HANBit HMF4M32B8V Flash-ROM Module 16MByte (4Mx32Bit), 72Pin-SO-DIMM, 3.3V Design Part No. HMF4M32B8V GENERAL DESCRIPTION The HMF4M32B8V is a high-speed flash read only memory (FROM) module containing 8,388,608words organized in a x32bit configuration. The module consists of eight 1M x 16 FROM mounted on a 72-pin SO-DIMM type, double - sided, FR4printed circuit board. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from 12.0V flash or EPROM devices. Output enable (/OE) and write enable (/WE) can set the memory input and output. The host system can detect a program or erase operation is complete by observing the Ready Pin, or reading the DQ7(Data # Polling) and DQ6(Toggle) status bits. When FROM module is disable condition the module is becoming power standby mode, system designer can get low-power design. All module components may be powered from a single +3.0V DC power supply and all inputs and outputs are LVTTLcompatible. FEATURES PIN ASSIGNMENT Access time: 70, 80, 90, 120ns High-density 16MByte design High-reliability, low-power design Single + 3.0V ± 0.5V power supply All in/outputs are LVTTL-compatible FR4-PCB design Minimum 10,000,000 write/erase cycle Sector erases architecture OPTIONS MARKING Timing 70ns access -70 80ns access -80 90ns access -90 120ns access -120 Packages 72-pin SO-DIMM URL :www.hbe.co.kr REV.00(October,2003) B PIN Symbol PIN Symbol PIN Symbol PIN Symbol 1 Vss 21 DQ15 41 DQ29 61 A8 2 /RESET 22 /CE_4L 42 DQ30 62 A7 3 DQ0 23 /CE_3H 43 DQ31 63 A6 4 DQ1 24 DQ16 44 NC 64 A5 5 DQ2 25 DQ17 45 /CE_4H 65 A4 6 DQ3 26 DQ18 46 /CE_3L 66 A3 7 DQ4 27 DQ19 47 A19 67 A2 8 DQ5 28 DQ20 48 /OE 68 A1 9 DQ6 29 DQ21 49 /WE 69 A0 10 Vcc 30 Vcc 50 A18 70 A20 11 DQ7 31 DQ22 51 A17 71 NC 12 /CE_1L 32 DQ23 52 A16 72 Vss 13 /CE_2L 33 /CE_1H 53 A15 14 DQ8 34 /CE_2H 54 A14 15 DQ9 35 DQ24 55 A13 16 DQ10 36 DQ25 56 A12 17 DQ11 37 DQ26 57 A11 18 DQ12 38 DQ27 58 A10 19 DQ13 39 Vss 59 Vcc 20 DQ14 40 DQ28 60 A9 1 HANBit Electronics Co., Ltd. HANBit HMF4M32B8V FUNCTIONAL BLOCK DIAGRAM DQ0 - DQ31 A0 – A20 21 32 A0-20 A0-20 DQ 0-15 DQ 0-15 /WE /WE /OE /CE_IL /OE U1 /CE_3L /CE U5 /CE RY-BY RY-BY /Reset /Reset A0-20 A0-20 DQ 16-31 DQ 16-31 /WE /WE /OE /CE_IH U3 /CE_3H /CE /CE RY-BY RY-BY /Reset /Reset A0-20 A0-20 /WE /WE /OE U2 /OE /CE_4L /CE /OE /CE_2H RY-BY RY-BY /Reset /Reset A0-20 A0-20 /RY_BY /RESET DQ 16-31 /WE /OE /WE U4 /OE /CE_4H /CE U7 /CE DQ 16-31 /WE U6 DQ 0-15 DQ 0-15 /CE_2L /OE U8 /CE RY-BY RY-BY /Reset /Reset TRUTH TABLE URL :www.hbe.co.kr REV.00(October,2003) 2 HANBit Electronics Co., Ltd. HANBit HMF4M32B8V MODE /OE /CE /WE /RESET DQ ( /BYTE=L ) POWER STANDBY X H X Vcc±0.3V HIGH-Z STANDBY NOT SELECTED H L H H HIGH-Z ACTIVE READ L L H H DOUT ACTIVE WRITE or ERASE X L L H DIN ACTIVE NOTE: X means don’t care ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATING VIN,OUT -0.5V to Vcc+0.5V Voltage with respect to ground Vcc VCC -0.5V to +4.0V Storage Temperature