EMR101_A DC – 26GHz VOLTAGE VARIABLE ATTENUATOR MMIC FEATURES • • • • Broadband Performance: DC-26GHz Wide Attenuation Range: 25dB Low Insertion Loss: 2.5dB Good Return Loss: 10dB APPLICATIONS • Point-to-point and point-to-multipoint radio ELECTRICAL CHARACTERISTICS (Ta = 25 °C) PARAMETERS/TEST CONDITIONS Operating Frequency Range Input Power at 1dB Compression Input Power at 0.25dB Compression Minimum Attenuation Maximum Attenuation Return Loss MIN DC 6 -5 (DC - 8GHz) (8 - 26GHz) (DC – 8GHz) (8 - 26GHz) @min. attenuation @max. attenuation 10 10 TYP 8 -2 1.5 2.5 25 30 15 12 MAX 26 2.5 3.5 30 35 ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION1,2 RF Input Power Control Voltage Storage Temperature Operating Temperature 1. +16dBm +1.0 to -8 Volts -65 to 150 deg C -55 to +125 deg C Operating the device beyond any of the above rating may result in permanent damage. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com UNIT GHz dBm dBm dB dB dB dB dB dB EMR101_A DC – 26GHz VOLTAGE VARIABLE ATTENUATOR MMIC INSERTION LOSS ATTENUATION RANGE -26 0.0 Attenuation (dB) Attenuation (dB) -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -28 -30 -32 -3.5 -4.0 -34 0 5 10 15 20 25 30 0 5 10 15 freq, GHz RETURN LOSS 25 30 RELATIVE ATTENUATION -10 0 Min. Attenuation -20 Max. Attenuation Attenuation (dB) Return Loss (dB) -15 -25 -30 -10 -20 -30 -40 0 5 10 15 20 25 30 0 5 10 freq, GHz 15 20 25 30 freq, GHz RELATIVE ATTENUATION VS. CONTROL VOLTAGE @2GHz RELATIVE PHASE 200 Relative Phase (DEG) 30 25 At t enuat i on, dB 20 freq, GHz 20 15 10 5 3dB 100 18dB 0 30dB -100 -200 0 0 0. 5 1 1. 5 2 2. 5 0 5 10 15 20 25 Cont r ol Vol t age, - V freq, GHz Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com 30 EMR101_A DC – 26GHz VOLTAGE VARIABLE ATTENUATOR MMIC Input Power at 1dB and 0.25dB Compression VS. Attenuation I nput Power , dBm 20 Pi n- 0. 25 Pi n- 1 15 10 5 0 -5 0 2 4 6 8 At t enuat i on, dB 10 12 Pout and Attenuation VS. Pin at High Attenuation Setting At t enuat i on, dB 0 -5 - 10 At t enuat i on Pout - 15 - 20 - 25 - 30 - 10 -5 0 5 10 15 Pi n, dBm Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com EMR101_A DC – 26GHz VOLTAGE VARIABLE ATTENUATOR MMIC Outline Drawing All dimensions in microns Bond pads are 100microns by 100microns Die thickness is 75±13 microns Backside metallization: GOLD Bond pads metallization: GOLD On Chip DC Conversion Circuit R R11 R=50 Ohm R R12 R=50 Ohm RFIN RFOUT R R19 FET IN3 R R18 FET OUT3 R R20 FET Shunt3 R R14 R=500 Ohm R R21 R=500 Ohm R R13 R=1000 Ohm R R15 On chip DC conversion circuit maintains impedance match while attenuation is varied. Apply +6V to V+ and -6V to V-. Input control voltage which will be applied to VC ranges from 0V (max. attenuation) to -4V (min. attenuation). FET Shunt2 V+ VC V- Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com