ESMT F25S04PA-50HG

ESMT
(Preliminary)
Flash
„
2.5V Only 4 Mbit Serial Flash Memory
with Dual Output
FEATURES
y
y
Single supply voltage 2.3~3.3V
Standard, Dual SPI
y
Speed
- Read max frequency: 33MHz
- Fast Read max frequency: 50MHz; 86MHz; 100MHz
- Fast Read Dual max frequency: 50MHz / 86MHz/ 100MHz
(100MHz / 172MHz/ 200MHz equivalent Dual SPI)
y
Low power consumption
- Active current: 25 mA
- Standby current: 5 μ A
- Deep Power Down current: 3 μ A
y
Reliability
- 100,000 typical program/erase cycles
- 20 years Data Retention
y
Program
- Byte programming time: 7 μ s (typical)
- Page programming time: 0.8 ms (typical)
„
F25S04PA
y
Erase
- Chip erase time 3 sec (typical)
- Block erase time 0.4 sec (typical)
- Sector erase time 40 ms (typical)
y
Page Programming
- 256 byte per programmable page
y
SPI Serial Interface
- SPI Compatible: Mode 0 and Mode 3
y
End of program or erase detection
y
Write Protect ( WP )
y
Hold Pin ( HOLD )
y
All Pb-free products are RoHS-Compliant
ORDERING INFORMATION
Product ID
Speed
Package
COMMENTS
F25S04PA –50PG
50MHz
8-lead SOIC
150 mil
Pb-free
F25S04PA –86PG
86MHz
8-lead SOIC
150 mil
Pb-free
F25S04PA –100PG
100MHz
8-lead SOIC
150 mil
Pb-free
F25S04PA –50PAG
50MHz
8-lead SOIC
200 mil
Pb-free
F25S04PA –86PAG
86MHz
8-lead SOIC
200 mil
Pb-free
F25S04PA –100PAG
100MHz
8-lead SOIC
200 mil
Pb-free
F25S04PA –50DG
50MHz
8-lead PDIP
300 mil
Pb-free
F25S04PA –86DG
86MHz
8-lead PDIP
300 mil
Pb-free
F25S04PA –100DG
100MHz
8-lead PDIP
300 mil
Pb-free
F25S04PA –50HG
50MHz
8-lead DFN
5x6 mm
Pb-free
F25S04PA –86HG
86MHz
8-lead DFN
5x6 mm
Pb-free
F25S04PA –100HG
100MHz
8-lead DFN
5x6 mm
Pb-free
Elite Semiconductor Memory Technology Inc.
Publication Date: May 2009
Revision: 0.2
1/34
ESMT
„
(Preliminary)
GENERAL DESCRIPTION
The F25S04PA is a 4Megabit, 2.5V only CMOS Serial Flash
memory device. The device supports the standard Serial
Peripheral Interface (SPI), and a Dual SPI. ESMT’s memory
devices reliably store memory data even after 100,000
programming and erase cycles.
is divided into 128 uniform sectors with 4K byte each; 8 uniform
blocks with 64K byte each. Sectors can be erased individually
without affecting the data in other sectors. Blocks can be erased
individually without affecting the data in other blocks. Whole chip
erase capabilities provide the flexibility to revise the data in the
device. The device has Sector, Block or Chip Erase but no page
erase.
The memory array can be organized into 2,048 programmable
pages of 256 byte each. 1 to 256 byte can be programmed at a
time with the Page Program instruction.
The sector protect/unprotect feature disables both program and
erase operations in any combination of the sectors of the
memory.
The device features sector erase architecture. The memory array
„
F25S04PA
PIN CONFIGURATIONS
8- LEAD SOIC
CE
1
8
VDD
SO
2
7
HOLD
WP
3
6
SCK
VSS
4
5
SI
Elite Semiconductor Memory Technology Inc.
Publication Date: May 2009
Revision: 0.2
2/34
ESMT
(Preliminary)
F25S04PA
8- LEAD PDIP
CE
1
8
VDD
SO
2
7
HOLD
WP
3
6
SCK
VSS
4
5
SI
8- LEAD DFN
CE
1
8
VDD
SO
2
7
HOLD
WP
3
6
SCK
VSS
4
5
SI
Elite Semiconductor Memory Technology Inc.
Publication Date: May 2009
Revision: 0.2
3/34
ESMT
„
„
(Preliminary)
F25S04PA
PIN DESCRIPTION
Symbol
Pin Name
Functions
SCK
Serial Clock
To provide the timing for serial input and
output operations
SI
Serial Data Input
To transfer commands, addresses or data
serially into the device.
Data is latched on the rising edge of SCK.
SO
Serial Data Output
To transfer data serially out of the device.
Data is shifted out on the falling edge of
SCK.
CE
Chip Enable
To activate the device when CE is low.
WP
Write Protect
The Write Protect ( WP ) pin is used to
enable/disable BPL bit in the status
register.
HOLD
Hold
VDD
Power Supply
VSS
Ground
To temporality stop serial communication
with SPI flash memory without resetting
the device.
To provide power.
FUNCTIONAL BLOCK DIAGRAM
Address
Buffers
and
Latches
Flash
X-Decoder
Y-Decoder
I/O Butters
and
Data Latches
Control Logic
Serial Interface
CE
SCK
Elite Semiconductor Memory Technology Inc.
SI
SO
WP
HOLD
Publication Date: May 2009
Revision: 0.2
4/34
ESMT
„
(Preliminary)
F25S04PA
SECTOR STRUCTURE
Table 1: F25S04PA Sector Address Table
Block
7
6
5
4
3
2
1
0
Sector
Sector Size
(Kbytes)
127
4KB
Address range
A17
A16
1
1
1
1
1
0
1
0
1
1
0
0
0
1
1
0
1
0
0
0
1
0
0
0
07F000H – 07FFFFH
:
:
112
4KB
070000H – 070FFFH
111
4KB
06F000H – 06FFFFH
:
:
:
:
96
4KB
060000H – 060FFFH
95
4KB
05F000H – 05FFFFH
:
:
:
80
4KB
050000H – 050FFFH
79
4KB
04F000H – 04FFFFH
:
:
:
64
4KB
040000H – 040FFFH
63
4KB
03F000H – 03FFFFH
:
:
48
4KB
030000H – 030FFFH
47
4KB
02F000H – 02FFFFH
:
:
32
4KB
020000H – 020FFFH
31
4KB
01F000H – 01FFFFH
:
:
:
:
:
16
4KB
010000H – 010FFFH
15
4KB
00F000H – 00FFFFH
:
:
:
0
4KB
000000H – 000FFFH
Elite Semiconductor Memory Technology Inc.