TSTG -65oC to +150oC Voltage with respect to ground all other pins Operating Temperature TA -55oC to +125oC Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. RECOMMENDED DC OPERATING CONDITIONS PARAMETER SYMBOL MIN Vcc for ± 10% device Supply Voltages Vcc 2.7V Ground VSS 0 TYP. MAX 3.6V 0 0 DC AND OPERATING CHARACTERISTICS ( 0oC ≤ TA ( 70 oC ) parameter test Conditions Symbol Min Max Unit Input Load Current Vcc=Vcc max, VIN= GND to Vcc IL1 1.0 µA Output Leakage Current Vcc=Vcc max, VOUT= GND to Vcc IL0 ±1.0 µA Output High Voltage IOH = -2.0mA, Vcc = Vcc min VOH Output Low Voltage IOL = 4.0mA, Vcc =Vcc min VOL Vcc Active Read Current (1) /CE = VIL, 5MHZ /OE = VIH, 1MHZ V 0.45 /CE = VIL, /OE=VIH ICC2 Vcc Standby Current /CE, /RESET=Vcc±0.3V ICC3 Low Vcc Lock-Out Voltage VLKO V 18 32 4 8 40 60 mA 40 mA 2.5 V ICC1 Vcc Active Write Current (2) Notes: 2.4 mA 2.3 1. The Icc current listed is typically less than 2mA/MHz, with /OE at VIH. 2. Icc active while embedded algorithm (program or erase) is in progress 3. Maximum Icc current specifications are tested with Vcc=Vcc max ERASE AND PROGRAMMING PERFORMANCE URL :www.hbe.co.kr REV.00(October,2003) 3 HANBit Electronics Co., Ltd. HANBit HMF4M32B8V LIMITS PARAMETER MIN. Sector Erase Time UNIT TYP. MAX. 0.7 15 - Chip Erase Time COMMENTS sec 25 Excludes 00H programming prior to erasure sec Word Programming Time - 11 360 µs Chip Programming Time - 12 36 sec Excludes system-level overhead TSOP CAPACITANCE PARAMETER DESCRIPTION PARAMETER SYMBOL CIN Input Capacitance COUT Output Capacitance CIN2 Control Pin Capacitance TEST SETUP MIN MAX UNIT VIN = 0 6 7.5 pF VOUT = 0 8.5 12 pF VIN = 0 7.5 9 pF o Notes : Test conditions TA = 25 C, f=1.0 MHz. AC Characteristics ( Read Only Operations Characteristics ) Parameter Symbols speed Options Description JEDEC tAVAV Test Setup Unit Standard tRC Read Cycle Time -70r -80 -90 -120 Min 70 80 90 120 ns Max 70 80 90 120 ns Max 70 80 90 120 ns tAVQV tACC Address to Output Delay /CE =VIL /OE = VIL tELQV tCE Chip Enable to Output Delay /OE = VIL tGLQV tOE Chip Enable to Output Delay Max 30 30 35 35 ns tEHQZ tDF Chip Enable to Output High-Z Max 25 25 30 30 ns tGHQZ tDF Max 25 25 30 30 ns tAXQX tQH Output Enable to Output High-Z Output Hold Time From Addresses, /CE or /OE, Whichever Occurs First Min 0 ns 90, 120 UNIT 100 pF TEST SPECIFICATIONS TEST CONDITION 70R, 80 Output load 1TTL gate Output load capacitance,CL (Including jig capacitance) 30 Input rise and full times 5 ns 0.0-3.0 V Input timing measurement reference levels 1.5 V Output timing measurement reference levels 1.5 V Input pulse levels URL :www.hbe.co.kr REV.00(October,2003) 4 HANBit Electronics Co., Ltd. HANBit HMF4M32B8V 5.0V 2.7kΩ IN3064 or Equivalent Device Under Test CL 6.2kΩ Diodes = IN3064 or Equivalent Note : CL = 100pF including jig capacitance Erase/Program Operations PARAMETER SYMBOLS Speed Options DESCRIPTION UNIT JEDEC