DATA SHEET 256MB Unbuffered SDRAM DIMM EBS25EC8APFA (32M words × 72 bits, 1 bank) Description Features The EBS25EC8APFA is 32M words × 72 bits, 1 bank Synchronous Dynamic RAM Unbuffered Module, mounted 9 pieces of 256M bits SDRAM sealed in TSOP package. This module provides high density and large quantities of memory in a small space without utilizing the surface mounting technology. Decoupling capacitors are mounted on power supply line for noise reduction. • Fully compatible with 8 bytes DIMM: JEDEC standard outline • 168-pin socket type dual in line memory module (DIMM) PCB height: 34.93mm (1.38inch ) Lead pitch: 1.27mm • 3.3V power supply • Clock frequency: 133MHz (max.) • LVTTL interface • Data bus width: × 72 ECC • Single pulsed /RAS • 4 Banks can operates simultaneously and independently • Burst read/write operation and burst read/single write operation capability • Programmable burst length (BL): 1, 2, 4, 8 • 2 variations of burst sequence Sequential Interleave • Programmable /CAS latency (CL): 2, 3 • Byte control by DQMB • Refresh cycles: 8192 refresh cycles/64ms • 2 variations of refresh Auto refresh Self refresh Document No. E0209E20 (Ver. 2.0) Date Published June 2002 (K) Japan URL: http://www.elpida.com Ellpida Memory, Inc. 2001-2002 EBS25EC8APFA Ordering Information Part number Clock frequency MHz (max.) /CAS latency Package Contact pad Mounted devices EBS25EC8APFA-7A EBS25EC8APFA-75 * 133 133 2, 3 3 Gold EDS2508APTA 168-pin DIMM Note: 100MHz operation at /CAS latency = 2. Pin Configurations 1 pin 10 pin 11 pin 40 pin 41 pin 85 pin 94 pin 95 pin 124 pin 125 pin Pin No. Pin name Pin No. Pin name Pin No. 1 VSS 2 DQ0 43 VSS 44 NC 3 DQ1 45 4 DQ2 5 DQ3 6 84 pin 168 pin Pin name Pin No. Pin name 85 VSS 127 VSS 86 DQ32 128 CKE0 /CS2 87 DQ33 129 NC 46 DQMB2 88 DQ34 130 DQMB6 47 DQMB3 89 DQ35 131 DQMB7 VDD 48 NC 90 VDD 132 NC 7 DQ4 49 VDD 91 DQ36 133 VDD 8 DQ5 50 NC 92 DQ37 134 NC 9 DQ6 51 NC 93 DQ38 135 NC 10 DQ7 52 CB2 94 DQ39 136 CB6 11 DQ8 53 CB3 95 DQ40 137 CB7 12 VSS 54 VSS 96 VSS 138 VSS 13 DQ9 55 DQ16 97 DQ41 139 DQ48 14 DQ10 56 DQ17 98 DQ42 140 DQ49 15 DQ11 57 DQ18 99 DQ43 141 DQ50 16 DQ12 58 DQ19 100 DQ44 142 DQ51 17 DQ13 59 VDD 101 DQ45 143 VDD 18 VDD 60 DQ20 102 VDD 144 DQ52 19 DQ14 61 NC 103 DQ46 145 NC 20 DQ15 62 NC 104 DQ47 146 NC 21 CB0 63 NC 105 CB4 147 NC 22 CB1 64 VSS 106 CB5 148 VSS 23 VSS 65 DQ21 107 VSS 149 DQ53 24 NC 66 DQ22 108 NC 150 DQ54 25 NC 67 DQ23 109 NC 151 DQ55 26 VDD 68 VSS 110 VDD 152 VSS 27 /WE 69 DQ24 111 /CAS 153 DQ56 28 DQMB0 70 DQ25 112 DQMB4 154 DQ57 29 DQMB1 71 DQ26 113 DQMB5 155 DQ58 30 /CS0 72 DQ27 114 NC 156 DQ59 Data Sheet E0209E20 (Ver. 2.0) 2 EBS25EC8APFA Pin No. Pin name Pin No. Pin name Pin No. Pin name Pin No. Pin name 31 NC 73 VDD 115 /RAS 157 VDD 32 VSS 74 DQ28 116 VSS 158 DQ60 33 A0 75 DQ29 117 A1 159 DQ61 34 A2 76 DQ30 118 A3 160 DQ62 35 A4 77 DQ31 119 A5 161 DQ63 36 A6 78 VSS 120 A7 162 VSS 37 A8 79 CLK2 121 A9 163 CLK3 38 A10 (AP) 80 NC 122 BA0 164 NC 39 BA1 81 NC 123 A11 165 SA0 40 VDD 82 SDA 124 VDD 166 SA1 41 VDD 83 SCL 125 CLK1 167 SA2 42 CLK0 84 VDD 126 A12 168 VDD Pin Description Pin name Function A0 to A12 Address input Row address A0 to A12 Column address A0 to A9 BA0, BA1 Bank select address DQ0 to DQ63 Data input/output CB0 to CB7 Check bit (Data input/output) /CS0, /CS2 