Excelics EIA/EIB1718A-1P PRELIMINARY DATA SHEET 17.3-18.1GHz, 1W Internally Matched Power FET • • • • • • 17.3-18.1GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE( 25% TYPICAL) EIB FEATURES HIGH IP3(43dBm TYPICAL) +30.5/+29.5dBm TYPICAL P1dB OUTPUT POWER FOR EIA/EIB 7.5/6.0dB TYPICAL G1dB POWER GAIN FOR EIA/EIB NON-HERMETIC METAL FLANGE PACKAGE ELECTRICAL CHARACTERISTICS (Ta = 25 OC) EIA1718A-1P SYMBOLS PARAMETERS/TEST CONDITIONS P1dB MIN TYP Output Power at 1dB Compression f=17.3-18.1GHz Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB) 29 G1dB Gain at 1dB Compression f=17.3-18.1GHz Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB) 6.5 PAE Power Added Efficiency at 1dB compression f=17.3-18.1GHz Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB) Id1dB Drain Current at 1dB Compression EIB1718A-1P MAX MAX UNIT MIN TYP 30.5 29.0 29.5 dBm 7.5 5.5 6.0 dB 30 25 % 440 425 mA 37 43* dBm rd IP3 Output 3 Order Intercept Point f=17.3-18.1GHz Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB) Idss Saturated Drain Current Vds=3V, Vgs=0V Gm Transconductance Vds=3V, Vgs=0V 760 Vp Pinch-off Voltage Vds=3V, Ids=6mA -1.0 BVgd Drain Breakdown Voltage Igd=2.4mA 550 720 -13 Thermal Resistance (Au-Sn Eutectic Attach) Rth *Typical –45dBc IM3 at Pout=20dBm/Tone 850 550 720 850 360 -2.5 -2.0 -15 -15 16 16 mS -3.5 MAXIMUM RATINGS AT 25OC SYMBOLS PARAMETERS ABSOLUTE1 CONTINUOUS2 Vds Drain-Source Voltage 12V Vgs Gate-Source Voltage -8V -3V Ids Drain Current Idss Idss Igsf Forward Gate Current 90mA 15mA Pin Input Power 32dBm @ 3dB Compression Tch Channel Temperature 175oC 150oC Tstg Pt Storage Temperature Total Power Dissipation mA 8V o -65/175 C 8.5 -65/150oC 7.1W Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054 Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com V V o C/W