HANBit HMF2M32F4VSA Flash-ROM Module 8MByte (2Mx32Bit), 80Pin-MMC, 3.3V Design Part No. HMF2M32F4VSA GENERAL DESCRIPTION The HMF2M32F4V is a high-speed flash read only memory (FROM) module containing 2,097,152 words organized in a x32bit configuration. The module consists of four 1M x 16 FROM mounted on a 80-pin stackable type, double - sided, FR4printed circuit board. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from 12.0V flash or EPROM devices. Output enable (/OE) and write enable (/WE) can set the memory input and output. The host system can detect a program or erase operation is complete by observing the Ready Pin, or reading the DQ7(Data # Polling) and DQ6(Toggle) status bits. When FROM module is disable condition the module is becoming power standby mode, system designer can g et low-power design. All module components may be powered from a single + 3.0V DC power supply and all inputs and outputs are LVTTLcompatible. PIN ASSIGNMENT FEATURES P1 w Part Identification - HMF2M32F4VSA : Socket 5mm w Access time: 70, 80, 90, 120ns w High-density 8MByte design w High-reliability, low-power design w Single + 3.0V ± 0.5V power supply w All in/outputs are LVTTL-compatible w FR4-PCB design w 80-pin Designed by 40-pin Fine Pitch Connector (x 2EA) w Minimum 1,000,000 write/erase cycle w Sector erases architecture OPTIONS MARKING w Timing 70ns access -70 80ns access -80 90ns access -90 120ns access -120 w Packages 80-pin MMC URL: www.hbe.co.kr REV.02(August,2002) F P2 PIN Symbol PIN Symbol PIN Symbol PIN Symbol 1 VCC 21 VCC 1 VCC 21 VCC 2 CE0* 22 DQ16 2 DQ15 22 NC 3 NC 23 DQ24 3 DQ7 23 NC 4 NC 24 DQ17 4 DQ14 24 BYTE* 5 NC 25 DQ25 5 DQ6 25 OE* 6 RY_BY* 26 DQ18 6 DQ13 26 CE1* 7 VSS 27 VSS 7 VSS 27 VSS 8 RESET* 28 DQ26 8 DQ5 28 A13 9 WE* 29 DQ19 9 DQ12 29 A29 10 A10 30 DQ27 10 DQ4 30 A11 11 A21 31 DQ20 11 DQ11 31 A12 12 A20 32 DQ28 12 DQ3 32 A22 13 A19 33 DQ21 13 DQ10 33 A23 14 VSS 34 VSS 14 VSS 34 VSS 15 A18 35 DQ29 15 DQ2 35 A24 16 A17 36 DQ22 16 DQ9 36 A25 17 A16 37 DQ30 17 DQ1 37 A26 18 A15 38 DQ23 18 DQ8 38 A27 19 A14 39 DQ31 19 DQ0 39 A28 20 VCC 40 VCC 20 VCC 40 VCC 4 cf : Address & Data Bus is organized for LG Specification. ( A10 & DQ0 are MSB, A29 & DQ31 a re LSB) 1 HANBit Electronics Co., Ltd. HANBit HMF2M32F4VSA FUNCTIONAL BLOCK DIAGRAM 32 DQ0 - DQ31 20 A10 – A29 A10-29 DQ16-31 /WE /OE U1 /CE RY-BY /Reset A10-29 DQ 0-15 /WE /OE /CE0 U2 /CE RY-BY /Reset A10-29 DQ16-31 /WE /OE U3 /CE RY-BY /Reset A10-29 DQ 0-15 /WE /WE /OE /OE /CE /CE1 URL: www.hbe.co.kr REV.02(August,2002) U4 RY_/BY RY-BY /Reset /Reset 2 HANBit Electronics Co., Ltd. HANBit HMF2M32F4VSA TRUTH TABLE MODE /OE /CE /WE /RESET DQ ( /BYTE=L ) POWER STANDBY X H X Vcc±0.3V HIGH-Z STANDBY NOT SELECTED H L H H HIGH-Z ACTIVE READ L L H H DOUT ACTIVE WRITE or ERASE X L L H DIN ACTIVE NOTE: X means don’t care ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATING VIN,OUT -0.5V to Vcc+0.5V Voltage with