Chip select input /RAS Row enable (/RAS) input /CAS Column enable (/CAS) input /WE Write enable input DQMB0 to DQMB7 Byte data mask CLK0 to CLK3 Clock input CKE0 Clock enable input SDA Data input/output for serial PD SCL Clock input for serial PD SA0 to SA2 Serial address input VDD Primary positive power supply VSS Ground NC No connection Data Sheet E0209E20 (Ver. 2.0) 3 EBS25EC8APFA Serial PD Matrix Byte No. Function described Bit7 Bit6 Bit5 Bit4 Bit3 Bit2 Bit1 Bit0 Hex value Comments 0 Number of bytes used by module manufacturer 1 0 0 0 0 0 0 0 80H 128 bytes 1 Total SPD memory size 0 0 0 0 1 0 0 0 08H 256 bytes 2 Memory type 0 0 0 0 0 1 0 0 04H SDRAM 3 Number of row addresses bits 0 0 0 0 1 1 0 1 0DH 13 4 Number of column addresses bits 0 0 0 0 1 0 1 0 0AH 10 5 Number of banks 0 0 0 0 0 0 0 1 01H 1 6 Module data width 0 1 0 0 1 0 0 0 48H 72 bits 7 Module data width (continued) 0 0 0 0 0 0 0 0 00H 0 Module interface signal levels 0 0 0 0 0 0 0 1 01H LVTTL 1 1 1 0 1 0 1 75H 7.5ns 1 0 1 0 1 0 0 54H 5.4ns 8 9 10 SDRAM cycle time at CL = 3 0 (highest /CAS latency) SDRAM access from Clock at CL = 3 0 (highest /CAS latency) 11 Module configuration type 0 0 0 0 0 0 1 0 02H ECC 12 Refresh rate/type 1 0 0 0 0 0 1 0 82H 7.8µs 13 SDRAM width 0 0 0 0 1 0 0 0 08H ×8 14 Error checking SDRAM width 0 0 0 0 1 0 0 0 08H ×8 0 0 0 0 0 0 0 1 01H 1 CLK 1 0 0 0 1 1 1 1 8FH 1, 2, 4, 8, F 0 0 0 0 0 1 0 0 04H 4 0 0 0 0 0 1 1 0 06H 2, 3 0 0 0 0 0 0 0 1 01H 0 0 0 0 0 0 0 0 1 01H 0 15 16 17 18 19 20 SDRAM device attributes: minimum clock delay for back-toback random column addresses SDRAM device attributes: Burst lengths supported SDRAM device attributes: number of banks on SDRAM device SDRAM device attributes: /CAS latency SDRAM device attributes: /CS latency SDRAM device attributes: /WE latency 21 SDRAM device attributes 0 0 0 0 0 0 0 0 00H 22 SDRAM device attributes: General 0 0 0 0 1 1 1 0 0EH 23 SDRAM cycle time at CL = 2 (2nd highest /CAS latency) (-7A) 0 1 1 1 0 1 0 1 75H 7.5ns 1 0 1 0 0 0 0 0 A0H 10ns 24 SDRAM access from Clock at CL = 2 (2nd highest /CAS latency) 0 (-7A) 1 0 1 0 1 0 0 54H 5.4ns 0 1 1 0 0 0 0 0 60H 6ns 0 0 0 0 0 0 0 0 00H 0 0 0 0 1 1 1 1 0FH 15ns 0 0 0 1 0 1 0 0 14H 20ns 0 0 0 0 1 1 1 1 0FH 15ns 0 0 0 0 1 1 1 1 0FH 15ns (-75) (-75) 25 to 26 27 Minimum row precharge time (-7A) (-75) 28 Row active to row active min (-7A) (-75) Data Sheet E0209E20 (Ver. 2.0) 4 EBS25EC8APFA Byte No. Function described Bit7 Bit6 Bit5 Bit4 Bit3 Bit2 Bit1 Bit0 Hex value Comments 29 /RAS to /CAS delay min (-7A) 0 0 0 0 1 1 1 1 0FH 15ns 0 0 0 1 0 1 0 0 14H 20ns (-75) 30 Minimum /RAS pulse width 0 0 1 0 1 1 0 1 2DH 45ns 31 Density of each bank on module 0 1 0 0 0 0 0 0 40H 256MB 0 0 0 1 0 1 0 1 15H 1.5ns 0 0 0 0 1 0 0 0 08H 0.8ns Data signal input setup time 0 0 0 1 0 1 0 1 15H 1.5ns 35 Data signal input hold time 0 0 0 0 1 0 0 0 08H 0.8ns 36 to 61 Superset information 0 0 0 0 0 0 0 0 00H 62 SPD data revision code 0 0 0 1 0 0 1 0 12H 63 Checksum for Bytes 0 to 62 (-7A) 1 0 1 0 0 0 1 1 A3H 1 1 1 0 0 1 0 0 E4H 0 1 1 1 1 1 1 1 7FH Continuation code Elpida Memory 32 33 34 Address and command signal input setup time Address and command signal input hold time (-75) 64 to 65 Manufacturer’s JEDEC ID code 66 Manufacturer’s JEDEC ID code 1 1 1 1 1 1 1 0 FEH 67 to 