Excelics EIA5060-1S TENTATIVE DATA SHEET 5.0-6.0GHz, 1W Internally Matched Power FET • • • • • 5.0-6.0GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM FEATURES HIGH PAE(35% TYPICAL) 31.0dBm TYPICAL P1dB OUTPUT POWER 13dB TYPICAL G1dB POWER GAIN NON-HERMETIC 180 MIL METAL FLANGE PACKAGE ELECTRICAL CHARACTERISTICS (Ta = 25 O C) EIA0506-1P180F SYMBOLS PARAMETERS/TEST CONDITIONS UNIT MIN TYP MAX 29.5 31.0 dBm 11 13 dB P1dB Output Power at 1dB Compression f=5.0-6.0GHz Vds=8V, Idsq=0.5 Idss G1dB Gain at 1dB Compression Vds=8V, Idsq=0.5 Idss PAE Power Added Efficiency at 1dB compression f=5.06.0GHz Vds=8V, Idsq=0.5 Idss 35 % Id1dB Drain Current at 1dB Compression 440 mA 37 dBm f=5.0-6.0GHz rd IP3 Output 3 Order Intercept Point Vds=8V, Idsq=0.5 Idss f=5.0-6.0GHz Idss Saturated Drain Current Vds=3V, Vgs=0V Gm Transconductance Vds=3V, Vgs=0V 760 Vp Pinch-off Voltage Vds=3V, Ids=6mA -1.0 BVgd Drain Breakdown Voltage Igd=4.8mA Rth Thermal Resistance (Au-Sn Eutectic Attach) 550 720 -13 850 mA mS -2.5 V -15 V o 16 MAXIMUM RATINGS AT 25OC SYMBOLS PARAMETERS ABSOLUTE1 CONTINUOUS2 Vds Drain-Source Voltage 12V 8V Vgs Gate-Source Voltage -8V -3V Idss Ids Drain Current Idss Igsf Forward Gate Current 90mA 15mA Pin Input Power 29dBm @ 3dB Compression Tch Channel Temperature 175oC 150oC Tstg Pt o Storage Temperature -65/175 C -65/150oC Total Power Dissipation 8.5W 7.1W Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054 Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com C/W