Block Address
A18
Publication Date: May 2009
Revision: 0.2
5/34
ESMT
„
(Preliminary)
F25S04PA
STATUS REGISTER
The software status register provides status on whether the flash
memory array is available for any Read or Write operation,
whether the device is Write enabled, and the state of the memory
Write protection. During an internal Erase or Program operation,
the status register may be read only to determine the completion
of an operation in progress. Table 2 describes the function of
each bit in the software status register.
Table 2: Software Status Register
Bit
Name
0
BUSY
1
WEL
2
3
4
5
6
BP0
BP1
BP2
TB
RESERVED
7
BPL
Function
1 = Internal Write operation is in progress
0 = No internal Write operation is in progress
1 = Device is memory Write enabled
0 = Device is not memory Write enabled
Indicate current level of block write protection (See Table 3)
Indicate current level of block write protection (See Table 3)
Indicate current level of block write protection (See Table 3)
Top / Bottom write protect
Reserved for future use
1 = BP2,BP1,BP0 and TB are read-only bits
0 = BP2,BP1,BP0 and TB are read/writable
Default at
Power-up
Read/Write
0
R
0
R
0
0
0
0
0
R/W
R/W
R/W
R/W
N/A
0
R/W
Note:
1. Only BP0, BP1, BP2, TB and BPL are writable.
2. BP0, BP1, BP2, TB and BPL are non-volatile; others volatile.
3. All area are protected at power-on (BP2=BP1=BP0=1)
WRITE ENABLE LATCH (WEL)
BUSY
The Write-Enable-Latch bit indicates the status of the internal
memory Write Enable Latch. If this bit is set to “1”, it indicates the
device is Write enabled. If the bit is set to “0” (reset), it indicates
the device is not Write enabled and does not accept any memory
Write (Program/ Erase) commands. This bit is automatically reset
under the following conditions:
The Busy bit determines whether there is an internal Erase or
Program operation in progress. A “1” for the Busy bit indicates
the device is busy with an operation in progress. A “0” indicates
the device is ready for the next valid operation.
•
•
•
•
•
•
•
Power-up
Write Disable (WRDI) instruction completion
Page Program instruction completion
Sector Erase instruction completion
Block Erase instruction completion
Chip Erase instruction completion
Write Status Register instructions
Elite Semiconductor Memory Technology Inc.
Top/Bottom Block Protect (TB)
The Top/Bottom bit (TB) controls if the Block-Protection (BP2,
BP1, BP0) bits protect from the Top (TB=0) or the Bottom (TB=1)
of the array as show in Table 3, The TB bit can be set with Write
Status Register (WRSR) instruction. The TB bit can not be written
to if the Block- Protection-Look (BPL) bit is 1 or WP is low.
Publication Date: May 2009
Revision: 0.2
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ESMT
(Preliminary)
F25S04PA
Table 3: F25S04PA Block Protection Table
Protection Level
Status Register Bit
TB
BP2
BP1
Protected Memory Area
BP0
Block Range
Address Range
0
X
0
0
0
None
None
Upper 1/8
0
0
0
1
Block 7
070000H – 07FFFFH
Upper 1/4
0
0
1
0
Block 6~7
060000H – 07FFFFH
Upper 1/2
0
0
1
1
Block 4~7
040000H – 07FFFFH
Lower 1/8
1
0
0
1
Block 0
000000H – 00FFFFH
Lower 1/4
1
0
1
0
Block 0~1
000000H – 01FFFFH
Lower 1/2
1
0
1
1
Block 0~3
000000H – 03FFFFH
All Blocks
X
1
X
X
Block 0~7
000000H – 07FFFFH
Block Protection (BP2, BP1, BP0)
Block Protection Lock-Down (BPL)
The Block-Protection (BP2, BP1, BP0) bits define the size of the
memory area, as defined in Table 3, to be software protected
against any memory Write (Program or Erase) operations. The
Write Status Register (WRSR) instruction is used to program the
WP pin driven low (VIL), enables the Block-ProtectionLock-Down (BPL) bit. When BPL is set to 1, it prevents any
further alteration of the TB, BPL, BP2, BP1, and BP0 bits. When
BP2, BP1, BP0 bits as long as WP is high or the BlockProtection-Look (BPL) bit is 0. Chip Erase can only be executed if
Block-Protection bits are all 0. After power-up, BP2, BP1 and BP0
are set to 0.
Elite Semiconductor Memory Technology Inc.
the WP pin is driven high (VIH), the BPL bit has no effect and its
value is “Don’t Care”. After power-up, the BPL bit is reset to 0.
Publication Date: May 2009
Revision: 0.2
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ESMT
„
(Preliminary)
F25S04PA
HOLD OPERATION
HOLD pin is used to pause a serial sequence underway with the
SPI flash memory without resetting the clocking sequence. To
Hold mode when the SCK next reaches the active low state. See
Figure 1 for Hold Condition waveform.
activate the HOLD mode, CE must be in active low state. The
Once the device enters Hold mode, SO will be in high impedance
state while SI and SCK can be VIL or VIH.
HOLD mode begins when the SCK active low state coincides
with the falling edge of the HOLD signal. The HOLD mode ends
when the HOLD signal’s rising edge coincides with the SCK
active low state.
If the falling edge of the HOLD signal does not coincide with the
SCK active low state, then the device enters Hold mode when the
SCK next reaches the active low state.
If CE is driven active high during a Hold condition, it resets the
internal logic of the device. As long as HOLD signal is low, the
memory remains in the Hold condition. To resume
communication with the device, HOLD must be driven active
high, and CE must be driven active low. See Figure 22 for Hold
timing.
Similarly, if the rising edge of the HOLD signal does not
coincide with the SCK active low state, then the device exits in
SCK
HO LD
A c t iv e
H o ld
H old
A c ti v e
A c t iv e
Figure 1: HOLD Condition Waveform
„
WRITE PROTECTION
The device provides software Write Protection.