71 Manufacturer’s JEDEC ID code 0 0 0 0 0 0 0 0 00H 72 Manufacturing location 0 1 1 0 0 1 0 0 64H 1 1 1 1 1 1 1 1 FFH 73 to 90 Manufacturer’s part number 91 to 92 Revision code 93 to 94 Manufacturing date 95 to 98 Assembly serial number 1.2 99 to 125 Manufacturer specific data 126 127 Reserved (Intel specification frequency) Reserved (Intel specification /CAS# latency support) Data Sheet E0209E20 (Ver. 2.0) 5 100MHz EBS25EC8APFA Block Diagram /WE /CS0 /CS2 DQMB0 DQMB2 DQ 0 DQ 1 DQ 2 DQ 3 DQ 4 DQ 5 DQ 6 DQ 7 DQ 7 DQM /CS DQ 6 DQ 5 DQ 4 D0 DQ 3 DQ 2 DQ 1 DQ 0 /WE DQ 16 DQ 17 DQ 18 DQ 19 DQ 20 DQ 21 DQ 22 DQ 23 /WE DQ 4 DQM /CS DQ 7 DQ 6 DQ 5 D4 DQ 3 DQ 2 DQ 1 DQ 0 /WE DQ 7 DQM /CS DQ 6 DQ 5 DQ 4 D7 DQ 3 DQ 2 DQ 1 DQ 0 /WE DQ 7 DQM /CS DQ 6 DQ 5 DQ 4 D8 DQ 3 DQ 2 DQ 1 DQ 0 /WE DQMB3 DQMB1 DQ 8 DQ 9 DQ 10 DQ 11 DQ 12 DQ 13 DQ 14 DQ 15 DQ 7 DQM /CS DQ 6 DQ 5 DQ 4 D3 DQ 3 DQ 2 DQ 1 DQ 0 DQ 7 DQM /CS DQ 6 DQ 5 DQ 4 D1 DQ 3 DQ 2 DQ 1 DQ 0 /WE DQ 4 DQM /WE DQ 24 DQ 25 DQ 26 DQ 27 DQ 28 DQ 29 DQ 30 DQ 31 DQMB6 CB 0 CB 1 CB 2 CB 3 CB 4 CB 5 CB 6 CB 7 DQ 7 DQ 0 DQ 2 DQ 6 DQ 5 DQ 3 DQ 1 /CS DQ 48 DQ 49 DQ 50 DQ 51 DQ 52 DQ 53 DQ 54 DQ 55 D2 DQMB7 DQMB4 DQ 32 DQ 33 DQ 34 DQ 35 DQ 36 DQ 37 DQ 38 DQ 39 DQ 4 DQM /CS DQ 7 DQ 6 DQ 5 D5 DQ 3 DQ 2 DQ 1 DQ 0 /WE DQ 5 DQM /CS DQ 7 DQ 6 DQ 4 D6 DQ 3 DQ 2 DQ 1 DQ 0 /WE DQ 56 DQ 57 DQ 58 DQ 59 DQ 60 DQ 61 DQ 62 DQ 63 DQMB5 DQ 40 DQ 41 DQ 42 DQ 43 DQ 44 DQ 45 DQ 46 DQ 47 CLK0 CLK : D0, D1, D2, D5, D6 A0 to A11 CLK2 CLK : D3, D4, D7, D8 3.3 pF CLK1, CLK3 10 pF A0 - A11 : D0 to D8 BA0 A13 : D0 to D8 BA1 A12 : D0 to D8 /RAS /RAS : D0 to D8 /CAS /CAS : D0 to D8 CKE0 CKE : D0 to D8 SERIAL PD VCC D0 to D8 C VSS Remarks SDA SCL D0 to D8 1. The value of all resistors is 10W. 2. D0 to D8: 256M bits SDRAM A0 A1 A2 SA0 SA1 SA2 Data Sheet E0209E20 (Ver. 2.0) 6 EBS25EC8APFA Electrical Specifications • All voltages are referenced to VSS (GND). • After power up, wait more than 100µs and then, execute power on sequence and CBR (Auto) refresh before proper device operation is achieved. Absolute Maximum Ratings Parameter Symbol Value Unit Voltage on any pin relative to VSS VT –0.5 to VDD + 0.5 (≤ 4.6 (max.)) V Supply voltage relative to VSS VDD –0.5 to +4.6 V Short circuit output current IOS 50 mA Power dissipation PD 9 W Operating temperature TA 0 to +70 °C Storage temperature Tstg –55 to +125 °C Note 1 Notes: 1. SDRAM device specification Caution Exposing the device to stress above those listed in Absolute Maximum Ratings could cause permanent damage. The device is not meant to be operated under conditions outside the limits described in the operational section of this specification Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. DC Operating Conditions (TA = 0 to +70°C) (SDRAM device specification) Parameter Symbol min. max. Unit Note Supply voltage VDD 3.0 3.6 V 1 VSS 0 0 V 2 Input high voltage VIH 2.0 VDD + 0.3 V 3 Input low voltage VIL −0.3 0.8 V 4 Notes: 1. 2. 3. 