Product Data Sheet 6 - 18 GHz Phase Shifter TGP6336-EEU Key Features and Performance • • • • • • 6 to 18 GHz Frequency Range 5-Bit Phase Shifter On-Chip CMOS-Compatible Drivers 9 dB Typical Insertion Loss at Midband 2:1 Typical Input SWR: 2.6:1 Typical Output SWR 3.556 x 2.540 x 0.1016 mm (0.140 x 0.100 x 0.004 in.) Description The TriQuint TGP6336-EEU is a GaAs MMIC 5-bit phase shifter which operates from 6 to 18 GHz. Phase can be shifted from 0 to 348.75 degrees in 11.25 degree steps. Control bias voltages are 0 and 5 V. The insertion loss is typically 9 dB. The TGP6336-EEU features on-chip CMOS-compatible drivers. The FET based phase shifter offers wide band performance and small size for use in T/R modules for EW applications. Bond pad and backside metallization is gold plated for compatibility with eutectic alloy attach methods as well as thermocompression and thermosonic wire-bonding processes. Ground is provided to the circuitry through vias to the backside metallization. TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com 1 Product Data Sheet TGP6336-EEU TYPICAL RELATIVE PHASE TYPICAL INSERTION LOSS TYPICAL INPUT RETURN LOSS TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com 2 Product Data Sheet TGP6336-EEU TYPICAL OUTPUT RETURN LOSS ABSOLUTE MAXIMUM RATINGS Positive supply voltage, V+………………………………………………………………………………….. 8 V Positive supply voltage range w ith respect to negative supply voltage, V+ - V-………………………. 0 V to 12 V Negative supply voltage range, V-………………………………………………………………………….. 0 V to -6 V Input continuous w ave pow er, PIN……………………………………………………………………………1 W Control voltage range, SHF 90, SHF180, SHF11.25, SHF 22.5, SHF 45……………………………….. 0 V to V+ Operating Channel temperature, TCH *.………………………………………………………………………150oC Mounting temperature (30 sec.), TM………………………………………………………………………….320oC Storage temperature range, TSTG…………………………………………………………………………….-65 to 150oC Ratings over operating channel temperature range, TCH (unless otherw ise noted). Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "RF Characteristics" is not implied. Exposure to absolute maximum rated conditions for extended periods may affect device reliability. * Operating channel temperature (TCH) w ill directly affect the device MTTF. For maximum life, it is recommended that channel temperature be maintained at the low est possible level. TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com 3 Product Data Sheet TGP6336-EEU BIAS TRUTH TABLE RELATIVE SHF 180 SHF 90 SHF 45 SHF 22.5 SHF 11.25 PHASE SHIFT (Bond pad #10) (Bond pad #11 (Bond pad #7) (Bond pad #8) (Bond pad #9) (degrees) 0.00 5 5 5 5 5 -11.25 5 5 5 5 0 -22.50 5 5 5 0 5 -33.75 5 5 5 0 0 -45.00 5 5 0 5 5 -56.25 5 5 0 5 0 -67.50 5 5 0 0 5 -78.75 5 5 0 0 0 -90.00 5 0 5 5 5 -101.25 5 0 5 5 0 -112.50 5 0 5 0 5 -123.75 5 0 5 0 0 -135.00 5 0 0 5 5 -146.25 5 0 0 5 0 -157.50 5 0 0 0 5 -168.75 5 0 0 0 0 -180.00 0 5 5 5 5 -191.25 0 5 5 5 0 -202.50 0 5 5 0 5 -213.75 0 5 5 0 0 -225.00 0 5 0 5 5 -236.25 0 5 0 5 0 -247.50 0 5 0 0 5 -258.75 0 5 0 0 0 -270.00 0 0 5 5 5 -281.25 0 0 5 5 0 -292.50 0 0 5 0 5 -303.75 0 0 5 0 0 -315.00 0 0 0 5 5 -326.25 0 0 0 5 0 -337.50 0 0 0 0 5 -348.75 0 0 0 0 0 V+ = 6 V, V- = -5 V, TA = 25oC TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com 4 Product Data Sheet TGP6336-EEU RF CHARACTERISTICS PARAMETER TEST CONDITIONS TYP UNIT 9 dB f = 6 - 18 GHz (all states) 2.0:1 - f = 6 - 18 GHz (all states) 2.6:1 - IL Insertion loss (all states) f = 6 - 18 GHz SWR(in) Input standing w ave ratio SWR(out) Output standing w ave ratio P1dB(in) Input pow er at 1–dB gain compression PHASE see next table TYPICAL RELATIVE PHASE SHIFT TYPICAL INPUT POWER at SHIFT (degrees) at 6GHz (degrees) at 12GHz (degrees) at 18GHz (degrees) 1–dB GAIN COMPRESSION at -11.25 -13±2 -13.5±2 13±4 26 -22.5 -45 -90 -180 -348.75 -23±2 -55±4 -107±5 -214±4 -416±8 -23±2 -43±3 -84±7 -165±8 -326±9 32±4 58±7 99±8 186±16 380±11 27 26 25 25 25 MIDBAND(dBm) V+ = 6 V, V- = -5 V, TA = 25oC RECOMMENDED BIAS NETWORK All bias resistors have a nominal value of 25-Ohms. RF connections: Bond one 1-mil diameter, 20 to 25-mil-length gold bond wires at both RF Input and RF Output for optimum RF performance. Close placement of external components is essential for resonant-free performance. Refer to TriQuint’s Gallium Arsenide Products Designers’ Information on our website under Application Information. TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com 5 Product Data Sheet TGP6336-EEU FUNCTIONAL BLOCK DIAGRAM TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com 6 Product Data Sheet TGP6336-EEU MECHANICAL DRAWING GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com 7