS6
/CS
LDQS
LDQS
/CS
RS
LDM
LDM
I/O0 to I/O7
I/O0 to I/O7
DM6
8
UDQS
D1
UDQS
LDM
LDM
I/O0 to I/O7
I/O0 to I/O7
RS
DQ48 to DQ55
RS
D5
DQS7
D3
UDQS
UDQS
D7
RS
UDM
UDM
DM7
RS
DQ24 to DQ31
I/O0 to I/O7
RS
DQ40 to DQ47
I/O8 to I/O15
RS
DQ16 to DQ23
LDM
UDQS
RS
8
LDM
RS
8
RS
DM2
/CS
RS
I/O8 to I/O15
DQS2
LDQS
RS
DQ32 to DQ39
RS
DQ8 to DQ15
/CS
LDQS
RS
RS
8
I/O8 to I/O15
DQ56 to DQ63
I/O8 to I/O15
UDM
UDM
I/O8 to I/O15
I/O8 to I/O15
RS
* D0 to D7 : EDD1216ALTA
U0 : 2k bits EEPROM
Rs : 22Ω
Serial PD
BA0 to BA1
SDRAMs (D0 to D7)
A0 to A11
SDRAMs (D0 to D7)
SCL
SCL
/RAS
SDRAMs (D0 to D7)
SA0
A0
/CAS
SDRAMs (D0 to D7)
SA1
A1
/WE
SDRAMs (D0 to D7)
CKE0
SA2
SDRAMs (D0 to D3)
A2
CKE1
SDA
SDA
U0
SDRAMs (D4 to D7)
VDDSPD
SPD
VREF
SDRAMs (D0 to D7)
VDD
SDRAMs (D0 to D7), VDD and VDDQ
VSS
SDRAMs (D0 to D7), SPD
CLK0
/CLK0
SDRAMs (D0, D1, D4, D5)
CLK1
/CLK1
SDRAMs (D2, D3, D6, D7)
CLK2
10 pF
/CLK2
Notes :
VDDID
Open
1. DQ wiring may differ from that described
in this drawing; however DQ/DM/DQS
relationships are maintained as shown.
VDDID strap connections:
(for memory device VDD, VDDQ)
Strap out (open): VDD = VDDQ
Strap in (closed): VDD ≠ VDDQ
2. The SDA pull-up registor is reguired due to
the open-drain/open-collector output.
3. The SCL pull-up registor is recommended,
because of the normal SCL lime inactive
"high" state.
Preliminary Data Sheet E0219E10 (Ver. 1.0)
7
EBD13UB6ALS
Logical Clock Net Structure
4DRAM loads
DRAM1
DRAM2
120Ω
DIMM
connector
DRAM3
DRAM4
Pin Functions (1)
CLK, /CLK (input pin): The CLK and the /CLK are the master clock inputs. All inputs except DMs, DQSs and DQs
are referred to the cross point of the CLK rising edge and the VREF level. When a read operation, DQSs and DQs
are referred to the cross point of the CLK and the /CLK. When a write operation, DMs and DQs are referred to the
cross point of the DQS and the VREF level. DQSs for write operation are referred to the cross point of the CLK and
the /CLK.
/CS (input pin): When /CS is Low, commands and data can be input. When /CS is High, all inputs are ignored.
However, internal operations (bank active, burst operations, etc.) are held.
/RAS, /CAS, and /WE (input pins): These pins define operating commands (read, write, etc.) depending on the
combinations of their voltage levels. See "Command operation".
A0 to A11 (input pins): Row address (AX0 to AX11) is determined by the A0 to the A11 level at the cross point of
the CLK rising edge and the VREF level in a bank active command cycle. Column address (AY0 to AY8) is loaded
via the A0 to the A8 at the cross point of the CLK rising edge and the VREF level in a read or a write command
cycle. This column address becomes the starting address of a burst operation.
A10 (AP) (input pin): A10 defines the precharge mode when a precharge command, a read command or a write
command is issued. If A10 = High when a precharge command is issued, all banks are precharged. If A10 = Low
when a precharge command is issued, only the bank that is selected by BA1, BA0 is precharged. If A10 = High
when read or write command, auto-precharge function is enabled. While A10 = Low, auto-precharge function is
disabled.