The Write-Protect pin ( WP ) enables or disables the lock-down
function of the status register. The Block-Protection bits (BP2,
BP1, BP0, and BPL) in the status register provide Write
protection to the memory array and the status register. See Table
4 for Block-Protection description.
Write Protect Pin ( WP )
Table 4: Conditions to Execute Write-Status-Register (WRSR)
Instruction
WP
BPL
Execute WRSR Instruction
L
1
Not Allowed
L
0
Allowed
H
X
Allowed
The Write-Protect ( WP ) pin enables the lock-down function of
the BPL bit (bit 7) in the status register. When WP is driven low,
the execution of the Write Status Register (WRSR) instruction is
determined by the value of the BPL bit (see Table 4). When WP
is high, the lock-down function of the BPL bit is disabled.
Elite Semiconductor Memory Technology Inc.
Publication Date: May 2009
Revision: 0.2
8/34
ESMT
„
(Preliminary)
F25S04PA
INSTRUCTIONS
Instructions are used to Read, Write (Erase and Program), and
configure the F25S04PA. The instruction bus cycles are 8 bits
each for commands (Op Code), data, and addresses. Prior to
executing any Page Program, Write Status Register, Sector
Erase, Block Erase, or Chip Erase instructions, the Write Enable
(WREN) instruction must be executed first. The complete list of
the instructions is provided in Table 5. All instructions are
entered and must be driven high after the last bit of the instruction
has been shifted in (except for Read, Read ID, Read Status
Register, Read Electronic Signature instructions). Any low to high
synchronized off a high to low transition of CE . Inputs will be
accepted on the rising edge of SCK starting with the most
Instruction commands (Op Code), addresses, and data are all
input from the most significant bit (MSB) first.
transition on CE , before receiving the last bit of an instruction
bus cycle, will terminate the instruction in progress and return the
device to the standby mode.
significant bit. CE must be driven low before an instruction is
Table 5: Device Operation Instructions
Operation
Read
Fast Read
Fast Read Dual
11,12
Output
Sector Erase4 (4K Byte)
Block Erase4, (64K Byte)
Max.
Freq
SIN
33 MHz 03H
0BH
Read Status Register
(RDSR) 6
Write Status Register
(WRSR)
Write Enable (WREN) 9
Write Disable (WRDI)
Deep Power Down (DP)
Release from Deep
Power Down (RDP)
Read Electronic
7
Signature (RES)
Jedec Read ID
(JEDEC-ID) 8
Read ID (RDID) 10
2
SOUT
SIN
Hi-Z A23-A16
Hi-Z A23-A16
3BH
20H
D8H
60H /
C7H
Chip Erase
Page Program (PP)
1
Bus Cycle 1~3
4
SOUT SIN SOUT SIN SOUT SIN
Hi-Z A15-A8 Hi-Z A7-A0 Hi-Z
X
Hi-Z A15-A8 Hi-Z A7-A0 Hi-Z
X
3
A23-A16
A15-A8
A7-A0
5
6
SOUT
DOUT0
X
SIN
X
X
X
N
SOUT
DOUT1
DOUT0
SIN
SOUT
X
X
cont.
cont.
cont.
DOUT0~1
Hi-Z A23-A16 Hi-Z A15-A8 Hi-Z A7-A0 Hi-Z
Hi-Z A23-A16 Hi-Z A15-A8 Hi-Z A7-A0 Hi-Z
-
-
-
-
-
-
Hi-Z
-
-
-
-
-
-
DIN0
Hi-Z
DIN1
Hi-Z
-
-
-
-
-
-
Up to
256 Hi-Z
bytes
02H
Hi-Z A23-A16 Hi-Z A15-A8 Hi-Z A7-A0 Hi-Z
05H
Hi-Z
X
DOUT
-
-
-
-
-
-
-
-
-
-
01H
Hi-Z
DIN
Hi-Z
-
-
-.
-
-
-
-
-
-
-
100MHz 06H
04H
B9h
Hi-Z
Hi-Z
Hi-Z
-
-
-
-
-
-
-
-
-
-
-
-
ABH
Hi-Z
-
-
-
-
-
-
-
-
-
-
-
-
ABH
Hi-Z
X
X
X
X
X
X
X
12H
-
-
-
-
9FH
Hi-Z
X
8CH
X
20H
X
13H
-
-
-
-
-
-
90H
Hi-Z
00H
Hi-Z
00H
Hi-Z
00H
01H
Hi-Z
Hi-Z
X
X
8CH
12H
X
X
12H
8CH
-
-
50MHz
~
Note:
1.
2.
3.
4.
5.
Operation: SIN = Serial In, SOUT = Serial Out, Bus Cycle 1 = Op Code
X = Dummy Input Cycles (VIL or VIH); - = Non-Applicable Cycles (Cycles are not necessary); cont. = continuous
One bus cycle is eight clock periods.
Sector Earse addresses: use AMS -A12, remaining addresses can be VIL or VIH
Block Earse addresses: use AMS -A16, remaining addresses can be VIL or VIH
To continue programming to the next sequential address location, enter the 8-bit command, followed by the data to be
programmed.
6.
The Read-Status-Register is continuous with ongoing clock cycles until terminated by a low to high transition on CE .
7.
8.
The Read-Electronic-Signature is continuous with on going clock cycles until terminated by a low to high transition on CE .
The Jedec-Read-ID is output first byte 8CH as manufacture ID; second byte 20H as top memory type; third byte 13H as
memory capacity.
The Write-Enable (WREN) instruction and the Write-Status-Register (WRSR) instruction must work in conjunction of each
other. The WRSR instruction must be executed immediately (very next bus cycle) after the WREN instruction to make both
9.
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Publication Date: May 2009
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ESMT
(Preliminary)
F25S04PA
instructions effective. WREN can enable WRSR, user just need to execute it. A successful WRSR can reset WREN.
10. The Manufacture ID and Device ID output will repeat continuously until CE terminates the instruction.
11. Dual commands use bidirectional IO pins. DOUT and cont. are serial data out; others are serial data in.
12. Dual output data:
IO0 = (D6, D4, D2, D0), (D6, D4, D2, D0)
IO1 = (D7, D5, D3, D1), (D7, D5, D3, D1)
DOUT0
DOUT1
Elite Semiconductor Memory Technology Inc.
