HITTITE HMC268LM1

MICROWAVE CORPORATION
HMC268LM1
v03.1201
SMT MMIC LOW NOISE
AMPLIFIER, 20 - 32 GHz
AMPLIFIERS - SMT
1
Typical Applications
Features
The HMC268LM1 LNA enables
economical PCB SMT assembly for:
SMT mmWave Package
• Millimeterwave Point-to-Point Radios
15 dB Gain
• LMDS
P1dB Output Power: +13 dBm
Excellent Noise Figure: 2.6 dB
• SATCOM
Functional Diagram
General Description
The HMC268LM1 is a two stage GaAs MMIC Low
Noise Amplifier (LNA) in a SMT leadless chip carrier
package covering 20 to 32 GHz. The LM1 is a true
surface mount broadband millimeterwave package
offering low loss & excellent I/O match, preserving
MMIC chip performance. Utilizing a GaAs PHEMT
process the device offers 2.6 dB noise figure, 15 dB
gain and +13 dBm output power from a bias supply
of +4V @ 45 mA. As an alternative to chip-and-wire
hybrid assemblies the HMC268LM1 eliminates the
need for wirebonding, thereby providing a consistent connection interface for the customer. All data
is with the non-hermetic, epoxy sealed LM1 packaged LNA device mounted in a 50 ohm test fixture.
Electrical Specifications, TA = +25° C, Vdd= +4V*
Parameter
Min.
Frequency Range**
Gain
Typ.
Max.
Min.
20 - 26
11
Noise Figure
Typ.
Max.
Min.
26 - 30
14
17
2.5
3.2
13
Typ.
Max.
30 - 32
15
18
2.6
3.4
12
GHz
15
18
dB
2.8
3.8
dB
Input Return Loss
8
7
7
dB
Output Return Loss
12
8
7
dB
Reverse Isolation
26
33
23
28
23
28
dB
Output Power for 1 dB Compression (P1dB)
7
11
9
13
9
13
dBm
S a t u r a t e d O u t p u t Po w e r ( P s a t )
13
16
14
17
15
18
dBm
Output Third Order Intercept (IP3)
13
22
17
22
15
21
dBm
Supply Current (I d d)
45
50
45
50
45
* Vdd = +4V, adjust Vgg1 & Vgg2 between -2.0 to 0.0 Vdc to achieve ldd = 45 mA.
** Acceptable gain and NF performance is achievable down to 17 GHz.
1 - 30
Units
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Visit us at www.hittite.com, or Email at [email protected]
50
mA
HMC268LM1
v03.1201
MICROWAVE CORPORATION
SMT MMIC LOW NOISE
AMPLIFIER, 20 - 32 GHz
GaAs Gain
MMIC
SUB-HARMONICALLY
PUMPED
Broadband
& Return
Loss
Gain
20
MIXER 17 - 25 GHz
20
1
15
0
-5
10
-10
5
-15
-20
-25
0
10
15
20
25
30
35
15
20
FREQUENCY (GHz)
Isolation
35
30
35
30
35
0
INPUT RETURN LOSS (dB)
REVERSE ISOLATION (dB)
30
Input Return Loss
0
-10
-20
-30
-40
-50
-5
-10
-15
-20
15
20
25
30
15
35
20
FREQUENCY (GHz)
25
FREQUENCY (GHz)
Noise Figure
Output Return Loss
0
OUTPUT RETURN LOSS (dB)
5
+85 C
4
NOISE FIGURE (dB)
25
FREQUENCY (GHz)
AMPLIFIERS - SMT
15
S21
S11
S22
5
GAIN (dB)
RESPONSE (dB)
10
3
2
+25 C
-40 C
1
-5
-10
-15
-20
0
20
22
24
26
28
FREQUENCY (GHz)
30
32
34
15
20
25
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Visit us at www.hittite.com, or Email at [email protected]
1 - 31
HMC268LM1
v03.1201
MICROWAVE CORPORATION
SMT MMIC LOW NOISE
AMPLIFIER, 20 - 32 GHz
Output IP3 vs. Temperature
30
20
THIRD ORDER INTERCEPT (dBm)
1
Output P1dB vs. Temperature
18
-40C
P1dB OUTPUT (dBm)
AMPLIFIERS - SMT
16
+25C
14
12
10
8
+85C
6
4
2
-40C
25
20
+25C
15
+85C
10
0
20
22
24
26
28
30
20
32
22
24
26
28
FREQUENCY (GHz)
FREQUENCY (GHz)
PSAT vs. Temperature
20
+25C
18
16
Psat (dBm)
14
-40C
12
+85C
10
8
6
4
2
0
20
22
24
26
28
30
32
FREQUENCY (GHz)
1 - 32
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Visit us at www.hittite.com, or Email at [email protected]
30
32
MICROWAVE CORPORATION
v03.1201
HMC268LM1
SMT MMIC LOW NOISE
AMPLIFIER, 20 - 32 GHz
Absolute Maximum Ratings
+4.5 Vdc
Supply Current (ldd)
50 mA
Gate Bias Voltage (Vgg1 & 2)
-2.0 to 0.0 Vdc
DC Gate Current (lgg1 & 2)
4 mA
Input Power (RFin)
(Vdd = +4V, RF power applied <1 sec)
+15 dBm
Channel Temperature (Tc)
175 °C
Thermal Resistance ( jc)
(Channel Backside)
289 °C/W
Storage Temperature
-65 to +150° C
Operating Temperature
-40 to +85° C
AMPLIFIERS - SMT
1
Supply Voltage (Vdd)
Outline Drawing
Pin
Function
1
GND
2
Vdd
3
GND
4
RF OUT
5
GND
6
Vgg2
7
Vgg1
8
RF IN
1.
