HANBIT HMF51232M4V-90

HANBit
HMF51232M4V
FLASH-ROM MODULE 2MByte (512K x 32-Bit)
Part No. HMF51232M4V
GENERAL DESCRIPTION
The HMF51232M4V is a high-speed flash read only memory (FROM) module containing 524,288 words organized in a x32bit
configuration. The module consists of four 512Kx 8 FROM mounted on a 72-pin, single-sided, FR4-printed circuit board.
Commands are written to the command register using standard microprocessor write timings.
Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write cycles
also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is
similar to reading from 12.0V flash or EPROM devices.
Four chip enable inputs, (/CE_UU1, /CE_UM1, /CE_LM1, /CE_LL1) are used to enable the module’s 4 bytes independently.
Output enable (/OE) and write enable (/WE) can set the memory input and output.
When FROM module is disable condition, the module is becoming power standby mode, system designer can get low-power
design.
All module components may be powered from a single +3V DC power supply and all inputs and outputs are TTL-compatible.
FEATURES
PIN ASSIGNMENT
w Access time : 55,70, 90 and 120ns
w High-density 2MByte design
PIN
SYMBOL
PIN
SYMBOL
PIN
SYMBOL
w High-reliability, low-power design
1
Vss
25
Vcc
49
DQ17
w Single + 3V ± 0.3V power supply
2
A3
26
DQ8
50
DQ18
w Easy memory expansion
3
A2
27
DQ9
51
DQ22
wAll inputs and outputs are TTL- compatible
4
A1
28
DQ10
52
DQ21
w FR4-PCB design
5
A0
29
NC
53
DQ20
w Low profile 72-pin SIMM
6
Vcc
30
Vcc
54
DQ19
w Minimum 1,000,000 write/erase cycle
7
A11
31
/CE_LM1
55
Vcc
w Sector erases architecture
8
/OE
32
DQ15
56
A15
w Sector group protection
9
A10
33
DQ14
57
A12
w Temporary sector group unprotection
10
Vcc
34
DQ13
58
A7
w Part Identification
11
NC
35
DQ12
59
Vcc
12
/CE_LL1
36
DQ11
60
A8
13
DQ7
37
A18
61
A9
14
DQ0
38
A16
62
DQ24
15
DQ1
39
Vss
63
DQ25
16
DQ2
40
A6
64
DQ26
17
DQ6
41
Vcc
65
NC
18
DQ5
42
A5
66
/CE_UU1
19
DQ4
43
A4
67
DQ31
20
DQ3
44
Vcc
68
DQ30
HMF51232M4V : Gold Plate Lead
OPTIONS
MARKING
w Timing
55ns access
- 55
70ns access
- 70
90ns access
- 90
21
/WE
45
NC
69
DQ29
120ns access
- 120
22
A17
46
/CE_UM1
70
DQ28
23
A14
DQ23
71
DQ27
24
A13
47
48
DQ16
72
Vss
w Package
72-pin SIMM
72-PIN SIMM
TOP VIEW
M
FUNCTIONAL BLOCK DIAGRAM
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REV.02(August,2002)
1
HANBit Electronics Co., Ltd.
HANBit
HMF51232M4V
DQ0 - DQ31
A0 - A18
32
19
A0-18
/WE
DQ 0-7
U5
/OE
/CE
/CE_LL1
A0-18
/WE
DQ 8-15
U6
/OE
/CE
/CE_LM1
A0-18
/WE
DQ16-23
U7
/OE
/CE
/CE_UM1
A0-18
/WE
/WE
/OE
/OE
DQ24-31
U8
/CE
/CE_UU1
TRUTH TABLE
MODE
/OE
/CE
/WE
DQ
POWER
STANDBY
X
H
X
HIGH-Z
STANDBY
NOT SELECTED
H
L
H
HIGH-Z
ACTIVE
READ
L
L
H
Dout
ACTIVE
WRITE
X
L
L
Din
ACTIVE
Note : X means don't care
ABSOLUTE MAXIMUM RATINGS
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REV.02(August,2002)
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HANBit Electronics Co., Ltd.
HANBit
HMF51232M4V
PARAMETER
SYMBOL
RATING
VIN,OUT
-0.5V to VCC + 7.0V
Voltage with respect to ground Vcc
VCC
-0.5V to + 4.0V
Power Dissipation
Po
4W
TSTG
-65oC to +150oC
Voltage with respect to ground all other pins
Storage Temperature
Operating Temperature
TA
-55oC to +125oC
w Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these or any other conditions above those indicated
in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
SYMBOL
MIN
Vcc for ±5% device Supply Voltages
VCC
4.75V
5.25V
Vcc for ± 10% device Supply Voltages
Vcc
4.5V
5.5V
Ground
VSS
0
PARAMETER
TYP.