Publication Date: May 2009
Revision: 0.2
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ESMT
(Preliminary)
F25S04PA
Read (33MHz)
The Read instruction supports up to 33 MHz, it outputs the data
starting from the specified address location. The data output
stream is continuous through all addresses until terminated by a
the data from address location 7FFFFH had been read, the next
output will be from address location 00000H.
low to high transition on CE . The internal address pointer will
automatically increment until the highest memory address is
reached. Once the highest memory address is reached, the
address pointer will automatically increment to the beginning
(wrap-around) of the address space, i.e. for 4Mbit density, once
The Read instruction is initiated by executing an 8-bit command,
03H, followed by address bits [A23 -A0]. CE must remain active
low for the duration of the Read cycle. See Figure 2 for the Read
sequence.
Figure 2: Read Sequence
Fast Read (50 MHz ~ 100 MHz)
The Fast Read instruction supporting up to 100 MHz is initiated
by executing an 8-bit command, 0BH, followed by address bits
all addresses until terminated by a low to high transition on CE .
The internal address pointer will automatically increment until the
highest memory address is reached. Once the highest memory
address is reached, the address pointer will automatically
increment to the beginning (wrap-around) of the address space,
i.e. for 4Mbit density, once the data from address location
7FFFFH has been read, the next output will be from address
location 000000H.
[A23 -A0] and a dummy byte. CE must remain active low for the
duration of the Fast Read cycle. See Figure 3 for the Fast Read
sequence.
Following a dummy byte (8 clocks input dummy cycle), the Fast
Read instruction outputs the data starting from the specified
address location. The data output stream is continuous through
CE
MODE3
SCK MODE0
0 1 2 3 4 5 6 7 8
ADD.
0B
SI
MSB
SO
15 16
23 24
ADD.
31 32
ADD.
39 40
47 48
55 56
63 64
71 72
80
X
MSB
HIGH IMPENANCE
N
N+1
N+2
N+3
N+4
DOUT
DOUT
DOUT
DOUT
DOUT
MSB
Note : X = Dummy Byte : 8 Clocks Input Dummy (VIL or VIH)
Figure 3: Fast Read Sequence
Elite Semiconductor Memory Technology Inc.
Publication Date: May 2009
Revision: 0.2
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(Preliminary)
F25S04PA
Fast Read Dual Output (50 MHz ~ 100 MHz)
The Fast Read Dual Output (3BH) instruction is similar to the
standard Fast Read (0BH) instruction except the data is output
on SI and SO pins. This allows data to be transferred from the
device at twice the rate of standard SPI devices. This instruction
is for quickly downloading code from Flash to RAM upon
power-up or for applications that cache code- segments to RAM
for execution.
The Fast Read Dual Output instruction is initiated by executing
an 8-bit command, 3BH, followed by address bits [A23 -A0] and a
dummy byte. CE must remain active low for the duration of the
Fast Read Dual Output cycle. See Figure 4 for the Fast Read
Dual Output sequence.
Figure 4: Fast Read Dual Output Sequence
Elite Semiconductor Memory Technology Inc.
Publication Date: May 2009
Revision: 0.2
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(Preliminary)
F25S04PA
Page Program (PP)
The Page Program instruction allows many bytes to be
programmed in the memory. The bytes must be in the erased
state (FFH) when initiating a Program operation. A Page
Program instruction applied to a protected memory area will be
ignored.
latched data are discarded and the last 256 bytes Data are
guaranteed to be programmed correctly within the same page. If
less than 256 bytes Data are sent to device, they are correctly
programmed at the requested addresses without having any
effects on the other bytes of the same page.
Prior to any Write operation, the Write Enable (WREN) instruction
CE must be driven high before the instruction is executed. The
user may poll the Busy bit in the software status register or wait
TPP for the completion of the internal self-timed Page Program
operation. While the Page Program cycle is in progress, the Read
Status Register instruction may still be accessed for checking the
status of the Busy bit. It is recommended to wait for a duration of
TBP before reading the status register to check the BUSY bit. The
BUSY bit is a 1 during the Page Program cycle and becomes a 0
when the cycle is finished and the device is ready to accept other
instructions again. After the Page Program cycle has finished, the
Write-Enable-Latch (WEL) bit in the Status Register is cleared to
0. See Figure 7 for the Page Program sequence.
must be executed. CE must remain active low for the duration
of the Page Program instruction. The Page Program instruction is
initiated by executing an 8-bit command, 02H, followed by
address bits [A23-A0]. Following the address, at least one byte
Data is input (the maximum of input data can be up to 256 bytes).
If the 8 least significant address bits [A7-A0] are not all zero, all
transmitted data that goes beyond the end of the current page
are programmed from the start address of the same page (from
the address whose 8 least significant bits [A7-A0] are all zero).
If more than 256 bytes Data are sent to the device, previously
Figure 7: Page Program Sequence
Elite Semiconductor Memory Technology Inc.
Publication Date: May 2009
Revision: 0.2
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(Preliminary)
F25S04PA
64K Byte Block Erase
The 64K-byte Block Erase instruction clears all bits in the
selected block to FFH. A Block Erase instruction applied to a
protected memory area will be ignored. Prior to any Write
operation, the Write Enable (WREN) instruction must be
-A0]. Address bits [AMS -A16] (AMS = Most Significant address) are
used to determine the block address (BAX), remaining address
bits can be VIL or VIH. CE must be driven high before the
instruction is executed. The user may poll the Busy bit in the
Software Status Register or wait TBE for the completion of the
internal self-timed Block Erase cycle. See Figure 8 for the Block
Erase sequence.
executed. CE must remain active low for the duration of the any
command sequence. The Block Erase instruction is initiated by
executing an 8-bit command, D8H, followed by address bits [A23
Figure 8: 64K-byte Block Erase Sequence
4K Byte Sector Erase
[AMS -A12] (AMS = Most Significant address) are used to determine
the sector address (SAX), remaining address bits can be VIL or
The Sector Erase instruction clears all bits in the selected sector
to FFH. A Sector Erase instruction applied to a protected memory
area will be ignored. Prior to any Write operation, the Write
VIH. CE must be driven high before the instruction is executed.
The user may poll the Busy bit in the Software Status Register or
wait TSE for the completion of the internal self-timed Sector Erase
cycle. See Figure 9 for the Sector Erase sequence.