2.
3.
4.
5.
6.
MATERIAL: PLASTIC
PLATING: GOLD OVER NICKEL.
DIMENSIONS ARE IN INCHES (MILLIMETERS).
ALL TOLERANCES ARE ±0.005 (±0.13).
ALL GROUNDS MUST BE SOLDERED TO THE PCB RF GROUND.
• INDICATES PIN 1
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Visit us at www.hittite.com, or Email at [email protected]
1 - 33
MICROWAVE CORPORATION
HMC268LM1
v03.1201
SMT MMIC LOW NOISE
AMPLIFIER, 20 - 32 GHz
AMPLIFIERS - SMT
1
HMC268LM1 Evaluation PCB
LM1 Evaluation PCB
The grounded Co-Planar Wave Guide (CPWG) PCB input/output transitions allow use of Ground-Signal-Ground (GSG)
probes for testing. Suggested probe pitch is 400um (16 mils). Alternatively, the board can be mounted in a metal housing with 2.4 mm coaxial connectors.
Evaluation Circuit Board Layout Design Details
Layout Technique
Micro Strip to CPWG
Material
Rogers 4003 with 1/2 oz, Cu
Dielectric Thickness
0.008" (0.20 mm)
Microstrip Line Width
0.018" (0.46 mm)
CPWG Line Width
0.016" (0.41 mm)
CPWG Line to GND Gap
0.005" (0.13 mm)
Ground Via Hole Diameter
0.008" (0.13 mm)
C1
100 pF Capacitor, 0402 Pkg.
C2
10,000 pF Capacitor, 1206 Pkg.
LM1 Package Mounted to Evaluation PCB
1 - 34
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Visit us at www.hittite.com, or Email at [email protected]
MICROWAVE CORPORATION
v03.1201
HMC268LM1
SMT MMIC LOW NOISE
AMPLIFIER, 20 - 32 GHz
1
AMPLIFIERS - SMT
Suggested LM1 PCB Land Pattern Tolerance: ± 0.003” (± 0.08 mm)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Visit us at www.hittite.com, or Email at [email protected]
1 - 35
HMC268LM1
v03.1201
MICROWAVE CORPORATION
SMT MMIC LOW NOISE
AMPLIFIER, 20 - 32 GHz
AMPLIFIERS - SMT
1
HMC268LM1 General Biasing & Application Circuit
Optimal biasing of the HMC268LM1 SMT two stage low noise amplifier Vdd, Vgg1 & Vgg2 DC ports is described below.
The LNA schematic is repeated below. Note the recommended addition of the external bypass chip capacitors. For
additional general MMIC amplifier biasing guidance, please refer to the Hittite Microwave “MMIC Amplifier Biasing Procedure” found on page 8-8 or on www.hittite.com under the Application Note section.
Vdd (Pin 2)
C2
C1
50 W
25 W
RF IN
(PIN 8)
Recommended Component Values
RF OUT
(PIN 4)
Vds1
Vgg 1
(Pin 7)
100 pF
C2
10,000 pF
Vds2
C2 C1
C1
C1
C2
Vgg 2
(Pin 6)
IMPORTANT DC LIMITS! When biasing the HMC268LM1 please note the following:
A) Do not exceed 3.5 Vdc on internal circuit nodes Vds1 and Vds2 (internal Drain to Source
voltages). Calculate the Vds1 & 2 voltages from the LNA schematic above.