BA0, BA1 (input pin): BA0/BA1 are bank select signals. The memory array is divided into bank 0, bank 1, bank 2
and bank 3. If BA1 = Low and BA0 = Low, bank 0 is selected. If BA1 = High and BA0 = Low, bank 1 is selected. If
BA1 = Low and BA0 = High, bank 2 is selected. If BA1 = High and BA0 = High, bank 3 is selected.
CKE (input pin): CKE controls power down and self-refresh. The power down and the self-refresh commands are
entered when the CKE is driven Low and exited when it resumes to High.
The CKE level must be kept for 1 CLK cycle (= LCKEPW) at least, that is, if CKE changes at the cross point of the
CLK rising edge and the VREF level with proper setup time tIS, at the next CLK rising edge CKE level must be kept
with proper hold time tIH.
Preliminary Data Sheet E0219E10 (Ver. 1.0)
8
EBD13UB6ALS
Pin Functions (2)
DQ (input and output pins): Data are input to and output from these pins.
DQS (input and output pin): DQS provide the read data strobes (as output) and the write data strobes (as input).
DM (input pins): DM is the reference signal of the data input mask function. DMs are sampled at the cross point of
DQS and VREF
VDD (power supply pins): 2.5V is applied.
VDDSPD (power supply pin): 2.5V is applied (For serial EEPROM).
VSS (power supply pin): Ground is connected.
Detailed Operation Part, AC Characteristics and Timing Waveforms
Refer to the EDD1204ALTA, EDD1208ALTA, EDD1216ALTA Series datasheet (E0136E).
Preliminary Data Sheet E0219E10 (Ver. 1.0)
9
EBD13UB6ALS
Electrical Specifications
• All voltages are referenced to VSS (GND).
• After power up, wait more than 1ms and then, execute power on sequence and CBR (Auto) refresh before proper
device operation is achieved.
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Voltage on any pin relative to VSS
VT
–0.5 to +3.6
V
Supply voltage relative to VSS
VDD
–0.5 to +3.6
V
Short circuit output current
IO
50
mA
Power dissipation
PD
8
W
Operating temperature
TA
0 to +70
°C
Storage temperature
Tstg
–55 to +125
°C
Caution
Note
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
DC Operating Conditions (TA = 0 to +70°C)
Parameter
Symbol
Supply voltage
VDD
2.3
2.5
VSS
0
0
Input reference voltage
VREF
0.49 × VDD
—
0.51 × VDD
V
Termination voltage
VTT
VREF – 0.04
VREF
VREF + 0.04
V
1
DC Input high voltage
VIH
VREF + 0.18
—
VDD + 0.3
V
1, 2
DC Input low voltage
VIL
–0.3
—
VREF – 0.18
V
1, 3
DC Input signal voltage
VIN (dc)
–0.3
—
VDD+ 0.3
V
4
DC differential input voltage
VSWING (dc) 0.36
—
VDD + 0.6
V
5
Notes: 1.
2.
3.
4.
5.
min.
Typ
max.
Unit
Notes
2.7
V
1
0
V
All parameters are referred to VSS, when measured.
VIH is allowed to exceed VDD up to 4.6V for the period shorter than or equal to 5ns.
VIL is allowed to outreach below VSS down to –1.0V for the period shorter than or equal to 5ns.
VIN (dc) specifies the allowable dc execution of each differential input.
VSWING (dc) specifies the input differential voltage required for switching.
Preliminary Data Sheet E0219E10 (Ver. 1.0)
10
1
EBD13UB6ALS
DC Characteristics 1 (TA = 0 to +70°C, VDD = 2.5V ± 0.2V, VSS = 0V)
Parameter
Symbol
Operating current (ACTV-PRE)
ICC0
Operating current (ACTV-READICC1
PRE)
Idle power down standby current ICC2P
Idle standby current
ICC2N
Active power down standby
current
ICC3P
Active standby current
ICC3N
Operating current
(Burst read operation)
ICC4R
Operating current
(Burst write operation)
ICC4W
Auto refresh current
ICC5
Self refresh current
ICC6
Notes. 1.
2.
3.
4.
5.
6.
7.
Grade
-7A
-75
-1A
-7A
-75
-1A
-7A
-75
-1A
-7A
-75
-1A
-7A
-75
-1A
-7A
-75
-1A
-7A
-75
-1A
-7A
-75
-1A
-7A
-75
-1A
-7A
-75
-1A
max.
Unit
Test condition
Notes
TBD
mA
CKE ≥ VIH,
tRC = tRC (min.)