Enable (WREN) instruction must be executed. CE must remain
active low for the duration of the any command sequence. The
Sector Erase instruction is initiated by executing an 8-bit
command, 20H, followed by address bits [A23 -A0]. Address bits
CE
MODE3
15 16
0 1 2 3 4 5 6 7 8
31
23 24
SCK MODE0
20
SI
MSB
SO
ADD.
ADD.
ADD.
MSB
HIGH IMPENANCE
Figure 9: 4K-byte Sector Erase Sequence
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ESMT
(Preliminary)
F25S04PA
Chip Erase
The Chip Erase instruction clears all bits in the device to FFH. A
Chip Erase instruction will be ignored if any of the memory area is
protected. Prior to any Write operation, the Write Enable (WREN)
instruction must be executed. CE must remain active low for
the duration of the Chip-Erase instruction sequence. The Chip
Erase instruction is initiated by executing an 8-bit command, 60H
or C7H. CE must be driven high before the instruction is
executed. The user may poll the Busy bit in the Software Status
Register or wait TCE for the completion of the internal self-timed
Chip Erase cycle. See Figure 10 for the Chip Erase sequence.
CE
MODE3
SCK MODE0
0 1 2 3 4 5 6 7
60 or C7
SI
MSB
SO
HIGH IMPENANCE
Figure 10: Chip Erase Sequence
Read Status Register (RDSR)
The Read Status Register (RDSR) instruction allows reading of
the status register. The status register may be read at any time
even during a Write (Program/Erase) operation.
When a Write operation is in progress, the Busy bit may be
checked before sending any new commands to assure that the
new commands are properly received by the device.
CE must be driven low before the RDSR instruction is entered
and remain low until the status data is read. Read Status
Register is continuous with ongoing clock cycles until it is
terminated by a low to high transition of the CE . See Figure 11
for the RDSR instruction sequence.
Figure 11: Read Status Register (RDSR) Sequence
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ESMT
(Preliminary)
F25S04PA
Write Enable (WREN)
The Write Enable (WREN) instruction sets the Write-EnableLatch bit in the Software Status Register to 1 allowing Write
operations to occur.
The WREN instruction must be executed prior to any Write
(Program/Erase) operation. CE must be driven high before the
WREN instruction is executed.
CE
0 1 2 3 4 5 6 7
MODE3
SCK MODE0
06
SI
MSB
HIGH IMPENANCE
SO
Figure 12: Write Enable (WREN) Sequence
Write Disable (WRDI)
The Write Disable (WRDI) instruction resets the Write-EnableLatch bit to 0 disabling any new Write operations from occurring.
CE must be driven high before the WRDI instruction is
executed.
CE
MODE3
SCK MODE0
0 1 2 3 4 5 6 7
04
SI
MSB
SO
Figure 13: Write Disable (WRDI) Sequence
Elite Semiconductor Memory Technology Inc.
HIGH IMPENANCE
CE
Publication Date: May 2009
Revision: 0.2
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ESMT
(Preliminary)
F25S04PA
Write-Status-Register (WRSR)
The Write Status Register instruction writes new values to the
BP2, BP1, BP0, and BPL bits of the status register. CE must be
driven low before the command sequence of the WRSR
instruction is entered and driven high before the WRSR
instruction is executed. See Figure 14 for WREN and WRSR
instruction sequences.
Executing the Write Status Register instruction will be ignored
when WP is low and BPL bit is set to “1”. When the WP is
low, the BPL bit can only be set from “0” to “1” to lock down the
status register, but cannot be reset from “1” to “0”.
When WP is high, the lock-down function of the BPL bit is
disabled and the BPL, TB, BP0, BP1,and BP2 bits in the status
register can all be changed. As long as BPL bit is set to 0 or WP
pin is driven high (VIH) prior to the low-to-high transition of the
CE pin at the end of the WRSR instruction, the bits in the status
register can all be altered by the WRSR instruction. In this case,
a single WRSR instruction can set the BPL bit to “1” to lock down
the status register as well as altering the TB, BP0; BP1 and BP2
bits at the same time. See Table 4 for a summary description of
WP and BPL functions.
CE
MODE3
SCK MODE0
0 1 2 3 4 5 6 7
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
Stauts Register
Da ta In
06
SI
01
MSB
SO
7 6 5 4 3 2 1 0
MSB
HIGH IMPENANCE
Figure 14: Write-Enable (WREN) and Write-Status-Register (WRSR)
Elite Semiconductor Memory Technology Inc.
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ESMT
(Preliminary)
F25S04PA
Deep Power Down (DP)
Once the device is in deep power down status, all instructions will
be ignored except the Release from Deep Power Down
instruction (RDP) and Read Electronic Signature instruction
(RES). The device always power-up in the normal operation with
the standby current (ISB1). See Figure 15 for the Deep Power
Down instruction.
The Deep Power Down instruction is for minimizing power
consumption (the standby current is reduced from ISB1 to ISB2.).
This instruction is initiated by executing an 8-bit command, B9H,
and then CE must be driven high. After CE is driven high, the
device will enter to deep power down within the duration of TDP.
CE
MODE3
0
1
2
3
4
5
6
SCK MODE0
7
T DP
B9
SI
MSB
Standard Current
Deep Power Down Current
(ISB2)
Figure 15: Deep Power Down Instruction
Release from Deep Power Down (RDP) and Read-Electronic-Signature (RES)
The Release form Deep Power Down and Read-ElectronicSignature instruction is a multi-purpose instruction.
The instruction can be used to release the device from the deep
power down status. This instruction is initiated by driving CE
low and executing an 8-bit command, ABH, and then drive CE
high. See Figure 16 for RDP instruction. Release from the deep
power down will take the duration of TRES1 before the device will
resume normal operation and other instructions are accepted.
CE must remain high during TRES1.
CE low and executing an 8-bit command, ABH, followed by 3
dummy bytes. The Electronic-Signature byte is then output from
the device. The Electronic-Signature can be read continuously
until CE go high. See Figure 17 for RES sequence. After
driving CE high, it must remain high during for the duration of
TRES2, and then the device will resume normal operation and
other instructions are accepted.
The instruction is executed while an Erase, Program or WRSR
cycle is in progress is ignored and has no effect on the cycle in
progress.