4. The supply voltage with all VDD pins must be on the same level. The supply voltage with all VSS pins must be on the same level. VIH (max.) = VDD + 2.0V for pulse width ≤ 3ns at VDD. VIL (min.) = VSS − 2.0V for pulse width ≤ 3ns at VSS. Data Sheet E0209E20 (Ver. 2.0) 7 EBS25EC8APFA DC Characteristics1 (TA = 0 to 70°C, VDD = 3.3V ± 0.3V, VSS = 0V) Parameter Symbol Grade max. Unit Test condition Notes Operating current ICC1 -7A 1170 mA Burst length = 1 tRC = tRC (min.) 1, 2, 3 ICC1 -75 990 mA ICC2P 27 mA CKE = VIL, tCK = 12ns 6 ICC2N 180 mA CKE, /CS = VIH, tCK = 12ns 4 ICC3P 36 mA CKE = VIL, tCK = 12ns 1, 2, 6 ICC3N 270 mA CKE, /CS = VIH, tCK = 12ns 1, 2, 4 Burst operating current ICC4 1215 mA tCK = tCK (min.), BL = 4 1, 2, 5 Refresh current ICC5 -7A 2250 mA tRC = tRC (min.) 3 ICC5 -75 1980 mA 27 mA VIH ≥ VDD – 0.2V VIL ≤ 0.2V 7 Standby current in power down Standby current in non power down Active standby current in power down Active standby current in non power down Self refresh current ICC6 Notes: 1. ICC depends on output load condition when the device is selected. ICC (max.) is specified at the output open condition. 2. One bank operation. 3. Input signals are changed once per one clock. 4. Input signals are changed once per two clocks. 5. Input signals are changed once per four clocks. 6. After power down mode, CLK operating current. 7. After self refresh mode set, self refresh current. DC Characteristics2 (TA = 0 to 70°C, VDD = 3.3V ± 0.3V, VSS = 0V) Parameter Symbol min. max. Unit Test condition Input leakage current ILI –9 9 µA 0 ≤ VIN ≤ VDD Output leakage current ILO –1.5 1.5 µA 0 ≤ VOUT ≤ VDD DQ = disable Output high voltage VOH 2.4 — V IOH = –4mA Output low voltage VOL — 0.4 V IOL = 4mA Data Sheet E0209E20 (Ver. 2.0) 8 Notes EBS25EC8APFA Pin Capacitance (TA = 25°C, VDD = 3.3V ± 0.3V) Parameter Symbol Input capacitance Data input/output capacitance Pins max. Unit CI1 Address TBD pF CI2 /RAS, /CAS, /WE TBD pF CI3 CKE TBD pF CI4 /CAS TBD pF CI5 CLK TBD pF CI6 DQMB TBD pF CI/O1 DQ, CB TBD pF Notes AC Characteristics (TA = 0 to 70°C, VDD = 3.3V ± 0.3V, VSS = 0V) (SDRAM device specification) -7A -75 Parameter Symbol min. min. max. Unit Notes System clock cycle time tCK 7.5 7.5 — ns 1 CLK high pulse width tCH 2.5 2.5 — ns 1 CLK low pulse width tCL 2.5 2.5 — ns 1 Access time from CLK tAC — — 5.4 ns 1, 2 Data-out hold time tOH 2.7 2.7 — ns 1, 2 CLK to Data-out low impedance tLZ 1 1 — ns 1, 2, 3 CLK to Data-out high impedance tHZ — — 5.4 ns 1, 4 Input setup time tSI 1.5 1.5 — ns 1 Input hold time tHI 0.8 0.8 — ns 1 Ref/Active to Ref/Active command period tRC 60 67.5 — ns 1 Active to Precharge command period tRAS 45 45 120000 ns 1 Active command to column command (same bank) tRCD 15 20 — ns 1 Precharge to active command period tRP 15 20 — ns 1 Write recovery or data-in to precharge lead time tDPL 15 15 — ns 1 Last data into active latency tDAL 1 2CLK + 15ns 2CLK + 20ns — Active (a) to Active (b) command period tRRD 15 15 — ns Transition time (rise and fall) tT 0.5 0.5 5 ns Refresh period (8192 refresh cycles) tREF — — 64 ms Notes: 1. 2. 3. 4. AC measurement assumes tT = 0.5ns. Reference level for timing of input signals is 1.4V. Access time is measured at 1.4V. Load condition is CL = 50pF. tLZ (min.) defines the time at which the outputs achieves the low impedance state. tHZ (max.) defines the time at which the outputs achieves the high impedance state. Data Sheet E0209E20 (Ver. 2.0) 9 EBS25EC8APFA Test Conditions • Input and output timing reference levels: 1.4V • Input waveform and output load: See following figures 2.4V 0.4V DQ 2.0V 0.8V CL tT tT Input Waveform and Output Load