EMP311 21.0 – 24.0 GHz Power Amplifier MMIC ISSUED DATE: 09-10-04 FEATURES • • • • 21.0 – 24.0 GHz Operating Frequency Range 26.5dBm Output Power at 1dB Compression 14.0 dB Typical Small Signal Gain -40dBc OIMD3 @Each Tone Pout 16.5dBm Dimension: 1130um X 2250um Thickness: 75um ± 13um APPLICATIONS • • Point-to-point and point-to-multipoint radio Military Radar Systems Caution! ESD sensitive device. ELECTRICAL CHARACTERISTICS (Ta = 25 °C, 50 ohm, VDD=7V, IDQ=380mA) SYMBOL F P1dB Gss OIMD3 Input RL Output RL PARAMETER/TEST CONDITIONS MIN TYP MAX UNITS 24.0 GHz Operating Frequency Range 21.0 Output Power at 1dB Gain Compression 25.0 26.5 dBm Small Signal Gain Output 3rd Order Intermodulation Distortion @∆f=10MHz, Each Tone Pout 16.5dBm 11.0 14.0 dB -40 -37 dBc Input Return Loss -10 -8 dB Output Return Loss -8 -6 dB 536 644 mA 8 V Idss Saturate Drain Current VDS =3V, VGS =0V VDD Power Supply Voltage 7 Rth Thermal Resistance (Au-Sn Eutectic Attach) 18 Tb Operating Base Plate Temperature 429 -35 o C/W +85 ºC ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION1,2 SYMBOL CHARACTERISTIC VALUE VDS Drain to Source Voltage 8V VGS Gate to Source Voltage -4 V IDD Drain Current Idss IGSF Forward Gate Current PIN Input Power TCH Channel Temperature 150°C TSTG Storage Temperature -65/150°C PT 7.5mA @ 3dB compression Total Power Dissipation 6.3W 1. Operating the device beyond any of the above rating may result in permanent damage. 2. Bias conditions must also satisfy the following equation VDS*IDS < (TCH –THS)/RTH; where THS = ambient temperature Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 page 1 of 2 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com Revised September 2004 EMP311 PRELIMINARY DATA SHEET 21.0 – 24.0 GHz Power Amplifier MMIC ASSEMBLY DRAWING The length of RF wires should be as short as possible. Use at least two wires between RF pad and 50 ohm line and separate the wires to minimize the mutual inductance. CHIP OUTLINE Chip size 1130 X 2250 microns Chip Thickness: 75±13 microns PAD Dimensions: 100 x 100 microns All Dimensions in Microns Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 page 2 of 2 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com Revised September 2004