B) Do not bias Vdd, Vgg1 & Vgg2 DC ports in such a way that Vgs becomes a positive voltage
(internal Gate to Source voltage).
HMC268LM1 Biasing Schemes for Performance Trade-Offs
The biasing may be adjusted slightly to achieve either low noise with lowest DC power consumption or low noise with
highest output power. Be sure to adhere to the IMPORTANT DC LIMITS above while optimizing performance.
A) Low Noise and Low Power Consumption: Vdd = 3.5 Vdc @ ldd = 30 mA. Set Vgg1 = Vgg2.
B) Low Noise and High Output Power: Vdd = 4.0 Vdc @ ldd = 45 mA. Utilizing Vgg1 & Vgg2 nominal bias
is obtained for a typical ldd current of 30 mA for the second or “output” stage and 15 mA for the first
stage. The first step to bias the amplifier is to tune the Vgg1 = -1.0 Vdc and Vgg2 to drive 30 mA for the
full amplifier. Then Vgg1 is reduced to obtain ldd = 45 mA of current for the amplifier.
1 - 36
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Visit us at www.hittite.com, or Email at [email protected]
MICROWAVE CORPORATION
HMC268LM1
v03.1201
SMT MMIC LOW NOISE
AMPLIFIER, 20 - 32 GHz
HMC268LM1 Recommended SMT Attachment Technique
Follow these precautions to avoid permanent damage:
Cleanliness: Observe proper handling procedures to ensure
clean devices and PCBs. LM1 devices should remain in their
original packaging until component placement to ensure no
contamination or damage to RF, DC & ground contact areas.
TEMPERATURE (0C)
The HMC LM1 package was designed to be compatible with high volume surface mount PCB assembly processes.
The LM1 package requires a specific mounting pattern to
225
allow proper mechanical attachment and to optimize electrical
200
performance at millimeterwave frequencies. The PCB layout
175
pattern can be found on each LM1 product data sheet. It can
150
also be provided as an electronic drawing upon request from
Hittite Sales & Application Engineering.
125
100
75
50
25
0
1
2
3
4
5
6
7
8
TIME (min)
Static Sensitivity: Follow ESD precautions to protect against
Recommended solder reflow profile
ESD strikes.
for HMC LM1 SMT package
General Handling: Handle the LM1 package on the top with
a vacuum collet or along the edges with a sharp pair of bent tweezers. Avoid damaging the RF, DC, & ground
contacts on the package bottom. Do not apply excess pressure to the top of the lid.
Solder Materials & Temperature Profile: Follow the information contained in the application note. Hand soldering is
not recommended. Conductive epoxy attachment is not recommended.
AMPLIFIERS - SMT
1
Preparation & Handling of the LM1 Millimeterwave Package for Surface Mounting
Solder Paste
Solder paste should be selected based on the user’s experience and should be compatible with the metallization
systems used. See the LM1 data sheet Outline drawing for pin & ground contact metallization schemes.
Solder Paste Application
Solder paste is generally applied to the PCB using either a stencil printer or dot placement. The volume of solder
paste will be dependent on PCB and component layout and should be controlled to ensure consistent mechanical &
electrical performance. Excess solder may create unwanted electrical parasitics at high frequencies.
Solder Reflow
The soldering process is usually accomplished in a reflow oven but may also use a vapor phase process. A solder
reflow profile is suggested above.
Prior to reflowing product, temperature profiles should be measured using the same mass as the actual assemblies.
The thermocouple should be moved to various positions on the board to account for edge and corner effects and
varying component masses. The final profile should be determined by mounting the thermocouple to the PCB at the
location of the device.
Follow solder paste and oven vendor’s recommendations when developing a solder reflow profile. A standard profile
will have a steady ramp up from room temperature to the pre-heat temperature to avoid damage due to thermal
shock. Allow enough time between reaching pre-heat temperature and reflow for the solvent in the paste to evaporate
and the flux to completely activate. Reflow must then occur prior to the flux being completely driven off. The duration
of peak reflow temperature should not exceed 15 seconds. Packages have been qualified to withstand a peak
temperature of 2350C for 15 seconds. Verify that the profile will not expose the device to temperatures in excess of
2350C.
Cleaning
A water-based flux wash may be used.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Visit us at www.hittite.com, or Email at [email protected]
1 - 37