The instruction also can be used to read the 8-bit ElectronicSignature of the device on the SO pin. It is initiated by driving
Elite Semiconductor Memory Technology Inc.
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ESMT
(Preliminary)
F25S04PA
CE
MODE3
0
1
2
3
4
5
6
7
T RES1
SCK MODE0
AB
SI
MSB
HIGH IMPEDANCE
SO
Standby Current
Deep Power Down Current
(ISB2)
Figure 16: Release from Deep Power Down (RDP) Instruction
CE
MODE3
SCK MODE0
0
1
2
3
4
5
6
7
8
30
9
31
32
33
34
35
36
37
38
TRES2
SS
3 Dummy Bytes
SS
AB
SI
MSB
SO
HIGH IMPEDANCE
SS
Electronic-Signature Data Out
MSB
Deep Power Down Current
(ISB2)
Standby
Current
Figure 17: Read Electronic -Signature (RES) Sequence
Table 6: Electronic Signature Data
Command
Electronic Signature Data
RES
12H
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ESMT
(Preliminary)
F25S04PA
JEDEC Read-ID
The JEDEC Read-ID instruction identifies the device as
F25S04PA and the manufacturer as ESMT. The device
information can be read from executing the 8-bit command, 9FH.
Following the JEDEC Read-ID instruction, the 8-bit
manufacturer’s ID, 8CH, is output from the device. After that, a
16-bit device ID is shifted out on the SO pin. Byte1, 8CH,
identifies the manufacturer as ESMT. Byte2, 20H, identifies the
memory type as SPI Flash. Byte3, 13H, identifies the device as
F25S04PA. The instruction sequence is shown in Figure 18.
The JEDEC Read ID instruction is terminated by a low to high
transition on CE at any time during data output. If no other
command is issued after executing the JEDEC Read-ID
instruction, issue a 00H (NOP) command before going into
Standby Mode ( CE =VIH).
CE
MODE3
SCK MODE0
0 1 2 3 4 5 6 7 8 9 10 11 12 13 1415 1617 1819 2021 22 23 24 25 2627 2829 3031
9F
SI
MSB
SO
HIGH IMPENANCE
20
8C
MSB
13
MSB
MSB
Figure 18: JEDEC Read-ID Sequence
Table 7: JEDEC READ-ID Data
Manufacturer’s ID
(Byte 1)
8CH
Elite Semiconductor Memory Technology Inc.
Device ID
Memory Type
(Byte 2)
Memory Capacity
(Byte 3)
20H
13H
Publication Date: May 2009
Revision: 0.2
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ESMT
(Preliminary)
F25S04PA
Read-ID (RDID)
The Read-ID instruction (RDID) identifies the devices as F25
S04PA and manufacturer as ESMT. This command is backward
compatible to all ESMT SPI devices and should be used as
default device identification when multiple versions of ESMT SPI
devices are used in one design. The device information can be
read from executing an 8-bit command, 90H, followed by address
bits [A23 -A0]. Following the Read-ID instruction, the
manufacturer’s ID is located in address 00000H and the device
ID is located in address 00001H.
Once the device is in Read-ID mode, the manufacturer’s and
device ID output data toggles between address 00000H and
00001H until terminated by a low to high transition on CE .
CE
MODE3
SCK MODE0
15 16
0 1 2 3 4 5 6 7 8
90
SI
00
31 32
23 24
39 40
47 4 8
55 56
63
1
00
ADD
MSB
MSB
HIGH IMPENANCE
SO
8C
12
8C
12
HIGH
IMPENA NCE
MSB
Note: The Manufacture’s an d Device ID o utput stream i s continu ous until terminated by a low to high transition on CE.
1. 00H will output the Manufacture’s ID first a nd 01H will output Device ID first b efore toggling between the two. .
Figure 19: Read-ID Sequence
Table 8: Product ID Data
Address
00000H
00001H
Elite Semiconductor Memory Technology Inc.
Byte1
Byte2
8CH
12H
Manufacturer’s ID
Device ID
ESMT F25S04PA
12H
8CH
Device ID
ESMT F25S04PA
Manufacturer’s ID
Publication Date: May 2009
Revision: 0.2
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ESMT
„
(Preliminary)
F25S04PA
ELECTRICAL SPECIFICATIONS
Absolute Maximum Stress Ratings
(Applied conditions are greater than those listed under “Absolute Maximum Stress Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the
operational sections of this datasheet is not implied. Exposure to absolute maximum stress rating conditions may affect device
reliability.)
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C
D. C. Voltage on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to VDD+0.5V
Transient Voltage (<20 ns) on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -2.0V to VDD+2.0V
Package Power Dissipation Capability (TA = 25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W
Surface Mount Lead Soldering Temperature (3 Seconds) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240°C
Output Short Circuit Current (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
( Note 1: Output shorted for no more than one second. No more than one output shorted at a time. )
AC CONDITIONS OF TEST
Input Rise/Fall Time . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 ns
Output Load . . . . . . . . . . . . . . . . . . . . . . . . CL = 15 pF for ≧75MHz
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .CL = 30 pF for ≦50MHz
See Figures 28 and 29
OPERATING RANGE
Parameter
Symbol
Value
Unit
Operating Supply Voltage
VDD
2.3 ~ 3.3
V
Ambient Operating Temperature
TA
0 ~ 70
℃
Table 9: DC OPERATING CHARACTERISTICS
Symbol
Parameter
IDDW
Standard
Dual
Standard
Dual
Standard
Dual
Standard
Dual
Program and Erase Current
ISB1
Standby Current
ISB2
Deep Power Down Current
ILI
ILO
VIL
VIH
VOL
VOH
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
IDDR1
IDDR2
IDDR3
IDDR4
Min
Read Current
@33 MHz
Read Current
@ 50MHz
Read Current
@ 86MHz
Read Current
@ 100MHz
Limits
Max
3
4
6
8
10
12
20
25
15
5
-0.5
0.7 x VDD
Elite Semiconductor Memory Technology Inc.
