HANBit HMF2M32M8A FLASH-ROM MODULE 8MByte (2M x 32-Bit), 72pin-SIMM, 5V Part No. HMF2M32M8A GENERAL DESCRIPTION The HMF2M32M8A is a high-speed flash read only memory (FROM) module containing 2,097,152 words organized in a x32bit configuration. The module consists of eight 1M x 8 FROM mounted on a 72 -pin, double-sided, FR4-printed circuit board. The HMF2M32M8A is entirely pin and command set compatible with JEDEC standard 4M -bit EEPROMs. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from 12.0V flash or EPROM devices. Eight chip enable inputs, (/1CSLL, /2CSLL, /1CSLH, /2CSLH, /1CSHL, /2CSHL, /1CSHH, /2CSHH ) are used to enable the module’s 4 bytes independently. Output enable (/OE) and write enable (/WE) can set the memory input and output. When FROM module is disable condition the module is becoming power standby mode, system designer can get low -power design. All module components may be powered from a single +5V DC power supply and all inputs and outputs are TTL-compatible. PIN ASSIGNMENT FEATURES PIN SYMBOL PIN SYMBOL PIN SYMBOL w Access time : 75, 90 and 120ns 1 Vss 25 D17 49 /WE w High-density 8MByte design 2 NC 26 D18 50 A20 w High-reliability, low-power design 3 D0 27 D19 51 A19 4 D1 28 D20 52 A18 5 D2 29 D21 53 A17 w Easy memory expansion 6 D3 30 Vcc 54 A16 w All inputs and outputs are TTL-compatible 7 D4 31 D22 55 A15 w FR4-PCB design 8 D5 32 D23 56 A14 w Low profile 72-pin SIMM 9 D6 33 /1CSHL 57 A13 10 VCC 34 /2CSHL 58 A12 11 D7 35 D24 59 Vcc w Sectors erase architecture 12 /1CSLL 36 D25 60 A11 w Sector group protection 13 /2CSLL 37 D26 61 A10 w Temporary sector group unprotection 14 D8 38 D27 62 A9 15 D9 39 Vss 63 A8 16 D10 40 D28 64 A7 17 D11 41 D29 65 A6 18 D12 42 D30 66 A5 19 D13 43 D31 67 A4 20 D14 44 /1CSHH 68 A3 21 D15 45 /2CSHH 69 A2 22 /1CSLH 46 VCC 70 A21 23 /2CSLH 47 /RESET 71 A22 24 D16 48 /OE 72 Vss w Single + 5V ± 0.5V power supply w Minimum 1,000,000 write/erase cycle w The used device is Am29F080B OPTIONS MARKING w Timing 75ns access - 75 90ns access - 90 120ns access -120 w Packages 72-pin SIMM URL: www.hbe.co.kr REV.02(August,2002) M 72-PIN SIMM TOP VIEW 1 HANBit Electronics Co., Ltd. HANBit HMF2M32M8A FUNCTIONAL BLOCK DIAGRAM D DQ 0-D31 0-31 D32 A2-A22 A21 A0-19 A0-20 A0-20 D0-7 D0-7 /WE /WE U1 /OE U5 /OE /CE /CE /2CSLL /1CSLL A0-20 A0-20 D8-15 D8-15 /WE /WE U2 /OE U6 /OE /CE /CE /1CSLH /2CSLH A0-20 A0-20 D16-23 D16-23 /WE /WE U3 /OE /CE /CE /1CSHL /2CSHL A0-20 A0-20 D24-31 /WE /WE /OE U7 /OE /OE D24-31 /WE U4 /WE /OE /OE U8 /CE /CE /1CSHH /2CSHH TRUTH TABLE MODE /OE /CE /WE DQ POWER STANDBY X H X HIGH-Z STANDBY NOT SELECTED H L H HIGH-Z ACTIVE READ L L H Q ACTIVE WRITE or ERASE X L L D ACTIVE URL: www.hbe.co.kr REV.02(August,2002) 2 HANBit Electronics Co., Ltd. HANBit HMF2M32M8A NOTE: X means don’t care ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATING VIN,OUT -2.0V to +7.0V Voltage with respect to ground Vcc VCC -2.0V to +7.0V Storage Temperature