ETC EFA025AL

Excelics
EFA025AL
DATA SHEET
High Gain GaAs Power FET
•
•
•
•
•
•
420
+20.0dBm TYPICAL OUTPUT POWER
11.5dB TYPICAL POWER GAIN AT 12GHz
0.3 X 250 MICRON RECESSED “MUSHROOM” GATE
Si3N4 PASSIVATION
ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
Idss SORTED IN 5mA PER BIN RANGE
50
D
P1dB
G1dB
PAE
PARAMETERS/TEST CONDITIONS
Output Power at 1dB Compression
f=12GHz
Vds=8V, Ids=50% Idss
f=18GHz
Gain at 1dB Compression
f=12GHz
Vds=8V, Ids=50% Idss
f=18GHz
Power Added efficiency at 1dB Compression
Vds=8V, Ids=50% Idss
f=12GHz
D
48
260
S
40
59
G
G
90
S
50 78
Chip Thickness: 75 ± 13 microns
All Dimensions In Microns
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
SYMBOLS
104
MIN
TYP
17.0
20.0
20.0
11.5
9.0
9.5
MAX
UNIT
dBm
dB
%
38
Idss
Saturated Drain Current
Vds=3V, Vgs=0V
20
45
Gm
Transconductance
Vds=3V, Vgs=0V
30
50
Vp
Pinch-off Voltage
Vds=3V, Ids=1.0mA
BVgd
Drain Breakdown Voltage Igd=1.0mA
-12
-15
V
BVgs
Source Breakdown Voltage Igs=1.0mA
-7
-14
V
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
-1.5
65
mS
-2.5
155
MAXIMUM RATINGS AT 25OC
SYMBOLS
PARAMETERS
ABSOLUTE1
mA
CONTINUOUS2
Drain-Source Voltage
12V
8V
Vds
Gate-Source Voltage
-8V
-4V
Vgs
Drain Current
Idss
Idss
Ids
Forward Gate Current
6mA
1mA
Igsf
Input Power
19dBm
@ 3dB Compression
Pin
o
Channel Temperature
175 C
150oC
Tch
o
Storage Temperature
-65/175 C
-65/150oC
Tstg
Total Power Dissipation
880mW
730mW
Pt
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
V
o
C/W
EFA025AL
DATA SHEET
High Gain GaAs Power FET
S-PARAMETERS
FREQ
(GHz)
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
19.0
20.0
21.0
22.0
23.0
24.0
25.0
26.0
Note:
--- S11 --MAG ANG
0.990 -19.8
0.970 -38.4
0.927 -55.0
0.895 -69.0
0.862 -81.3
0.838 -91.8
0.815 -101.4
0.802 -110.2
0.779 -118.3
0.769 -125.4
0.765 -132.3
0.764 -139.0
0.769 -144.9
0.771 -150.5
0.779 -155.4
0.781 -159.8
0.786 -163.1
0.793 -166.7
0.794 -170.0
0.786 -173.1
0.773 -175.2
0.762 -177.7
0.763 -179.9
0.762 176.7
0.759 173.1
0.753 170.5
8V, 1/2 Idss
--- S21 ----- S12 --MAG ANG
MAG ANG
5.439 163.7
0.014
78.3
5.095 150.4
0.027
68.7
4.719 137.3
0.037
58.7
4.328 126.3
0.043
52.7
3.961 116.0
0.049
45.8
3.630 107.0
0.051
41.8
3.327
98.8
0.054
37.2
3.078
90.9
0.055
33.0
2.822
83.7
0.056
28.4
2.613
77.3
0.053
25.0
2.436
71.1
0.052
23.8
2.285
64.8
0.051
22.4
2.150
58.9
0.051
20.1
2.032
53.3
0.050
19.7
1.945
47.5
0.051
20.2
1.852
41.3
0.053
20.5
1.783
35.8
0.056
19.3
1.732
29.6
0.061
17.0
1.674
22.7
0.063
16.1
1.607
15.7
0.067
14.6
1.505
9.1
0.070
12.7
1.437
3.0
0.071
13.3
1.368
-2.4
0.076
16.5
1.305
-8.5
0.083
16.6
1.235 -14.3
0.088
16.8
1.168 -18.0
0.092
17.9
--- S22 --MAG
ANG
0.787
-7.4
0.772
-14.1
0.751
-20.6
0.727
-26.3
0.709
-32.1
0.692
-37.1
0.681
-42.0
0.675
-46.6
0.663
-51.0
0.655
-54.8
0.651
-58.5
0.645
-62.0
0.636
-65.3
0.628
-69.1
0.619
-73.7
0.614
-79.6
0.593
-86.9
0.580
-95.4
0.577 -105.2
0.582 -116.6
0.590 -128.3
0.604 -138.3
0.637 -146.1
0.678 -153.2
0.703 -158.7
0.721 -161.8
The data included 0.7 mils diameter Au bonding wires:
2 gate wires, 15 mils each; 2 drain wires, 20 mils each; 4 source wires, 7 mils each.