VDD-0.2
5
±2
±2
0.3 x VDD
VDD +0.4
0.4
Test Condition
Unit
mA
CE =0.1 VDD/0.9 VDD, SO=open
mA
CE =0.1 VDD/0.9 VDD, SO=open
mA
CE =0.1 VDD/0.9 VDD, SO=open
mA
CE =0.1 VDD/0.9 VDD, SO=open
mA
CE =VDD
µA
CE =VDD, VIN =VDD or VSS
µA
CE =VDD, VIN =VDD or VSS
VIN=GND to VDD, VDD=VDD Max
VOUT=GND to VDD, VDD=VDD Max
VDD=VDD Min
VDD=VDD Max
IOL= 1.6mA, VDD=VDD Min
IOH=-100 µA, VDD=VDD Min
µA
µA
V
V
V
V
Publication Date: May 2009
Revision: 0.2
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ESMT
(Preliminary)
F25S04PA
Table 10: RECOMMENDED SYSTEM POWER-UP TIMINGS
Symbol
TPU-READ1
TPU-WRITE
1
Parameter
Minimum
Unit
VDD Min to Read Operation
10
µs
VDD Min to Write Operation
10
µs
Test Condition
Maximum
VOUT = 0V
8 pF
VIN = 0V
6 pF
Table 11: CAPACITANCE (TA = 25°C, f=1 MHz, other pins open)
Parameter
COUT
1
CIN1
Description
Output Pin Capacitance
Input Capacitance
Note 1: This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
Table 12: AC OPERATING CHARACTERISTICS
Normal 33MHz
Symbol
Fast 50 MHz
Fast 86 MHz
Min
Min
Fast 100 MHz
Parameter
Unit
Min
Max
Min
TSCKH2
Serial Clock High Time
13
9
5
4
ns
TSCKL2
Serial Clock Low Time
13
9
5
4
ns
TCLCH
Clock Rise Time (Slew Rate)
0.1
0.1
0.1
0.1
V/ns
TCHCL
Clock Fall Time (Slew Rate)
0.1
0.1
0.1
0.1
V/ns
CE Active Setup Time
5
5
5
5
ns
TCEH1
CE Active Hold Time
5
5
5
5
ns
TCHS1
CE Not Active Setup Time
5
5
5
5
ns
1
TCHH
CE Not Active Hold Time
5
5
5
5
ns
TCPH
CE High Time
100
100
100
100
ns
TCHZ
CE High to High-Z Output
TCLZ
SCK Low to Low-Z Output
0
0
0
0
ns
TDS
Data In Setup Time
2
2
2
2
ns
TDH
Data In Hold Time
5
5
5
5
ns
THLS
HOLD Low Setup Time
5
5
5
5
ns
THHS
HOLD High Setup Time
5
5
5
5
ns
Elite Semiconductor Memory Technology Inc.
6
86
Max
Serial Clock Frequency
TCES
50
Max
FCLK
1
33
Max
6
100
6
MHz
6
Publication Date: May 2009
Revision: 0.2
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ns
ESMT
(Preliminary)
F25S04PA
Table 12: AC OPERATING CHARACTERISTICS - Continued
Symbol
Normal 33MHz
Parameter
Min
Max
Fast 50 MHz
Fast 86 MHz
Min
Min
Max
Max
Fast 100 MHz
Min
Unit
Max
THLH
HOLD Low Hold Time
5
5
5
5
ns
THHH
HOLD High Hold Time
5
5
5
5
ns
THZ3
TLZ3
TOH
TV
TWHSL4
TSHWL4
TW
TDP3
HOLD Low to High-Z Output
6
6
6
6
ns
HOLD High to Low-Z Output
Output Hold from SCK Change
Output Valid from SCK
6
6
6
6
ns
ns
ns
ns
0
0
(typ.) 3
CE High to Deep Power Down Mode
TRES13
TRES23
0
8
20
8
20
8
20
100
15
3
100
15
3
100
15
3
100
15
3
ms
us
Write Protect Setup Time before CE Low
Write Protect Hold Time after CE High
Write Status Register Time
0
12
20
(typ.) 3
(typ.) 3
(typ.) 3
ns
CE High to Standby Mode ( for DP)
3
3
3
3
us
CE High to Standby Mode (for RES)
1.8
1.8
1.8
1.8
us
Note:
1. Relative to SCK.
2. TSCKH + TSCKL must be less than or equal to 1/ FCLK.
3. Value guaranteed by characterization, not 100% tested in production.
4. Only applicable as a constraint for a Write status Register instruction when Block- Protection-Look (BPL) bit is set at 1.
ERASE AND PROGRAMMING PERFORMANCE
Parameter
Limit
Symbol
Typ
2
Max3
Unit
Sector Erase Time
TSE
40
100
ms
Block Erase Time
TBE
0.4
2
s
Chip Erase Time
TCE
3
7
s
Byte Programming Time
TBP
7
10
us
Page Programming Time
TPP
0.8
3
ms
Chip Programming Time
3
5
s
Erase/Program Cycles1
100,000
-
Cycles
20
-
Years
Data Retention
Notes:
1. Not 100% Tested, Excludes external system level over head.
2. Typical values measured at 25°C, 2.5V.
3. Maximum values measured at 85°C, 2.3V.
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ESMT
(Preliminary)
F25S04PA
Figure 20: Serial Input Timing Diagram
Figure 21: Serial Output Timing Diagram
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(Preliminary)
F25S04PA
Figure 22: HOLD Timing Diagram
WP
T WHSL
TSHWL
CE
SCK
SI
HIGH IMPENANCE
SO
Figure 23: Write Protect setup and hold timing during WRSR when SRWD = 1
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(Preliminary)
F25S04PA
VCC
VCC (max)
Program, Erase and Write command is ignored
CE must track VCC
VCC (min)
TVSL
Reset
State
Read command
is allowed
Device is fully
accessible
VWI
TPUW
Time
Figure 24: Power-Up Timing Diagram
Table 13: Power-Up Timing and VWI Threshold
Parameter
Max.
Unit
Symbol
Min.
VCC(min) to CE low
TVSL
10
Time Delay before Write instruction
TPUW
1
10
ms
VWI
1
2
V
Write Inhibit Threshold Voltage
us
Note: These parameters are characterized only.
Elite Semiconductor Memory Technology Inc.