respect to ground Vcc VCC -0.5V to +4.0V Storage Temperature TSTG -65oC to +150oC Voltage with respect to ground all other pins Operating Temperature TA -55oC to +125 oC w Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. RECOMMENDED DC OPERATING CONDITIONS PARAMETER SYMBOL MIN Vcc for ± 10% device Supply Voltages Vcc 2.7V Ground VSS 0 TYP. MAX 3.6V 0 0 DC AND OPERATING CHARACTERISTICS ( 0oC ≤ TA ≤ 70 oC ) PARAMETER TEST CONDITIONS SYMBOL MIN MAX UNIT Input Load Current Vcc=Vcc max, V IN= GND to Vcc IL1 ±1.0 µA Output Leakage Current Vcc=Vcc max, V OUT= GND to Vcc IL0 ±1.0 µA Output High Voltage IOH = -2.0mA, Vcc = Vcc min VOH Output Low Voltage IOL = 4.0mA, Vcc =Vcc min VOL /CE = VIL, 5MHZ Vcc Active Read Current (1) V 0.45 1MHZ Vcc Active Write Current (2) /CE = VIL, /OE=VIH ICC2 Vcc Standby Current /CE, /RESET=Vcc±0.3V ICC3 Low Vcc Lock-Out Voltage VLKO V 18 32 4 8 40 60 mA 60 mA 2.5 V ICC1 /OE = VIH, Notes: 2.4 mA 2.3 1. The Icc current listed is typically less than 2mA/MHz, with /OE at V IH. 2. Icc active while embedded algorithm (program or erase) is in progress 3. Maximum Icc current specifications are tested with Vcc=Vcc max URL: www.hbe.co.kr REV.02(August,2002) 3 HANBit Electronics Co., Ltd. HANBit HMF2M32F4VSA ERASE AND PROGRAMMING PERFORMANCE LIMITS PARAMETER UNIT MIN. Sector Erase Time TYP. MAX. 0.7 15 - Chip Erase Time COMMENTS sec 25 Excludes 00H programming prior to erasure sec Byte Programming Time - 9 300 µs Chip Programming Time - 18 54 sec Excludes system-level overhead TSOP CAPACITANCE PARAMETER SYMBOL CIN PARAMETER DESCRIPTION TEST SETUP MIN MAX UNIT VIN = 0 6 7.5 pF VOUT = 0 8.5 12 pF VIN = 0 7.5 9 pF Input Capacitance COUT Output Capacitance CIN2 Control Pin Capacitance Notes : Test conditions TA = 25o C, f=1.0 MHz. AC CHARACTERISTICS u Read Only Operations Characteristics PARAMETER SYMBOLS Speed Options DESCRIPTION TEST SETUP UNIT JEDEC STANDARD tAVAV tRC Read Cycle Time -70R -80 -90 -120 Min 70 80 90 120 ns Max 70 80 90 120 ns Max 70 80 90 120 ns tAVQV tACC Address to Output Delay /CE = V IL /OE = VIL tELQV tCE Chip Enable to Output Delay /OE = VIL tGLQV tOE Chip Enable to Output Delay Max 30 30 35 35 ns tEHQZ tDF Chip Enable to Output High-Z Max 25 25 30 30 ns tGHQZ tDF Max 25 25 30 30 ns tAXQX tQH Output Enable to Output High-Z Output Hold Time From Addresses, /CE or /OE, Whichever Occurs First Min 0 ns TEST SPECIFICATIONS TEST CONDITION 70R, 80 Output load 90, 120 UNIT 100 pF 1TTL gate Output load capacitance,CL (Including jig capacitance) 30 Input rise and full times 5 ns 0.0-3.0 V Input timing measurement reference levels 1.5 V Output timing measurement reference levels 1.5 V Input pulse levels URL: www.hbe.co.kr REV.02(August,2002) 4 HANBit Electronics Co., Ltd. HANBit HMF2M32F4VSA 5.0V 2.7kΩ IN3064 or Equivalent Device Under Test CL 6.2kΩ Diodes = IN3064 or Equivalent Note : CL = 100pF including jig capacitance u Erase/Program Operations