SES Series Ultra Small ESD Protector SES5VN1006-2B ROHS Description The SES5VN1006-2B ESD protector is designed to replace multilayer varistors (MLVs) in portable applications such as cell phones, notebook computers, and PDA’s. They feature large cross-sectional area junctions for conducting high transient currents, offer desirable electrical characteristics for board level protection, such as fast response time, lower operating voltage, lower clamping voltage and no device degradation when compared to MLVs. The SES5VN1006-2B protects sensitive semiconductor components from damage or upset due to electrostatic discharge (ESD) and other voltage induced transient events. The SES5VN1006-2B is available in a DFN-2 package with working voltages of 5 volt. It gives designer the flexibility to protect one bidirectional line in applications where arrays are not practical. Additionally, it may be “sprinkled” around the board in applications where board space is at a premium. It may be used to meet the ESD immunity requirements of IEC 61000-4-2, Level 4 (±15kV air, ±8kV contact discharge) Feature 120 Watts peak pulse power (tp = 8/20μs) Transient protection for data lines to IEC 61000-4-2 (ESD) ±15kV (air), ±8kV (contact) Small package for use in portable electronics Suitable replacement for MLVs in ESD protection applications Protect one I/O or power line Low clamping voltage Stand off voltages: 5V Low leakage current Solid-state silicon-avalanche technology Small Body Outline Dimensions: 1.0mm×0.6mm×0.5mm Equivalent to 0402 package Applications Cell Phone Handsets and Accessories Personal Digital Assistants (PDA’s) Notebooks, Desktops, and Servers Portable Instrumentation Cordless Phones Digital Cameras Peripherals MP3 Players Ultra Small ESD Protector 1 www.goodark.com SE**** Series ESD Protector SEP2V8-4ULVC ROHS Electrical characteristics @25℃(unless otherwise specified) Parameter Symbol Conditions Working Voltage VRWM Breakdown voltage VBR It =1mA Reverse Leakage Current IR VRWM =3V T=25℃ Resistance Rd Junction Capacitance Cj Min. Typ. 6.0 6.8 Max. Units 5 V 8.0 V 0.1 μA 0.65 Ω 22 pF VR=0V f = 1MHz Absolute maximum rating @25℃ Rating Symbol Value Units Peak Pulse Power ( tP = 8/20μS ) Ppk 140 W Repetitive peak pulse current ( tP = 8/20μS ) Ipp 9 A Junction temperature Tj 125 ℃ Lead Soldering Temperature TL 260 (10 sec) ℃ Operating Temperature TJ -40 to +125 ℃ TSTG -55 to +150 ℃ Storage Temperature Typical Characteristics Ultra Small ESD Protector Product dimension and foot print 2 www.goodark.com SES Series Ultra Small ESD Protector SES5VN1006-2B ROHS Product dimension and foot print Top VieW Side View Common Dimensions (mm) PKG. Ref. Min. Nom. Max A 0.4 - 0.5 A1 0.00 - 0.05 A3 Bottom View 3 0.125 Ref. D 0.95 1.00 1.05 E 0.55 0.60 0.65 B 0.20 0.25 0.30 L 0.45 0.50 0.55 e Ultra Small ESD Protector X1: Extreme thin 0.65 BSC www.goodark.com SES Series TVS for Surge Protection SES5VT323 ROHS Revision History Revision Date Changes 1.0 2008-7-3 - Ultra Small ESD Protector 4 www.goodark.com