EPIGAP EPD-880-1-0.9-1

SMD-Photodiode
EPD-880-1-0.9-1
28.01.2008
rev. 01
Wavelength
Type
Technology
Case
Infrared
SMD
GaAs
SMD 1206
Description
Selective photodiode with narrow
bandwidth and high spectral sensitivity in
the infrared range (810…950 nm).
Compact design in standard SMD
package allows for easy circuit board
mounting and assembling of arrays.
Applications
Alarm systems, light barriers, special
sensors
Miscellaneous Parameters
Tamb = 25°C, unless otherwise specified
Test сonditions
Parameter
Symbol
Value
Unit
A
0.62
mm²
Temperature coefficient of ID
TCID
5
%/K
Operating temperature range
Tamb
-20 to +85
°C
Storage temperature range
Tstg
-40 to +125
°C
Typ
Max
Unit
Active area
Optical and Electrical Characteristics
Tamb = 25°C, unless otherwise specified
Parameter
Test conditions
Symbol
Min
IR = 10 µA
VR
5
Dark current
VR = 1 V
ID
1.0
Peak sensitivity wavelength
VR = 0 V
λp
890
nm
Responsivity at λP
VR = 0 V
Sλ
0.3
0.55
A/W
VR = 0 V
λmin, λmax
800
VR = 0 V
∆λ0.5
115
Shunt resistance
VR = 10 mV
RSH
205
Noise equivalent power
λ = 880 nm
Specific detectivity
λ = 880 nm
D*
Junction capacitance
VR = 0 V
CJ
500
pF
Switching time (RL = 50 Ω)
VR = 1 V
tr , tf
175
ns
Breakdown voltage1)
Sensitivity range at 10%
1)
Spectral bandwidth at 50%
1)
NEP
V
2.5
960
3.2x10
nA
nm
nm
GΩ
-14
2.4x10
W/ Hz
cm ⋅ Hz ⋅ W −1
12
for information only
Labeling
Type
Lot N°
Typ. Sλ [A/W]
Quantity
EPD-880-1-0.9-1
*Note: All measurements carried out with EPIGAP equipment
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications.All operating parameters must be validated for each customer application by the customer.
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
1 of 2
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
SMD-Photodiode
EPD-880-1-0.9-1
28.01.2008
Typical spectral response [A/W]
rev. 01
Relative Photocurrent vs. Temperature
0,6
1,30
1,25
UR = 5V
TK = 0,25%/K
0,5
1,20
1,15
Relative Photocurrent
0,4
0,3
0,2
0,1
1,10
1,05
1,00
0,95
0,90
0,85
0,0
0,80
-40
700
750
800
850
900
Wavelength [nm]
950
-20
0
1000
20
40
60
80
100
120
Temperature (°C)
Dark Current vs. Temperature
Short-circuit current vs. irradiance (typical)
2)
100
3
10
UR = 1V
TK = 1,05 times/K
2
Short-circuit current [µA]
Dark Current (pA)
10
1
10
1
10
0
10
-1
10
0,1
-2
-40
-20
0
20
40
Temperature (°C)
60
80
100
120
10
-2
10
-1
10
0
10
2
Irradiance [mW/cm ]
1
10
2
10
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications.All operating parameters must be validated for each customer application by the customer.
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
2 of 2
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545