HANBit HMF4M32M4GL FLASH-ROM MODULE 16MByte (4M x 32-Bit), 72-Pin SIMM, 5V Part No. HMF4M32M8GL GENERAL DESCRIPTION The HMF4M32M8GL is a high-speed flash read only memory (FROM) module containing 4,194,304 words organized in a x32bit configuration. The module consists of eight 2M x 8bit FROM mounted on a 72 -pin, single-sided, FR4-printed circuit board. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from 12.0V flash or EPROM devices. Four chip enable inputs, (/WE0, /WE1, /WE2, /WE3) are used to enable the module’s 8bits independently. Output enable (/OE) and write enable (/WE) can set the memory input and output. When FROM module is disable condition the module is becoming power standby mode, system designer can get low -power design. All module components may be powered from a single +5 V DC power supply and all inputs and outputs are TTLcompatible. PIN ASSIGNMENT FEATURES w Access time : 75, 90 and 120ns PIN SYMBOL PIN SYMBOL PIN SYMBOL w High-density 16MByte design 1 25 DQ17 49 /BANK-E0 w High-reliability, low-power design 2 26 DQ18 50 A18 w Single + 5V ± 0.5V power supply 3 Vss /BANKE1 DQ0 27 DQ19 51 A17 4 DQ1 28 DQ20 52 A16 5 DQ2 29 DQ21 53 A15 6 DQ3 30 Vcc 54 A14 w FR4-PCB design 7 DQ4 31 DQ22 55 A13 w Low profile 72-pin SIMM 8 DQ5 32 DQ23 56 A12 w Easy memory expansion w All inputs and outputs are TTL-compatible w Minimum 1,000,000-write/erase cycle w Sectors erase architecture 9 DQ6 33 /WE2 57 A11 10 Vcc 34 NC 58 A10 11 DQ7 35 DQ24 59 Vcc w Sector group protection 12 /WE0 36 DQ25 60 A9 w Temporary sector group unprotect ion 13 /RY_BY 37 DQ26 61 A8 w The used device is MX29F016 14 DQ8 38 DQ27 62 A7 15 DQ9 39 Vss 63 A6 16 DQ10 40 DQ28 64 A5 17 DQ11 41 DQ29 65 A4 OPTION MARKING w Timing 18 DQ12 42 DQ30 66 A3 75ns access -75 19 DQ13 43 DQ31 67 A2 90ns access -90 20 DQ14 44 /WE3 68 A1 21 DQ15 45 NC 69 A0 22 /WE1 46 /RESET 70 A20 23 NC 47 A19 71 A21 24 DQ16 48 /OE 72 Vss 120ns access -120 w Packages 72-pin SIMM M 72-PIN SIMM TOP VIEW URL: www.hbe.co.kr REV.02(August,2002) 1 HANBit Electronics Co., Ltd. HANBit HMF4M32M4GL FUNCTIONAL BLOCK DIAGRAM DQ0 - DQ31 A0 – A20 32 21 A0-20 A0-20 DQ 0-7 /WE0 /WE U1 /OE /Reset A0-20 A0-20 /WE U2 /OE /OE /CE RY-BY /Reset /Reset A0-20 A0-20 /WE U3 /OE /WE /OE /Reset A0-20 A0-20 /WE /OE /OE DQ0-7 U4 /CE RY-BY /Reset DQ 0-7 DQ 8-15 U6 DQ0-7 RY-BY /Reset /WE3 U5 DQ 16-23 U7 /CE /CE RY-BY /Reset /WE /CE RY-BY DQ0-7 /BANK-E0 /RY_BY /OE RY-BY /Reset DQ 0-7 /WE2 /WE DQ 0-7 /CE /CE RY-BY /WE1 DQ 0-7 /WE /OE DQ 24-31 DQ0-7 U8 /CE RY-BY /Reset /BANK-E1 URL: www.hbe.co.kr REV.02(August,2002) 2 HANBit Electronics Co., Ltd. HANBit HMF4M32M4GL TRUTH TABLE MODE /OE /CE /WE DQ POWER STANDBY X H X HIGH-Z STANDBY NOT SELECTED H L H HIGH-Z ACTIVE READ L L H Q ACTIVE WRITE or ERASE X L L D ACTIVE NOTE: X means don’t care ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATING VIN,OUT -2.0V to +7.0V Voltage with respect to ground Vcc VCC -2.0V to +7.0V