1, 2, 5
TBD
mA
CKE ≥ VIH, BL = 2,
CL = 3.5,
tRC = tRC (min.)
1, 2, 5
TBD
mA
CKE ≤ VIL
4
TBD
mA
CKE ≥ VIH, /CS ≥ VIH
4
TBD
mA
CKE ≤ VIL
3
TBD
mA
CKE ≥ VIH, /CS ≥ VIH
tRAS = tRAS (max.)
3
TBD
mA
CKE ≥ VIH, BL = 2,
CL = 3.5
1, 2, 5, 6
TBD
mA
CKE ≥ VIH, BL = 2,
CL = 3.5
1, 2, 5, 6
TBD
mA
tRFC = tRFC (min.)
Input ≤ VIL or ≥ VIH
TBD
mA
Input ≥ VDD – 0.2V
Input ≤ 0.2V.
These ICC data are measured under condition that DQ pins are not connected.
One bank operation.
One bank active.
All banks idle.
Command/Address transition once per one cycle.
Data/Data mask transition twice per one cycle.
The ICC data on this table are measured with regard to tCK = tCK (min.) in general.
DC Characteristics 2 (TA = 0 to +70°C, VDD = 2.5V ± 0.2V, VSS = 0V)
Parameter
Symbol
min.
max.
Unit
Test condition
Input leakage current
ILI
–16
16
µA
VDD ≥ VIN ≥ VSS
Output leakage current
ILO
–10
10
µA
VDD ≥ VOUT ≥ VSS
Output high current
IOH
–15.2
—
mA
VOUT = 1.95V
Output low current
IOL
15.2
—
mA
VOUT = 0.35V
Preliminary Data Sheet E0219E10 (Ver. 1.0)
11
Notes
EBD13UB6ALS
Pin Capacitance (TA = 25°C, VDD = 2.5V ± 0.2V)
Parameter
Symbol
Pins
Input capacitance
CI1
Address, /RAS, /CAS, /WE,
TBD
/CS, CKE
max.
Unit
pF
Input capacitance
CI2
CLK, /CLK
TBD
pF
Data and DQS input/output
capacitance
CO
DQ, DQS
TBD
pF
Notes
AC Characteristics (TA = 0 to +70°C, VDD = 2.5V ± 0.2V, VSS = 0V)
Synchronous Characteristics
-7A
Parameter
Clock cycle time
CL = 2.5
-75
-1A
Symbol
min.
max.
min.
max.
min.
max.
Unit
tCK
7.5
12
7.5
12
10
12
ns
7.5
12
10
12
10
12
ns
CL = 2
CLK high-level width
tCH
0.45
0.55
0.45
0.55
0.45
0.55
tCK
CLK low-level width
tCL
0.45
0.55
0.45
0.55
0.45
0.55
tCK
DQ output access time from CLK, /CLK
tAC
–0.75
0.75
–0.75
0.75
–0.8
0.8
ns
DQS output access time from CLK, /CLK
tDQSCK –0.75
0.75
–0.75
0.75
–0.8
0.8
ns
—
0.5
—
0.5
—
0.6
ns
DQS-DQ skew (for DQS and all DQ signals) tDQSQA —
0.5
—
0.5
—
0.6
ns
Data out low-impedance time from CLK, /CLKtLZ
–0.75
0.75
–0.75
0.75
–0.8
0.8
ns
Data out high-impedance time from CLK,
/CLK
tHZ
–0.75
0.75
–0.75
0.75
–0.8
0.8
ns
Half clock period
tHP
tCH, tCL
—
tCH, tCL
—
tCH, tCL —
Read preamble
tRPRE
0.9
1.1
0.9
1.1
0.9
1.1
tCK
Read postamble
tRPST
0.4
0.6
0.4
0.6
0.4
0.6
tCK
DQS-DQ skew (for DQS and associated DQ
tDQSQ
signals)
ns
DQ/DQS output hold time from DQS
tQH
tHP – 0.75 —
tHP – 0.75 —
tHP – 1 —
ns
DQ and DM input setup time
tDS
0.5
—
0.5
—
0.6
—
ns
DQ and DM input hold time
tDH
0.5
—
0.5
—
0.6
—
ns
1.75
—
1.75
—
2
—
ns
DQ and DM input pulse width (for each input) tDIPW
Write preamble setup time
tWPRES 0
—
0
—
0
—
ns
Write preamble
tWPRE
0.25
—
0.25
—
0.25
—
tCK
Write postamble
tWPST
0.4
0.6
0.4
0.6
0.4
0.6
tCK
Write command to first DQS latching
transition
tDQSS
0.75
1.25
0.75
1.25
0.75
1.25
tCK
DQS input high pulse width
tDQSH
0.35
—
0.35
—
0.35
—
tCK
DQS input low pulse width
tDQSL
0.35
—
0.35
—
0.35
—
tCK
DQS falling edge to CLK setup time
tDSS
0.2
—
0.2
—
0.2
—
tCK
DQS falling edge hold time from CLK
tDSH
0.2
—
0.2
—
0.2
—
tCK
Address and control input setup time
tIS
0.9
—
0.9
—
1.1
—
ns
Address and control input hold time
tIH
0.9
—
0.9
—
1.1
—
ns
Address and control input pulse width
tIPW
2.2
—
2.2
—
2.5
—
ns
Internal write to read command delay
tWTR
1
—
1
—
1
—
tCK
Preliminary Data Sheet E0219E10 (Ver. 1.0)
12
Note
EBD13UB6ALS
Synchronous Characteristics Example
tCK
7.5 ns
10 ns
Symbol
min.
