EMP214 12.50 – 15.50 GHz Power Amplifier MMIC UPDATED 05/08/2008 FEATURES • • • • 12.5 – 15.5 GHz Operating Frequency Range 29.5dBm Output Power at 1dB Compression 16.0 dB Typical Small Signal Gain -42dBc OIMD3 @Each Tone Pout 18.5dBm APPLICATIONS • • Dimension: 2650um X 2140um Thickness: 85um ± 15um Point-to-point and point-to-multipoint radio Military Radar Systems Caution! ESD sensitive device. ELECTRICAL CHARACTERISTICS (Ta = 25 °C, 50 ohm, VDD=7V, IDQ=750mA) SYMBOL F P1dB Gss OIMD3 Input RL Output RL PARAMETER/TEST CONDITIONS Operating Frequency Range MIN TYP MAX EMP214 12.5 15.5 EMP214H 13.5 15.5 EMP214L 12.5 14.5 UNITS GHz Output Power at 1dB Gain Compression 28.5 29.5 dBm Small Signal Gain Output 3rd Order Intermodulation Distortion @∆f=10MHz, Each Tone Pout 18.5dBm Ids=60%±10%Idss 13.0 16.0 dB -42 -39 dBc Input Return Loss -15 -10 dB Output Return Loss -15 -10 dB 1150 1380 mA Idss Saturate Drain Current VDS =3V, VGS =0V VDD Power Supply Voltage 920 7 Rth Thermal Resistance (Au-Sn Eutectic Attach) Tb Operating Base Plate Temperature V o 11 -35 C/W +85 ºC MAXIMUM RATINGS AT 25°C1,2 SYMBOL CHARACTERISTIC ABSOLUTE CONTINUOUS VDS Drain to Source Voltage 12 V 8V VGS Gate to Source Voltage -8 V -4 V IDD Drain Current Idss 1300mA IGSF Forward Gate Current 114mA 19mA PIN Input Power 27dBm @ 3dB compression TCH Channel Temperature 175°C 150°C TSTG Storage Temperature -65/175°C -65/150°C 12.4W 10.4W PT Total Power Dissipation 1. Operating the device beyond any of the above rating may result in permanent damage. 2. Bias conditions must also satisfy the following equation VDS*IDS < (TCH –THS)/RTH; where THS = Base Plate temperature Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 1 of 3 Revised May 2008 EMP214 UPDATED 05/08/2008 12.50 – 15.50 GHz Power Amplifier MMIC ASSEMBLY DRAWING The length of RF wires should be as short as possible. Use at least two wires between RF pad and 50 ohm line and separate the wires to minimize the mutual inductance. CHIP OUTLINE Chip Size 2140 x 2650 microns Chip Thickness: 85 ± 15 microns PAD Dimensions: 100 x 100 microns All Dimensions in Microns Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 2 of 3 Revised May 2008 EMP214 12.50 – 15.50 GHz Power Amplifier MMIC UPDATED 05/08/2008 ORDERING INFORMATION Notes: Part Number Frequency (GHz) EMP214 12.50-15.50 GHz EMP214H 13.50-15.50 GHz EMP214L 12.50-14.50 GHz Contact factory for military and hi-rel grades. DISCLAIMER EXCELICS SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. EXCELICS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN. LIFE SUPPORT POLICY EXCELICS SEMICONDUCTOR PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF EXCELICS SEMICONDUCTOR, INC. AS HERE IN: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 3 of 3 Revised May 2008