Storage Temperature TSTG -65oC to +150 oC Voltage with respect to ground all other pins Operating Temperature TA -55oC to +125 oC w Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those i ndicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. RECOMMENDED DC OPERATING CONDITIONS SYMBOL MIN Vcc for ± 5% device supply voltage Vcc 4.75V 5.25V Vcc for ± 10% device supply voltages Vcc 4.5V 5.5V Ground VSS 0 PARAMETER TYP. MAX 0 0 DC AND OPERATING CHARACTERISTICS (0oC ≤ TA ≤ 70 oC ; Vcc = 5V ± 0.5V ) PARAMETER TEST CONDITIONS SYMBOL MIN MAX UNITS Input Leakage Current Vcc=Vcc max, V IN= GND to Vcc IL1 ±1.0 µA Output Leakage Current Vcc=Vcc max, VOUT= GND to Vcc IL0 ±1.0 µA Output High Voltage IOH = -2.5mA, Vcc = Vcc min VOH Output Low Voltage IOL = 12mA, Vcc =Vcc min VOL 0.45 V Vcc Active Current for Read(1) /CE = VIL, /OE=VIH, ICC1 40 mA /CE = VIL, /OE=VIH ICC2 60 mA /CE= VIH ICC3 1.0 mA 4.2 V 2.4 V Vcc Active Current for Program or Erase(2) Vcc Standby Current Low Vcc Lock-Out Voltage VLKO 3.2 Notes: 1. The Icc current listed is typically less than 2mA/MHz, with /OE at V IH. 2. Icc active while embedded algorithm (program or erase) is in progress URL: www.hbe.co.kr REV.02(August,2002) 3 HANBit Electronics Co., Ltd. HANBit HMF4M32M4GL 3. Maximum Icc current specifications are tested with Vcc=Vcc max ERASE AND PROGRAMMING PERFORMANCE LIMITS PARAMETER UNIT MIN. TYP. COMMENTS MAX. Excludes 00H programming Sector Erase Time - 1 8 sec prior to erasure Byte Programming Time - 7 300 µs Excludes system-level overhead Chip Programming Time - 28.8 86.4 sec Excludes system-level overhead TSOP CAPACITANCE PARAMETER PARAMETER SYMBOL DESCRIPTION CIN TEST SETUP MIN MAX UNIT VIN = 0 6 7.5 pF VOUT = 0 8.5 12 pF VIN = 0 7.5 9 pF Input Capacitance COUT Output Capacitance CIN2 Control Pin Capacitance Notes : Test conditions TA = 25o C, f=1.0 MHz. AC CHARACTERISTICS u Read Only Operations Characteristics PARAMETER SYMBOLS DESCRIPTION JEDEC STANDARD tAVAV tRC tAVQV tACC TEST SETUP Read Cycle Time -75 -90 UNIT Min 70 90 ns Max 70 90 ns Max 70 90 ns /CE = V IL Address to Output Delay /OE = VIL tELQV tCE Chip Enable to Output Delay /OE = VIL tGLQV tOE Chip Enable to Output Delay Max 40 40 ns tEHQZ tDF Chip Enable to Output High-Z Max 20 20 ns tGHQZ tDF Output Enable to Output High-Z Max 20 20 ns tAXQX tQH Min 0 0 ns Output Hold Time From Addresses, /CE or /OE, Whichever Occurs First TEST SPECIFICATIONS TEST CONDITION 75 Output load ALL OTHERS UNIT 1TTL gate Output load capacitance, 30 100 pF CL (Including jig capacitance) URL: www.hbe.co.kr REV.02(August,2002) 4 HANBit Electronics Co., Ltd. HANBit HMF4M32M4GL Input rise and full times 5 20 ns 0.0 - 3.0 0.45-2.4 V Input timing measurement reference levels 1.5 0.8 V Output timing measurement reference levels 1.5 2.0 V Input pulse levels 5.0V 2.7kΩ IN3064 or Equivalent Device Under Test CL 6.2kΩ Diodes = IN3064 or Equivalent Note : CL = 100pF including