max.
min.
max.
Unit
tCH
3.4
4.1
4.5
5.5
ns
tCL
3.4
4.1
4.5
5.5
ns
tRPRE
6.75
8.25
9
11
ns
tRPST
3
4.5
4
6
ns
tWPRE
0.25
—
2.5
—
ns
tWPST
3
4.5
4
6
ns
tDQSS
5.6
9.4
7.5
12.5
ns
tDQSH
2.63
—
3.5
—
ns
tDQSL
2.63
—
3.5
—
ns
tDSS
1.5
—
2
—
ns
tDSH
1.5
—
2
—
ns
tWTR
7.5
—
10
—
ns
Asynchronous Characteristics
-7A
Parameter
-75
-1A
Symbol
min.
max.
min.
max.
min.
max.
Unit
tRC
65
—
65
—
70
—
ns
tRFC
75
—
75
—
80
—
ns
ACT to PRE command period
tRAS
45
120,000
45
120,000
50
120,000
ns
PRE to ACT command period
tRP
20
—
20
—
20
—
ns
ACT to READ/WRITE delay
tRCD
20
—
20
—
20
—
ns
ACT(one) to ACT(another) command
period
tRRD
15
—
15
—
15
—
ns
Write recovery time
tWR
2
—
2
—
2
—
CLK
Auto precharge write recovery time
+ precharge time
tDAL
TBD
—
TBD
—
TBD
—
ns
Mode register set command cycle time
tMRD
15
—
15
—
15
—
ns
Exit self refresh to command
tXSNR
75
—
75
—
80
—
ns
Average periodic Refresh interval
tREF1
—
15.6
—
15.6
—
15.6
µs
ACT to REF/ACT command period
(operation)
REF to REF/ACT command period
(refresh)
Preliminary Data Sheet E0219E10 (Ver. 1.0)
13
EBD13UB6ALS
Physical Outline
Unit: mm
63.60
11.55
18.45
3.80 max.
(DATUM -A-)
4x Full R
4.00
199
1
6.00
20.0
31.75
Component area
(Front)
11.40 ± 0.05
2.15
A
47.40 ± 0.05
B
2.45
4.20 ± 0.05
1.00 ± 0.10
67.60 ± 0.15
4.20 ± 0.05
1.50
11.40 ± 0.05
2.45
2.15
47.40 ± 0.05
2
200
R0.50 ± 0.20
R0.50 ± 0.20
2x φ 1.80
4.00 ± 0.10
Component area
(Back)
(DATUM -A-)
2.00 min.
Detail A
Detail B
(DATUM -A-)
4.00 ± 0.10
2.55 min.
0.25 max.
FULL R
0.60
0.45 ± 0.05
1.80
1.00 ± 0.10
Preliminary Data Sheet E0219E10 (Ver. 1.0)
14
EBD13UB6ALS
CAUTION FOR HANDLING MEMORY MODULES
When handling or inserting memory modules, be sure not to touch any components on the modules, such as
the memory IC, chip capacitors and chip resistors. It is necessary to avoid undue mechanical stress on these
components to prevent damaging them.
When re-packing memory modules, be sure the modules are NOT touching each other. Modules in contact
with other modules may cause excessive mechanical stress, which may damage the modules.