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ESMT
(Preliminary)
Input timing reference level
F25S04PA
Output timing reference level
0.8VCC
0.7VCC
0.3VCC
0.2VCC
AC
Measurement
Level
0.5VCC
Note : Input pulse rise and fall time are <5ns
Figure 25: AC Input/Output Reference Waveforms
Figure 26: A Teat Load Example
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ESMT
(Preliminary)
F25S04PA
PACKAGING DIAGRAMS
8-LEAD
SOIC ( 150 mil )
5
GAUGE PLANE
0
0.25
H
E
8
L
DETAIL "X"
1
4
e
b
L1
"X"
A1
A2
A
C
D
SEATING PLANE
Dimension in mm
Dimension in inch
Dimension in mm
Symbol
Dimension in inch
Symbol
Min
Norm
Max
Min
Norm
Max
Min
Norm
Max
Min
Norm
Max
A
1.35
1.60
1.75
0.053
0.063
0.069
D
4.80
4.90
5.00
0.189
0.193
0.197
A1
0.10
0.15
0.25
0.004
0.006
0.010
E
3.80
3.90
4.00
0.150
0.154
0.157
A2
1.25
1.45
1.55
0.049
0.057
0.061
L
0.40
0.66
1.27
0.016
0.026
0.050
b
0.33
0.406
0.51
0.013
0.016
0.020
e
c
0.19
0.203
0.25
0.0075
0.008
0.010
L1
1.00
1.05
1.10
0.039
0.041
0.043
H
5.80
6.00
6.20
0.228
0.236
0.244
θ
0°
---
8°
0°
---
8°
1.27 BSC
0.050 BSC
Controlling dimension : millimenter
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ESMT
(Preliminary)
F25S04PA
PACKING DIMENSIONS
8-LEAD SOIC 200 mil ( official name – 209 mil )
5
1
4
E1
8
E
θ
b
e
A
A2
D
L
A1
L1
SEATING PLANE
Dimension in mm
Dimension in inch
DETAIL "X"
Dimension in mm
Symbol
Dimension in inch
Symbol
Min
Norm
Max
Min
Norm
Max
Min
Norm
Max
Min
Norm
Max
A
---
---
2.16
---
---
0.085
E
7.70
7.90
8.10
0.303
0.311
0.319
A1
0.05
0.15
0.25
0.002
0.006
0.010
E1
5.18
5.28
5.38
0.204
0.208
0.212
A2
1.70
1.80
1.91
0.067
0.071
0.075
L
0.50
0.65
0.80
0.020
0.026
0.032
b
0.36
0.41
0.51
0.014
0.016
0.020
e
c
0.19
0.20
0.25
0.007
0.008
0.010
L1
1.27
1.37
1.47
0.050
0.054
0.058
D
5.13
5.23
5.33
0.202
0.206
0.210
θ
0°
---
8°
0°
---
8°
1.27 BSC
0.050 BSC
Controlling dimension : millimenter
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ESMT
(Preliminary)
F25S04PA
PACKING
DIMENSIONS
8-LEAD P-DIP ( 300 mil )
D
8
5
E
A
eB
E1
1
A2
0
4
b
L
A1
S e a t in g P la n e
b
1
e
Dimension in mm
Symbol
Min
Norm
A
Dimension in inch
Max
Min
Norm
Max
5.00
0.21
A1
0.38
A2
3.18
3.30
3.43
0.125
0.130
0.135
D
9.02
9.27
10.16
0.355
0.365
0.400
E
0.015
7.62 BSC.
0.300 BSC.
E1
6.22
6.35
6.48
0.245
0.250
0.255
L
9.02
9.27
10.16
0.115
0.130
0.150
e
eB
2.54 TYP.
8.51
b
θ
9.53
0.335
0.46 TYP.
b1
O
9.02
0.100 TYP.
0
7
O
0.375
0.018 TYP.
1.52 TYP.
O
0.355
0.060 TYP.
15
O
0
O
7O
15O
Controlling dimension : Inch.
Elite Semiconductor Memory Technology Inc.
Publication Date: May 2009
Revision: 0.2
31/34
ESMT
PACKING
8-LEAD
(Preliminary)
F25S04PA
DIMENSIONS
DFN ( 5x6 mm )
D
E
A
PIN# 1
A1
L
DETAIL : "B"
"A"
E2
b
e
D2
DETAIL : "A"
"B"
PIN# 1
Symbol
A
A1
b
D
D2
E
E2
e
L
Dimension in inch
Min
Norm
Max
0.028
0.030
0.031
0.000
0.001
0.002
0.014
0.016
0.018
0.232
0.236
0.240
--0.161
0.193
0.197
0.201
--0.161
0.050 BSC
0.022
0.024
0.026
Dimension in mm
Min
Norm
Max
0.70
0.75
0.80
0.00
0.02
0.05
0.35
0.40
0.45
5.90
6.00
6.10
--4.10
4.90
5.00
5.10
--4.10
1.27 BSC
0.55
0.60
0.65
Controlling dimension : millimeter
Elite Semiconductor Memory Technology Inc.
Publication Date: May 2009
Revision: 0.2
32/34
ESMT
(Preliminary)
F25S04PA
Revision History
Revision
Date
0.1
2009.02.20
Original
0.2
2009.05.14
1. Add DFN package
2. Modify the test condition of VOL
Elite Semiconductor Memory Technology Inc.
Description
Publication Date: May 2009
Revision: 0.2
33/34
ESMT
(Preliminary)
F25S04PA
Important Notice
All rights reserved.
No part of this document may be reproduced or duplicated in any form or
by any means without the prior permission of ESMT.
The contents contained in this document are believed to be accurate at
the time of publication. ESMT assumes no responsibility for any error in
this document, and reserves the right to change the products or
specification in this document without notice.
The information contained herein is presented only as a guide or
examples for the application of our products. No responsibility is
assumed by ESMT for any infringement of patents, copyrights, or other
intellectual property rights of third parties which may result from its use.
No license, either express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of ESMT or
others.
Any semiconductor devices may have inherently a certain rate of failure.
To minimize risks associated with customer's application, adequate
design and operating safeguards against injury, damage, or loss from
such failure, should be provided by the customer when making
application designs.
ESMT's products are not authorized for use in critical applications such
as, but not limited to, life support devices or system, where failure or
abnormal operation may directly affect human lives or cause physical
injury or property damage. If products described here are to be used for
such kinds of application, purchaser must do its own quality assurance
testing appropriate to such applications.
Elite Semiconductor Memory Technology Inc.
Publication Date: May 2009
Revision: 0.2
34/34