jig capacitance u Write (Erase/Program) Operations PARAMETER SYMBOLS DESCRIPTION -75 -90 UNIT JEDEC STANDARD tAVAV tWC Write Cycle Time Min 70 90 ns tAVWL tAS Address Setup Time Min 0 0 ns tWLAX tAH Address Hold Time Min 40 45 ns tDVWH tDS Data Setup Time Min 40 45 ns tWHDX tDH Data Hold Time Min 0 0 ns tGHWL tGHWL Read Recover Time Before Write Min 0 0 ns tELWL tCS /CE Setup Time Min 0 0 ns tWHEH tCH /CE Hold Time Min 0 0 ns tWLWH tWP Write Pulse Width Min 40 45 ns tWHWL tWPH Write Pulse Width High Min 20 20 ns tWHWH1 tWHWH1 Byte Programming Operation Typ 7 7 µs tWHWH2 tWHWH2 Sector Erase Operation (Note1) Typ 1 1 Sec Vcc set up time Min 50 50 µs tVCS Notes : 1. This does not include the preprogramming time URL: www.hbe.co.kr REV.02(August,2002) 5 HANBit Electronics Co., Ltd. HANBit HMF4M32M4GL 2. This timing is only for Sector Protect operations uWrite(Erase/Program) Operations Alternate /CE Controlled Writes PARAMETER SYMBOLS DESCRIPTION -75 -90 UNIT Min 70 90 Ns Address Setup Time Min 0 0 ns tAH Address Hold Time Min 40 45 ns tDVWH tDS Data Setup Time Min 40 45 ns tWHDX tDH Data Hold Time Min 0 0 ns tOES Output Enable Setup Time Min 0 0 ns Read Recover Time Before Write Min 0 0 ns JEDEC STANDARD tAVAV tWC Write Cycle Time tAVWL tAS tWLAX tGHWL tGHWL tELWL tCS /CE Setup Time Min 0 0 ns tWHEH tCH /CE Hold Time Min 0 0 ns tWLWH tWP Write Pulse Width Min 40 45 ns tWHWL tWPH Write Pulse Width High Min 20 20 ns tWHWH1 tWHWH1 Byte Programming Operation Typ 7 7 µs tWHWH2 tWHWH2 Sector Erase Operation (Note1) Typ 1 1 sec Notes : 1. This does not include the preprogramming time 2. This timing is only for Sector Protect operations URL: www.hbe.co.kr REV.02(August,2002) 6 HANBit Electronics Co., Ltd. HANBit HMF4M32M4GL u READ OPERATIONS TIMING u RESET TIMING URL: www.hbe.co.kr REV.02(August,2002) 7 HANBit Electronics Co., Ltd. HANBit HMF4M32M4GL u PROGRAM OPERATIONS TIMING u CHIP/SECTOR ERASE OPERATION TIMINGS URL: www.hbe.co.kr REV.02(August,2002) 8 HANBit Electronics Co., Ltd. HANBit HMF4M32M4GL u DATA# POLLING TIMES(DURING EMBEDDED ALGORITHMS) u TOGGLE# BIT TIMINGS (DURING EMBEDDED ALGORITHMS) URL: www.hbe.co.kr REV.02(August,2002) 9 HANBit Electronics Co., Ltd. HANBit HMF4M32M4GL u SECTOR PROTECT UNPROTECT TIMEING DIAGRAM u ALTERNATE CE# CONTROLLED WRITE OPERATING TIMINGS URL: www.hbe.co.kr REV.02(August,2002) 10 HANBit Electronics Co., Ltd. HANBit HMF4M32M4GL PACKAGE DIMENSIONS 108mm 3.2 mm 6.35 mm 1 72 2.03 mm 1.02 mm 6.35 mm 1.27 mm 3.34 mm 95.25 mm - 2.54 mm 0.25 mm MAX MIN 1.27±0.08 mm Gold: 1.04±0.10 mm 1.27 mm Solder: 0.914±0.10 mm (Solder & Gold Plating) ORDERING INFORMATION Part Number Density Org. Package HMF4M32M8GL-75 16MByte 4MX 32bit 72 Pin-SIMM HMF4M32M8GL-90 16MByte 4MX 32bit HMF4M32M8GL-120 16MByte 4MX 32bit URL: www.hbe.co.kr REV.02(August,2002) Component Vcc SPEED 8EA 5V 75ns 72 Pin-SIMM 8EA 5V 90ns 72 Pin-SIMM 8EA 5V 120ns 11 Number HANBit Electronics Co., Ltd.