EPIGAP EPC-525-0.5

Photodiode-Chip
EPC-525-0.5
Preliminary
03.05.2007
rev. 04/07
Wavelength range
Type
Technology
Electrodes
Green, selective
Integrated filter
GaP
P (anode) up
typ. dimensions (µm)
460
360
300
typ. thickness
gold alloy, 1.5 µm
Description
Narrow bandwidth and
high spectral sensitivity in
the range of max. eye
responsivity (480…560
nm), low cost chip
cathode
Applications
gold alloy, 0.5 µm
Nearly V‫ ג‬matched
detection, measurement
systems, daylight sensors
260 (±20) µm
anode
Miscellaneous Parameters
Tamb = 25°C, unless otherwise specified
Parameter
Test сonditions
Symbol
Value
Unit
A
0.17
mm²
Operating temperature range
Tamb
-40 to +125
°C
Storage temperature range
Tstg
-40 to +125
°C
Active area
Temperature coefficient of I D
T = -40…120°C
TCID
4.7
%/K
Temperature coefficient of I PH
T = -40…120°C
TCIPH
0.25
%/K
Temperature coefficient of λc
T = -40…120°C
TCλc
0.15
nm/K
Typ
Max
Unit
Optical and Electrical Characteristics
Tamb = 25°C, unless otherwise specified
Test
Parameter
conditions
IR = 10 µA
Breakdown voltage3
Symbol
Min
VR
5
V
VR = 5 V
ID
5
VR = 0 V
λp
525
nm
VR = 0 V
Sλ
0.04
0.08
A/W
VR = 0 V
Sλ
0.15
0.3
A/W
VR = 0 V
λmin, λmax
410
Spectral bandwidth at 50%
VR = 0 V
∆λ0.5
70
nm
Junction capacitance
VR = 0 V
CJ
25
pF
Switching time (RL = 50 Ω)
VR = 1 V
tr , t f
30
ns
Dark current
Peak sensitivity wavelength
Responsivity at λp
1
Responsivity at λp
2
Sensitivity range at 1%
1
30
pA
580
nm
1
Measured on bare chip on TO-18 header
2
Measured on epoxy covered chip on TO-18 header
3
information only
Labeling
Type
Typ. ID [pA]
Typ. Sλ[A/W]
Lot N°
Quantity
EPС-525-0.5
Packing: Chips on adhesive film with wire-bond side on top
*Note: All measurements carried out with EPIGAP equipment
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
1 of 3
Photodiode-Chip
EPC-525-0.5
Preliminary
03.05.2007
rev. 04/07
Typical sensitivity spectrum
Sensitivity (arb. units)
1,0
0,8
0,6
0,4
0,2
0,0
400
450
500
550
600
Wavelength [nm]
Relative Photocurrent vs. Temperature of EPC-525-0.5
1,30
UR = 5V
TK = 0,25%/K
1,25
1,20
Relative Photocurrent
1,15
1,10
1,05
1,00
0,95
0,90
0,85
0,80
-40
-20
0
20
40
Temperature (°C)
60
80
100
120
EPIGAPOptoelektronik GmbH
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
2 of 3
Photodiode-Chip
EPC-525-0.5
Preliminary
03.05.2007
rev. 04/07
Dark Current vs. Temperature of EPC-525-0.5
100
UR = 5V
TK = 1,047 times/K
Dark Current (pA)
10
1
0,1
-40
-20
0
20
40
Temperature (°C)
60
80
100
120
EPIGAPOptoelektronik GmbH
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
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