MAX
0
0
DC AND OPERATING CHARACTERISTICS (0oC ≤ TA ≤ 70 oC ; Vcc = 5V ± 0.5V )
PARAMETER
TEST CONDITIONS
SYMBOL
MIN
TYP
MAX
UNITS
Input Load Current
Vcc=Vcc max, VIN= Vss to Vcc
ILI
±1.0
µA
A9 Input Load Current
Vcc=Vcc max; A9 = 12.5V
ILIT
35
µA
Output Leakage Current
Vcc=Vcc max, VOUT= Vss to Vcc
IL0
±1.0
µA
Vcc Active Read Current
/CE=VIL, /OE=VIH,
ICC1
5 MHz
28
48
8
16
mA
1 MHz
Vcc Active Write Current
/CE = VIL, /OE=VIH
ICC2
60
120
mA
Vcc Standby Current
/CE= VCC±0.3V
ICC3
0.8
20
µA
ICC4
0.8
20
µA
ICC5
0.2
5
µA
Vcc Reset Current
Automatic Sleep Mode
VIH = Vcc±0.3V;
VIL = Vss±0.3V
Input Low Voltage
VIL
-0.5
0.8
V
Input High Voltage
VIH
0.7×Vcc
Vcc+0.3
V
Vcc= 3.3V
VID
11.5
12.5
V
IOL = 4.0 mA, Vcc =Vcc min
VOL
0.45
V
IOH= -0.2 mA, Vcc=Vcc min
VOH1
0.85Vcc
IOH= -100µA, Vcc=Vcc min
VOH2
Vcc-0.4
VLKO
2.3
Voltage for Autoselect and
Temporary Sector Unprotect
Output Low Voltage
V
Output High Voltage
Low Vcc Lock-Out Voltage
2.5
V
Notes:
1.
The Icc current listed is typically less than 2mA/MHz, with /OE at VIH.
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REV.02(August,2002)
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HANBit Electronics Co., Ltd.
HANBit
HMF51232M4V
2.
Maximum Icc currnet specifications are tested with Vcc= Vcc max.
3.
Icc active while Embedded Erase of Embedded Program is in progress.
4.
Not 100%tested.
5.
Automatic sleep mode enables the low power mode when addresses remain stable for tACC +30 ns.
ERASE AND PROGRAMMING PERFORMANCE
PARAMETER
MIN
TPYP
MAX
UNIT
-
0.7
15
sec
Excludes 00h programming
sec
prior to erasure
Sector Erase Time
Chip Erase Time
11
COMMENTS
Byte Programming Time
-
9
300
us
Excludes system-level
Chip Programming Time
-
4.5
13.5
sec
overhead
Notes:
1. Typical program and erase times assume the following conditions:25° C, 3.0V Vcc, 1,000,000 cycles. Additionally,
programming typicals assume checkerboard pattern.
2. Under worst case conditions of 90°C, Vcc=2.7V(3.0V for-55R), 1,000,000cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most
bytes program faster than the maximum program times listed.
4. In the pre-programming step of th Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command.
See Table 4 for further information on command definitions.
6. The device has a minimum guaranteed erase and program cycle endurance of 1,000,000 cycles.
CAPACITANCE
PARAMETER
PARAMETER
SYMBOL
CIN
TEST SETUP
TYP.
MAX
UNIT
VIN = 0
6
7.5
pF
VOUT = 0
8.5
12
pF
VIN = 0
7.5
9
pF
DESCRIPTION
Input Capacitance
COUT
Output Capacitance
CIN2
Control Pin Capacitance
Notes : Test conditions TA = 25o C, f=1.0 MHz.
TEST CONDITIONS
TEST CONDITION
-55R, -70
Output load
-90, -120
UNIT
100
pF
1 TTL gate
Output load Capacitance, CL
30
Input Rise and Fall Times
5
ns
Input Pulse Levels
0~3
V
Input timing measurement reference levels
1.5
V
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REV.02(August,2002)
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HANBit Electronics Co., Ltd.
