SES Series Ultra Small ESD Protector SES3V3N1006-2U ROHS Description The SES3V3N1006-2U ESD protector is designed to replace multilayer varistors (MLVs) in portable applications such as cell phones, notebook computers, and PDA’s. They feature large crosssectional area junctions for conducting high transient currents, offer desirable electrical characteristics for board level protection, such as fast response time,lower operating voltage, lower clamping voltage and no device degradationwhen compared to MLVs. The SES3V3N1006-2U protects sensitive semiconductor components from damage or upset due to electrostatic discharge (ESD) and other voltage induced transient events. The SES3V3N1006-2U is available in a DFN-2 package with working voltages of 3.3 volt. It gives designer the flexibility to protect one bidirectional line in applications where arrays are not practical. Additionally, it may be “sprinkled” around the board in Fapplications where board space is at a premium. It may be used to meet the ESD immunity requirements of IEC 61000-4-2, Level 4 (±15kV air, ±8kV contact discharge). Feature 100 Watts peak pulse power (tp = 8/20μs) Transient protection for data lines to IEC 61000-4-2 (ESD) ±15kV (air), ±8kV (contact) Small package for use in portable electronics Suitable replacement for MLVs in ESD protection applications Protect one I/O or power line Low clamping voltage Stand off voltages: 3.3V Low leakage current Solid-state silicon-avalanche technology Small Body Outline Dimensions: 1.0mm×0.6mm×0.5mm Equivalent to 0402 package Applications Cell Phone Handsets and Accessories Personal Digital Assistants (PDA’s) Notebooks, Desktops, and Servers Portable Instrumentation Cordless Phones Digital Cameras Peripherals MP3 Players Ultra Small ESD Protector 1 www.goodark.com SES Series Ultra Small ESD Protector SES3V3N1006-2U ROHS Electrical characteristics @25℃(unless otherwise specified) Parameter Symbol Conditions Working Voltage VRWM Breakdown voltage VBR It =1mA Reverse Leakage Current IR VRWM =3.3V T=25℃ Clamping Voltage VC Junction Capacitance Cj IPP=9.8A Min. Typ. Max. Units 3.3 V 5.0 V tP = 8/20μS VR=0V f = 1MHz 2.5 μA 10.4 V 12 pF Absolute maximum rating @25℃ Rating Symbol Value Units ±30 kV Per Human Body Model 16 kV Per Machine Model 400 V IEC 61000-4-2 (ESD) Contact ESD Voltage Peak Pulse Power ( tP = 8/20μS ) Ppk 100 W Maximum Peak Pulse Current ( tP = 8/20μS ) Ipp 9.8 A Lead Soldering Temperature TL 260 (10 sec) ℃ Operating Temperature TJ -55 to +125 ℃ TSTG -55 to +150 ℃ Storage Temperature Typical Characteristics Figure1.Peak pulse power vs pulse time Ultra Small ESD Protector 2 www.goodark.com SES Series Ultra Small ESD Protector SES3V3N1006-2U ROHS Figure2. Pulse wave form Figure3.Power derating curve Ultra Small ESD Protector 3 www.goodark.com SES Series Ultra Small ESD Protector SES3V3N1006-2U ROHS Product dimension and foot print Top View Side View Common Dimensions (mm) PKG. Ref. X1: Extreme thin Min. Nom. A 0.4 - 0.5 A1 0.00 - 0.05 A3 0.125 Ref. D 0.95 1.00 1.05 E 0.55 0.60 0.65 B 0.20 0.25 0.30 L 0.45 0.50 0.55 e Bottom View Max 0.65 BSC Foot Print Revision History Revision Date Changes 1.0 2008-7-3 - Ultra Small ESD Protector 4 www.goodark.com