Photodiode EPD-470-5-0.5 Preliminary 11.04.2007 rev. 04/07 Wavelength Type Technology Case Blue - Green Integrated filter GaP 5 mm plastic lens Description Selective photodiode chip in standard 5 mm package. Narrow bandwidth and high spectral sensitivity in the range of 400 - 560 nm. Housing without standoff leads. 9,15 5,75 - 0,3 1 2,54 0,8 - 0,4 Anode 1,5 0,6 - 0,2 36,5 ± 1,0 Ø5 Note: Special packages with standoff available on request Applications Optical communications, safety equipment, automation, analytics, fluorescence detection Miscellaneous Parameters Tamb = 25°C, unless otherwise specified Test сonditions Parameter Symbol Value Unit A 0.17 mm² Temperature coefficient of ID TC(ID) 5 %/K Operating temperature range Tamb -40 to +85 °C Storage temperature range Tstg -40 to +100 °C ϕ 20 deg. Typ Max Unit Active area Acceptance angle at 50% Sλ Optical and Electrical Characteristics Tamb = 25°C, unless otherwise specified Parameter Test conditions Symbol IR = 10 µA VR 10 Dark current VR = 5 V ID 5 30 pA Peak sensitivity wavelength VR = 0 V λp 470 480 nm Responsivity at 470 nm VR = 0 V Sλ VR = 0 V λmin, λmax VR = 0 V ∆λ0.5 Shunt resistance VR = 10 mV RSH Noise equivalent power λ = 470 nm Specific detectivity λ = 470 nm D* Junction capacitance VR = 0 V CJ 120 pF Switching time (RL = 50 Ω) VR = 5 V tr , tf 200 ns VR = 0 V Ev = 1000 lx IPh 0.2 µA Breakdown voltage1) Sensitivity range at 1% 1) Spectral bandwidth at 50% Photo current at Illuminant A 1) Min 460 V 0.3 A/W 385 565 100 70 NEP nm 100 4.4x10 nm GΩ -15 9.3x10 W/ Hz cm ⋅ Hz ⋅ W −1 12 for information only Note: All measurements carried out with EPIGAP equipment Labeling Type Lot N° RD (typ.) [GΩ] Quantity EPD-470-5-0.5 EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 1 of 2 Photodiode EPD-470-5-0.5 Preliminary 11.04.2007 rev. 04/07 Dark current vs. ambient temperature Typical Optical Responsivity (A/W) 400 0,1 VR = 5V 300 ID (pA) VR = 1V 0,01 200 1E-3 100 1E-4 350 0 400 450 500 Wavelength [nm] 550 20 600 40 60 80 100 120 Temperature T amb (°C) Short circuit current vs. illuminance* Junction capacitance vs. reverse voltage 140 3 10 120 Short circuit current IPh (nA) Junction capacitance CJ (pF) 2 10 100 80 60 1 10 0 10 10 -1 10 -2 40 0 1 2 3 4 0 1 10 5 2 10 4 10 10 rel. sensitivity wavelength vs. ambient temperature rel. to λ P at T amb = 25°C Relative Photo-current vs. ambient temperature 1,20 12 1,15 10 1,10 8 Wavelength shift in nm rel. photo-current (arb. units) 3 10 Illuminance Ev (lx) Reverse Voltage VR (V) 1,05 1,00 0,95 6 4 2 0,90 0 0,85 20 30 40 50 60 70 Ambient temperature Tamb (°C) 80 90 100 20 40 60 80 100 120 Ambient temperature (°C) EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 2 of 2