TSTG -65oC to +125oC Voltage with respect to ground all other pins Operating Temperature TA -55oC to +125 oC w Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and fu nctional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. RECOMMENDED DC OPERATING CONDITIONS PARAMETER SYMBOL MIN TYP. MAX Vcc for ±5% device Supply Voltages VCC 4.75V 5.25V Vcc for ± 10% device Supply Voltages Vcc 4.5V 5.5V Ground VSS 0 0 0 DC AND OPERATING CHARACTERISTICS (0oC ≤ TA ≤ 70 oC ; Vcc = 5V ± 0.5V ) PARAMETER TEST CONDITIONS SYMBOL MIN MAX UNITS IL1 ±8.0 µA IL0 ±8.0 µA Vcc=Vcc max, V IN= GND to Input Leakage Current Vcc Vcc=Vcc max, VOUT= GND to Output Leakage Current Vcc Output High Voltage IOH = -2.5mA, Vcc = Vcc min VOH 0.85x Vcc V Output Low Voltage IOL = 12mA, Vcc =Vcc min VOL 0.45 V Vcc Active Current for /CE = VIL, /OE=VIH, ICC1 320 mA /CE = VIL, /OE=VIH ICC2 320 mA /CE= VIH ICC3 40 µA 4.2 V Read(1) Vcc Active Current for Program or Erase(2) Vcc Standby Current Low Vcc Lock-Out Voltage VLKO 3.2 Notes: 1. The Icc current listed is typically less than 2mA/MHz, with /OE at V IH. URL: www.hbe.co.kr REV.02(August,2002) 3 HANBit Electronics Co., Ltd. HANBit HMF2M32M8A 2. Icc active while embedded algorithm (program or erase) is in progress 3. Maximum Icc current specifications are tested with Vcc=Vcc max ERASE AND PROGRAMMING PERFORMANCE LIMITS PARAMETER UNIT MIN. TYP. COMMENTS MAX. Excludes 00H programming Sector Erase Time - 1 8 sec prior to erasure Byte Programming Time - 7 300 µs Excludes system-level overhead Chip Programming Time - 7.2 21.6 sec Excludes system-level overhead CAPACITANCE PARAMETER PARAMETER SYMBOL DESCRIPTION CIN TEST SETUP MIN MAX UNIT VIN = 0 6 7.5 pF VOUT = 0 8.5 12 pF VIN = 0 7.5 9 pF TEST SETUP -75 -90 -120 UNIT Min 70 90 120 ns Max 70 90 120 ns Max 70 90 120 ns Input Capacitance COUT Output Capacitance CIN2 Control Pin Capacitance o Notes : Test conditions TA = 25 C, f=1.0 MHz. AC CHARACTERISTICS u Read Only Operations Characteristics PARAMETER SYMBOLS DESCRIPTION JEDEC STANDAR D tAVAV tRC tAVQV tACC Read Cycle Time /CE = V IL Address to Output Delay /OE = V IL tELQV tCE Chip Enable to Output Delay /OE = V IL tGLQV tOE Chip Enable to Output Delay Max 40 40 50 ns tEHQZ tDF Chip Enable to Output High-Z Max 20 20 30 ns tGHQZ tDF Output Enable to Output High-Z Max 20 20 30 ns Min 0 0 0 ns Output Hold Time From Addresses, tAXQX tQH /CE or /OE, Whichever Occurs First URL: www.hbe.co.kr REV.02(August,2002) 4 HANBit Electronics Co., Ltd. HANBit HMF2M32M8A TEST SPECIFICATIONS TEST CONDITION 75 ALL OTHERS UNIT Output load Output load capacitance, CL (Including jig capacitance) 1TTL gate 30 100 pF Input rise and full times 5 20 ns 0.0 - 3.0 0.45-2.4 V Input timing measurement reference levels 1.5 0.8, 2.0 V Output timing measurement reference levels 1.5 0.8, 2.0 V Input pulse levels 5.0V 2.7kΩ IN3064 or Equivalent Device Under CL 6.2kΩ Diodes = IN3064 or Equivalent Note : CL = 100pF