EIC0910-5 ISSUED DATE: 04-19-04 EIC0910-5 Excelics • • • • 9.50-10.50 GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM HIGH PAE: 30% TYPICAL +37.5 dBm TYPICAL P1dB OUTPUT POWER 7dB TYPICAL G1dB POWER GAIN HERMETIC METAL FLANGE PACKAGE YM • SN 9.50-10.50GHz, 5W Internally Matched Power FET ELECTRICAL CHARACTERISTICS (Ta = 25 OC) EIC0910-5 SYMBOLS PARAMETERS/TEST CONDITIONS MIN TYP MAX UNIT P1dB Output Power at 1dB Compression f=9.5-10.5GHz, Vds=10V, Idsq=1600mA 36.5 37.5 dBm G1dB Gain at 1dB Compression f=9.5-10.5GHz, Vds=10V, Idsq=1600mA 6 7 dB PAE Gain Flatness f = 9.5-10.5GHz, Vds = 10 V, Idsq = 1600mA Power Added Efficiency at 1dB compression f=9.5-10.5GHz, Vds=10V, Idsq=1600mA Id1dB Drain Current at 1dB Compression IM3 Output 3rd Order Intermodulation Distortion f=10.5GHz ∆f=10MHz 2-Tone Test. Pout=26.5 dBm S.C.L Ids @ 65% Idss Idss Saturated Drain Current Vds=3V, Vgs=0V 2900 3500 mA Vp Pinch-off Voltage Vds=3V, Ids=30mA -2.5 -4 V Rth Thermal Resistance (Au-Sn Eutectic Attach) 5.0 5.5 ∆G ±0.6 dB 30 1700 % 1900 mA dBc -43 -46 o C/W ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION AT 25°C SYMBOLS PARAMETERS CONTINUOUS1,2 Vds Drain-Source Voltage 10V Vgs Gate-Source Voltage -4.5V Ids Drain Current Idss Igsf Forward Gate Current 60mA Pin Input Power @ 3dB Compression Tch Channel Temperature 150 oC Tstg Storage Temperature -65 to +150 oC Pt Total Power Dissipation 23W Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com