Relationship Between Frequency and Minimum Latency (SDRAM device specification) Parameter -7A Frequency (MHz) 133 133 133 tCK (ns) 7.5 7.5 7.5 Symbol CL = 3 CL = 2 CL = 3 Notes lRCD 2 2 3 1 lRC 8 8 9 1 lRAS 6 6 6 1 lRP 2 2 3 1 lDPL 2 2 2 1 lRRD 2 2 2 1 Self refresh exit time lSREX 1 1 1 2 Last data in to active command (Auto precharge, same bank) lDAL 4 4 5 = [lDPL + lRP] Self refresh exit to command input lSEC 8 8 9 = [lRC] 3 Precharge command to high impedance lHZP 3 2 3 lAPR 1 1 1 lEP –2 –1 –2 lCCD 1 1 1 Write command to data in latency lWCD 0 0 0 DQM to data in lDID 0 0 0 DQM to data out lDOD 2 2 2 /CAS latency Active command to column command (same bank) Active command to active command (same bank) Active command to precharge command (same bank) Precharge command to active command (same bank) Write recovery or data-in to precharge command (same bank) Active command to active command (different bank) Last data out to active command (Auto precharge, same bank) Last data out to precharge (early precharge) Column command to column command -75 CKE to CLK disable lCLE 1 1 1 Register set to active command lMRD 2 2 2 /CS to command disable lCDD 0 0 0 Power down exit to command input lPEC 1 1 1 Notes: 1. IRCD to IRRD are recommended value. 2. Be valid [DESL] or [NOP] at next command of self refresh exit. 3. Except [DESL] and [NOP] Data Sheet E0209E20 (Ver. 2.0) 10 EBS25EC8APFA Pin Functions CLK0 to CLK3 (input pin): CLK is the master clock input to this pin. The other input signals are referred at CLK rising edge. /CS0 to /CS3 (input pin): When /CS is Low, the command input cycle becomes valid. When /CS is High, all inputs are ignored. However, internal operations (bank active, burst operations, etc.) are held. /RAS, /CAS and /WE (input pins): Although these pin names are the same as those of conventional DRAMs, they function in a different way. These pins define operation commands (read, write, etc.) depending on the combination of their voltage levels. For details, refer to the command operation section. A0 to A12 (input pins): Row address (AX0 to AX12) is determined by A0 to A12 level at the bank active command cycle CLK rising edge. Column address (AY0 to AY9) is determined by A0 to A9 level at the read or write command cycle CLK rising edge. And this column address becomes burst access start address. A10 defines the precharge mode. When A10 = High at the precharge command cycle, all banks are precharged. But when A10 = Low at the precharge command cycle, only the bank that is selected by BA0 and BA1 (BA) is precharged. BA0 and BA1 (input pin) BA0 and BA1 are bank select signal (BA). (See Bank Select Signal Table) [Bank Select Signal Table] BA0 BA1 Bank 0 L L Bank 1 H L Bank 2 L H Bank 3 H H Remark: H: VIH. L: VIL. CKE0 (input pin): This pin determines whether or not the next CLK is valid. If CKE is High, the next CLK rising edge is valid. If CKE is Low, the next CLK rising edge is invalid. This pin is used for power-down and clock suspend modes. DQMB0 to DQMB7 (input pins): Read operation: If DQMB is High, the output buffer becomes High-Z. If the DQMB is Low, the output buffer becomes Low-Z. Write operation: If DQMB is High, the previous data is held (the new data is not written). If DQMB is Low, the data is written. DQ0 to DQ63 (input/output pins): Data is input to and output from these pins. VDD (power supply pins): 3.3V is applied. VSS (power supply pins): Ground is connected. Detailed Operation Part Refer to the EDS2504APTA/08APTA/16APTA datasheet (E0272E). Data Sheet E0209E20 (Ver. 2.0) 11 EBS25EC8APFA Physical Outline Front side Unit: mm 3.00 (DATUM -A-) 4.80 Max 4.00 Min (63.67) 3.00 Component area (Front) 1 84 B C 11.43 A 36.83 1.27 54.61 133.35 Back side 127.35 2 – φ 3.00 85 34.93 17.80 4.00 168 Component area (Back) (DATUM -A-) Detail B R FULL Detail C (DATUM -A-) 1.00 2.00 ± 0.10 R FULL 6.35 3.125 ± 0.125 6.35 3.125 ± 0.125 1.00 ± 0.05 1.27 0.050 0.20 ± 0.15 2.50 ± 0.20 Detail A 4.175 2.00 ± 0.10 Note: Tolerance on all dimensions ± 0.15 unless otherwise specified. ECA-TS2-0049-01 Data Sheet E0209E20 (Ver. 2.0) 12 EBS25EC8APFA CAUTION FOR HANDLING MEMORY MODULES When handling or inserting memory modules, be sure not to touch any components on the modules, such as the memory ICs, chip capacitors and chip resistors. It is necessary to avoid undue mechanical stress on these components to prevent damaging them. In particular, do not push module cover or drop the modules in order to protect from mechanical defects, which would be electrical defects. When re-packing memory modules, be sure the modules are not touching each other. Modules in contact with other modules may cause excessive mechanical stress, which may damage the modules. MDE0202 NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR MOS DEVICES Exposing the MOS devices to a strong electric field can cause destruction of the gate oxide and ultimately degrade the MOS devices operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it, when once it has occurred. Environmental control must be adequate. When it is dry, humidifier should be used. It is recommended to avoid using insulators that easily build static electricity. MOS devices must be stored and transported in an anti-static container, static shielding bag or conductive material. All test and measurement tools including work bench and floor should be grounded. The operator should be grounded using wrist strap. MOS devices must not be touched with bare hands. Similar precautions need to be taken for PW boards with semiconductor MOS devices on it. 2 HANDLING OF UNUSED INPUT PINS FOR CMOS DEVICES No connection for CMOS devices input pins can be a cause of malfunction. If no connection is provided to the input pins, it is possible that an internal input level may be generated due to noise, etc., hence causing malfunction. CMOS devices behave differently than Bipolar or NMOS devices. Input levels of CMOS devices must be fixed high or low by using a pull-up or pull-down circuitry. Each unused pin should be connected to VDD or GND with a resistor, if it is considered to have a possibility of being an output pin. The unused pins must be handled in accordance with the related specifications. 