including jig capacitance u Erase/Program Operations PARAMETER SYMBOLS JEDEC STANDARD DESCRIPTION -75 -90 -120 UNIT 70 90 120 ns tAVAV tWC Write Cycle Time Min tAVWL tAS Address Setup Time Min tWLAX tAH Address Hold Time Min 40 45 50 ns tDVWH tDS Data Setup Time Min 40 45 50 ns tWHDX tDH Data Hold Time Min 0 ns tOES Output Enable Setup Time Min 0 ns Read Recover Time Before Write Min 0 ns 0 ns tGHWL tGHWL tELWL tCS /CE Setup Time Min 0 ns tWHEH tCH /CE Hold Time Min 0 ns tWLWH tWP Write Pulse Width Min tWHWL tWPH Write Pulse Width High Min 20 ns tWHWH1 tWHWH1 Byte Programming Operation Typ 7 µs tWHWH2 tWHWH2 Sector Erase Operation (Note1) Typ 1 sec Vcc set up time Min 50 µs tVCS 40 45 50 ns Notes : 1. This does not include the preprogramming time 2. This timing is only for Sector Protect operations URL: www.hbe.co.kr REV.02(August,2002) 5 HANBit Electronics Co., Ltd. HANBit HMF2M32M8A u Erase/Program Operations Alternate /CE Controlled Writes PARAMETER SYMBOLS DESCRIPTION -75 -90 -120 UNIT 70 90 120 ns JEDEC STANDARD tAVAV tWC Write Cycle Time Min tAVWL tAS Address Setup Time Min tWLAX tAH Address Hold Time Min 40 45 50 ns tDVWH tDS Data Setup Time Min 40 45 50 ns tWHDX tDH Data Hold Time Min 0 ns tGHEL tGHEL Read Recover Time Before Write Min 0 ns tWLEL tWS /CE Setup Time Min 0 ns tEHWH tWH /CE Hold Time Min 0 ns tELEH tCP Write Pulse Width Min tEHEL tCPH Write Pulse Width High Min 20 ns tWHWH1 tWHWH1 Byte Programming Operation Typ 7 µs tWHWH2 tWHWH2 Sector Erase Operation (Note1) Typ 1 sec 0 40 45 ns 50 ns Notes : 1. This does not include the preprogramming time 2. This timing is only for Sector Protect operations URL: www.hbe.co.kr REV.02(August,2002) 6 HANBit Electronics Co., Ltd. HANBit HMF2M32M8A u READ OPERATIONS TIMING u RESET TIMING URL: www.hbe.co.kr REV.02(August,2002) 7 HANBit Electronics Co., Ltd. HANBit HMF2M32M8A u PROGRAM OPERATIONS TIMING u CHIP/SECTOR ERASE OPERATION TIMINGS URL: www.hbe.co.kr REV.02(August,2002) 8 HANBit Electronics Co., Ltd. HANBit HMF2M32M8A u DATA# POLLING TIMES(DURING EMBEDDED ALGORITHMS) u TOGGLE# BIT TIMINGS (DURING EMBEDDED ALGORITHMS) URL: www.hbe.co.kr REV.02(August,2002) 9 HANBit Electronics Co., Ltd. HANBit HMF2M32M8A u SECTOR PROTECT UNPROTECT TIMEING DIAGRAM u ALTERNATE CE# CONTROLLED WRITE OPERATING TIMINGS URL: www.hbe.co.kr REV.02(August,2002) 10 HANBit Electronics Co., Ltd. HANBit HMF2M32M8A PACKAGE DIMENSIONS (Front-Side) (Rear-Side) 2.54 mm 0.25 mm MAX MIN Gold: 1.04±0.10 mm 1.27 Solder: 0.914±0.10 mm 1.27±0.08 (Solder & Gold Plating) URL: www.hbe.co.kr REV.02(August,2002) 11 HANBit Electronics Co., Ltd. HANBit HMF2M32M8A ORDERING INFORMATION Part Number Density Org. Package HMF2M32M8A-75 8MByte 2M×32bit 72Pin-SIMM HMF2M32M8A-90 8MByte 2M×32bit HMF2M32M8A-120 8MByte 2M×32bit URL: www.hbe.co.kr REV.02(August,2002) Component Vcc SPEED 8EA 5.0V 75ns 72Pin-SIMM 8EA 5.0V 90ns 72Pin-SIMM 8EA 5.0V 120ns 12 Number HANBit Electronics Co., Ltd.