MDE0107
NOTES FOR CMOS DEVICES
1
PRECAUTION AGAINST ESD FOR MOS DEVICES
Exposing the MOS devices to a strong electric field can cause destruction of the gate
oxide and ultimately degrade the MOS devices operation. Steps must be taken to stop
generation of static electricity as much as possible, and quickly dissipate it, when once
it has occurred. Environmental control must be adequate. When it is dry, humidifier
should be used. It is recommended to avoid using insulators that easily build static
electricity. MOS devices must be stored and transported in an anti-static container,
static shielding bag or conductive material. All test and measurement tools including
work bench and floor should be grounded. The operator should be grounded using
wrist strap. MOS devices must not be touched with bare hands. Similar precautions
need to be taken for PW boards with semiconductor MOS devices on it.
2
HANDLING OF UNUSED INPUT PINS FOR CMOS DEVICES
No connection for CMOS devices input pins can be a cause of malfunction. If no
connection is provided to the input pins, it is possible that an internal input level may be
generated due to noise, etc., hence causing malfunction. CMOS devices behave
differently than Bipolar or NMOS devices. Input levels of CMOS devices must be fixed
high or low by using a pull-up or pull-down circuitry. Each unused pin should be connected
to VDD or GND with a resistor, if it is considered to have a possibility of being an output
pin. The unused pins must be handled in accordance with the related specifications.
3
STATUS BEFORE INITIALIZATION OF MOS DEVICES
Power-on does not necessarily define initial status of MOS devices. Production process
of MOS does not define the initial operation status of the device. Immediately after the
power source is turned ON, the MOS devices with reset function have not yet been
initialized. Hence, power-on does not guarantee output pin levels, I/O settings or
contents of registers. MOS devices are not initialized until the reset signal is received.
Reset operation must be executed immediately after power-on for MOS devices having
reset function.
CME0107
Preliminary Data Sheet E0219E10 (Ver. 1.0)
15
EBD13UB6ALS
The information in this document is subject to change without notice. Before using this document, confirm that this is the latest version.
No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of Elpida Memory, Inc.
Elpida Memory, Inc. does not assume any liability for infringement of any intellectual property rights
(including but not limited to patents, copyrights, and circuit layout licenses) of Elpida Memory, Inc. or
third parties by or arising from the use of the products or information listed in this document. No license,
express, implied or otherwise, is granted under any patents, copyrights or other intellectual property
rights of Elpida Memory, Inc. or others.
Descriptions of circuits, software and other related information in this document are provided for
illustrative purposes in semiconductor product operation and application examples. The incorporation of
these circuits, software and information in the design of the customer's equipment shall be done under
the full responsibility of the customer. Elpida Memory, Inc. assumes no responsibility for any losses
incurred by customers or third parties arising from the use of these circuits, software and information.
[Product applications]
Elpida Memory, Inc. makes every attempt to ensure that its products are of high quality and reliability.
However, users are instructed to contact Elpida Memory's sales office before using the product in
aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment,
medical equipment for life support, or other such application in which especially high quality and
reliability is demanded or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury.
[Product usage]
Design your application so that the product is used within the ranges and conditions guaranteed by
Elpida Memory, Inc., including the maximum ratings, operating supply voltage range, heat radiation
characteristics, installation conditions and other related characteristics. Elpida Memory, Inc. bears no
responsibility for failure or damage when the product is used beyond the guaranteed ranges and
conditions. Even within the guaranteed ranges and conditions, consider normally foreseeable failure
rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so
that the equipment incorporating Elpida Memory, Inc. products does not cause bodily injury, fire or other
consequential damage due to the operation of the Elpida Memory, Inc. product.
[Usage environment]
This product is not designed to be resistant to electromagnetic waves or radiation. This product must be
used in a non-condensing environment.
If you export the products or technology described in this document that are controlled by the Foreign
Exchange and Foreign Trade Law of Japan, you must follow the necessary procedures in accordance
with the relevant laws and regulations of Japan. Also, if you export products/technology controlled by
U.S. export control regulations, or another country's export control laws or regulations, you must follow
the necessary procedures in accordance with such laws or regulations.
If these products/technology are sold, leased, or transferred to a third party, or a third party is granted
license to use these products, that third party must be made aware that they are responsible for
compliance with the relevant laws and regulations.
M01E0107
Preliminary Data Sheet E0219E10 (Ver. 1.0)
16