3 STATUS BEFORE INITIALIZATION OF MOS DEVICES Power-on does not necessarily define initial status of MOS devices. Production process of MOS does not define the initial operation status of the device. Immediately after the power source is turned ON, the MOS devices with reset function have not yet been initialized. Hence, power-on does not guarantee output pin levels, I/O settings or contents of registers. MOS devices are not initialized until the reset signal is received. Reset operation must be executed immediately after power-on for MOS devices having reset function. CME0107 Data Sheet E0209E20 (Ver. 2.0) 13 EBS25EC8APFA The information in this document is subject to change without notice. Before using this document, confirm that this is the latest version. No part of this document may be copied or reproduced in any form or by any means without the prior written consent of Elpida Memory, Inc. Elpida Memory, Inc. does not assume any liability for infringement of any intellectual property rights (including but not limited to patents, copyrights, and circuit layout licenses) of Elpida Memory, Inc. or third parties by or arising from the use of the products or information listed in this document. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of Elpida Memory, Inc. or others. Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of the customer's equipment shall be done under the full responsibility of the customer. Elpida Memory, Inc. assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. [Product applications] Elpida Memory, Inc. makes every attempt to ensure that its products are of high quality and reliability. However, users are instructed to contact Elpida Memory's sales office before using the product in aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment, medical equipment for life support, or other such application in which especially high quality and reliability is demanded or where its failure or malfunction may directly threaten human life or cause risk of bodily injury. [Product usage] Design your application so that the product is used within the ranges and conditions guaranteed by Elpida Memory, Inc., including the maximum ratings, operating supply voltage range, heat radiation characteristics, installation conditions and other related characteristics. Elpida Memory, Inc. bears no responsibility for failure or damage when the product is used beyond the guaranteed ranges and conditions. Even within the guaranteed ranges and conditions, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating Elpida Memory, Inc. products does not cause bodily injury, fire or other consequential damage due to the operation of the Elpida Memory, Inc. product. [Usage environment] This product is not designed to be resistant to electromagnetic waves or radiation. This product must be used in a non-condensing environment. If you export the products or technology described in this document that are controlled by the Foreign Exchange and Foreign Trade Law of Japan, you must follow the necessary procedures in accordance with the relevant laws and regulations of Japan. Also, if you export products/technology controlled by U.S. export control regulations, or another country's export control laws or regulations, you must follow the necessary procedures in accordance with such laws or regulations. If these products/technology are sold, leased, or transferred to a third party, or a third party is granted license to use these products, that third party must be made aware that they are responsible for compliance with the relevant laws and regulations. M01E0107 Data Sheet E0209E20 (Ver. 2.0) 14