HANBit
HMF51232M4V
Output timing measurement reference levels
1.5
V
AC CHARACTERISTICS
u Read Only Operations Characteristics
PARAMETE
-55
-70
-90
-120
UNIT
TEST
DESCRIPTION
R
MIN
SETUP
MAX
MIN
MAX
MIN
MAX
MIN
MAX
SYMBOLS
tRC
Read Cycle Time
55
tACC
/CE = VIL
70
55
90
120
ns
70
Address to Output Delay
90
120
ns
/OE = VIL
tCE
Chip Enable to Output Delay
tOE
/OE = VIL
55
70
90
120
ns
Chip Enable to Output Delay
30
30
35
50
ns
tDF
Chip Enable to Output High-Z
25
25
30
30
ns
tDF
Output Enable to Output High-Z
25
25
30
30
ns
0
ns
Output Hold Time From
Addresses,
tQ
0
0
0
/CE or /OE, Whichever Occurs
First
5.0V
2.7kΩ
IN3064
or Equivalent
Device
Under
Test
CL
6.2kΩ
Diodes = IN3064
or Equivalent
Note : CL = 100pF including jig capacitance
u Erase/Program Operations
PARAMETE
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REV.02(August,2002)
DESCRIPTION
-55
-70
5
-90
-120
UNIT
HANBit Electronics Co., Ltd.
HANBit
HMF51232M4V
MIN
TYP
MAX
MIN
90
MIN
MAX
Write Cycle Time
tAS
Address Setup Time
tAH
Address Hold Time
45
45
45
50
ns
tDS
Data Setup Time
35
35
45
50
ns
tDH
Data Hold Time
0
ns
tOES
Output Enable Setup Time
0
ns
Read Recover Time Before Write
0
ns
tCS
/CE Setup Time
0
ns
tCH
/CE Hold Time
0
ns
tWP
Write Pulse Width
tWPH
Write Pulse Width High
30
ns
tWHWH1
Programming Operation
9
µs
tWHWH2
Sector Erase Operation (Note1)
0.7
sec
Vcc set up time
50
µs
tVCS
70
MAX
tWC
tGHWL
55
MIN
120
ns
0
35
35
ns
35
50
ns
Notes :
1. This does not include the preprogramming time
2. This timing is only for Sector Protect operations
u Erase/Program Operations
Alternate /CE Controlled Writes
PARAMETE
-55
DESCRIPTION
R
MIN
-70
TYP
MIN
-90
MAX
MIN
-120
MAX
MIN
UNIT
MAX
SYMBOLS
tWC
Write Cycle Time
tAS
Address Setup Time
tAH
Address Hold Time
40
45
45
50
ns
tDS
Data Setup Time
35
35
35
50
ns
tDH
Data Hold Time
0
ns
Read Recover Time Before Write
0
ns
tWS
/WE Setup Time
0
ns
tWH
/WE Hold Time
0
ns
tCP
/CE Pulse Width
tCPH
/CE Pulse Width High
30
ns
tWHWH1
Programming Operation
9
µs
tWHWH2
Sector Erase Operation (Note)
0.7
sec
tGHEL
55
70
90
120
0
35
35
ns
ns
45
50
ns
Notes : This does not include the preprogramming time.
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REV.02(August,2002)
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HANBit
HMF51232M4V
u READ OPERATIONS TIMING
u RESET TIMING
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REV.02(August,2002)
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HANBit
HMF51232M4V
u PROGRAM OPERATIONS TIMING
u CHIP/SECTOR ERASE OPERATION TIMINGS
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REV.02(August,2002)
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HANBit Electronics Co., Ltd.
HANBit
HMF51232M4V
u DATA# POLLING TIMES(DURING EMBEDDED ALGORITHMS)
u TOGGLE# BIT TIMINGS (DURING EMBEDDED ALGORITHMS)
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REV.02(August,2002)
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HANBit Electronics Co., Ltd.
HANBit
HMF51232M4V
u SECTOR PROTECT UNPROTECT TIMEING DIAGRAM
u ALTERNATE CE# CONTROLLED WRITE OPERATING TIMINGS
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REV.02(August,2002)
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HANBit Electronics Co., Ltd.
HANBit
HMF51232M4V
PACKAGE DIMENSIONS
U5
U6
U7
U8
2.54 mm
MIN
0.25 mm MAX
1.27±0.08mm
Gold: 1.04±0.10 mm
Solder: 0.914±0.10 mm
1.27
(Solder & Gold Plating)
ODERING INFORMATION
Part Number
Density
Org.
Package
HMF51232M4V-55
2MByte
512K×32bit
72 Pin-SIMM
HMF51232M4V-70
2MByte
512K×32bit
HMF51232M4V-90
2MByte
HMF51232M4V-120
2MByte
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REV.02(August,2002)
Component
Vcc
SPEED
4EA
3.3V
55ns
72 Pin-SIMM
4EA
3.3V
70ns
512K×32bit
72 Pin-SIMM
4EA
3.3V
90ns
512K×32bit
72 Pin-SIMM
4EA
3.3V
120ns
11
Number
HANBit Electronics Co., Ltd.