PARAMETER SYMBOLS Speed Options DESCRIPTION UNIT JEDEC STANDARD 70R 80 90 120 tAVAV tWC Write Cycle Time Min 70 80 90 12 tAVWL tAS Address Setup Time Min tWLAX tAH Address Hold Time Min 45 45 45 50 ns tDVWH tDS Data Setup Time Min 35 35 45 50 ns tWHDX tDH Data Hold Time Min 0 ns tOES Output Enable Setup Time Min 0 ns Read Recover Time Before Write Min 0 ns 0 ns ns tGHWL tGHWL tELWL tCS /CE Setup Time Min 0 ns tWHEH tCH /CE Hold Time Min 0 ns tWLWH tWP Write Pulse Width Min tWHWL tWPH Write Pulse Width High Min 30 ns tWHWH1 tWHWH1 Byte Programming Operation Typ 9 µs tWHWH2 tWHWH2 Sector Erase Operation (Note1) Typ 0.7 sec Vcc set up time Min 50 µs tVCS 35 35 35 50 ns Notes : 1 . This does not include the preprogramming time 2 . This timing is only for Sector Protect operations URL: www.hbe.co.kr REV.02(August,2002) 5 HANBit Electronics Co., Ltd. HANBit HMF2M32F4VSA u Erase/Program Operations Alternate /CE Controlled Writes PARAMETER SYMBOLS Speed Options DESCRIPTION UNIT JEDEC STANDARD -70R -80 -90 120 tAVAV tWC Write Cycle Time Min 70 80 90 12 tAVWL tAS Address Setup Time Min tWLAX tAH Address Hold Time Min 45 45 45 50 ns tDVWH tDS Data Setup Time Min 35 35 45 50 ns tWHDX tDH Data Hold Time Min 0 ns tOES Output Enable Setup Time Min 0 ns Read Recover Time Before Write Min 0 ns 0 ns ns tGHWL tGHWL tELWL tCS /CE Setup Time Min 0 ns tWHEH tCH /CE Hold Time Min 0 ns tWLWH tWP Write Pulse Width Min tWHWL tWPH Write Pulse Width High Min 30 ns tWHWH1 tWHWH1 Byte Programming Operation Typ 9 µs tWHWH2 tWHWH2 Sector Erase Operation (Note1) Typ 0.7 sec 35 35 35 50 ns Notes : 1. This does not include the preprogramming time 2 . This timing is only for Sector Protect operations URL: www.hbe.co.kr REV.02(August,2002) 6 HANBit Electronics Co., Ltd. HANBit HMF2M32F4VSA u READ OPERATIONS TIMING u RESET TIMING URL: www.hbe.co.kr REV.02(August,2002) 7 HANBit Electronics Co., Ltd. HANBit HMF2M32F4VSA u PROGRAM OPERATIONS TIMING u CHIP/SECTOR ERASE OPERATION TIMINGS URL: www.hbe.co.kr REV.02(August,2002) 8 HANBit Electronics Co., Ltd. HANBit HMF2M32F4VSA u DATA# POLLING TIMES(DURING EMBEDDED ALGORITHMS) u TOGGLE# BIT TIMINGS (DURING EMBEDDED ALGORITHMS) URL: www.hbe.co.kr REV.02(August,2002) 9 HANBit Electronics Co., Ltd. HANBit HMF2M32F4VSA u SECTOR PROTECT UNPROTECT TIMEING DIAGRAM u ALTERNATE CE# CONTROLLED WRITE OPERATING TIMINGS URL: www.hbe.co.kr REV.02(August,2002) 10 HANBit Electronics Co., Ltd. HANBit HMF2M32F4VSA PACKAGE DIMMENSIONS URL: www.hbe.co.kr REV.02(August,2002) 11 HANBit Electronics Co., Ltd. HANBit HMF2M32F4VSA ORDERING INFORMATION Part Number Density Org. Package HMF2M32F2V-70 4MByte x 32 80Pin -MMC HMF2M32F2V-80 4Mbyte x 32 HMF2M32F2V-90 4Mbyte HMF2M32F2V-120 4Mbyte URL: www.hbe.co.kr REV.02(August,2002) Component Vcc SPEED 2EA 3.3V 70ns 80Pin – MMC 2EA 3.3V 80ns x 32 80Pin – MMC 2EA 3.3V 90ns x 32 80Pin -MMC 2EA 3.3V 120ns 12 Number HANBit Electronics Co., Ltd.