STANDARD 70R 80 90 120 tAVAV tWC Write Cycle Time Min 70 80 90 12 tAVWL tAS Address Setup Time Min tWLAX tAH Address Hold Time Min 45 45 45 50 ns tDVWH tDS Data Setup Time Min 35 35 45 50 ns tWHDX tDH Data Hold Time Min 0 ns tOES Output Enable Setup Time Min 0 ns Read Recover Time Before Write Min 0 ns 0 ns ns tGHWL tGHWL tELWL tCS /CE Setup Time Min 0 ns tWHEH tCH /CE Hold Time Min 0 ns tWLWH tWP Write Pulse Width Min tWHWL tWPH Write Pulse Width High Min 30 ns tWHWH1 tWHWH1 Byte Programming Operation Typ 9 µs tWHWH2 tWHWH2 Sector Erase Operation (Note1) Typ 0.7 sec Vcc set up time Min 50 µs tVCS 35 35 35 50 ns Notes : 1 . This does not include the preprogramming time 2 . This timing is only for Sector Protect operations URL :www.hbe.co.kr REV.00(October,2003) 5 HANBit Electronics Co., Ltd. HANBit HMF4M32B8V Erase/Program Operations Alternate /CE Controlled Writes PARAMETER SYMBOLS Speed Options DESCRIPTION UNIT JEDEC STANDARD -70R -80 -90 120 tAVAV tWC Write Cycle Time Min 70 80 90 12 tAVWL tAS Address Setup Time Min tWLAX tAH Address Hold Time Min 45 45 45 50 ns tDVWH tDS Data Setup Time Min 35 35 45 50 ns tWHDX tDH Data Hold Time Min 0 ns tOES Output Enable Setup Time Min 0 ns Read Recover Time Before Write Min 0 ns 0 ns ns tGHWL tGHWL tELWL tCS /CE Setup Time Min 0 ns tWHEH tCH /CE Hold Time Min 0 ns tWLWH tWP Write Pulse Width Min tWHWL tWPH Write Pulse Width High Min 30 ns tWHWH1 tWHWH1 Byte Programming Operation Typ 9 µs tWHWH2 tWHWH2 Sector Erase Operation (Note1) Typ 0.7 sec 35 35 35 50 ns Notes : 1. This does not include the preprogramming time 2 . This timing is only for Sector Protect operations READ OPERATIONS TIMING URL :www.hbe.co.kr REV.00(October,2003) 6 HANBit Electronics Co., Ltd. HANBit HMF4M32B8V RESET TIMING PROGRAM OPERATIONS TIMING Alternate /WE Controlled Writes Alternate /CE Controlled Writes URL :www.hbe.co.kr REV.00(October,2003) 7 HANBit Electronics Co., Ltd. HANBit HMF4M32B8V CHIP/BLOCK ERASE OPERATION TIMINGS DATA# POLLING TIMES DURING INTERNAL ROUTINE OPERATION URL :www.hbe.co.kr REV.00(October,2003) 8 HANBit Electronics Co., Ltd. HANBit HMF4M32B8V RY_ /BY TIMEING DURING ERASE / PROGRAM OPERATION TOGGLE# BIT DURING INTERNAL ROUTINE OPERATION URL :www.hbe.co.kr REV.00(October,2003) 9 HANBit Electronics Co., Ltd. HANBit HMF4M32B8V PACKAGE DIMENSIONS URL :www.hbe.co.kr REV.00(October,2003) 10 HANBit Electronics Co., Ltd. HANBit HMF4M32B8V <TOP VIEW> 3.4 mm MAX 1.0 ±0.1mm ORDERING INFORMATION URL :www.hbe.co.kr REV.00(October,2003) 11 HANBit Electronics Co., Ltd. HANBit HMF4M32B8V Part Number Density Org. Package HMF4M32B8V-70 16MByte 4Mx 32 72Pin –SODIMM HMF4M32B8V-80 16MByte 4Mx 32 HMF4M32B8V-90 16MByte HMF4M32B8V-120 16MByte URL :www.hbe.co.kr REV.00(October,2003) Component Vcc SPEED 8EA 3.3V 70ns 72Pin –SODIMM 8EA 3.3V 80ns 4Mx 32 72Pin –SODIMM 8EA 3.3V 90ns 4Mx 32 72Pin –SODIMM 8EA 3.3V 120ns 12 Number HANBit Electronics Co., Ltd.