HITTITE HMC278MS8G

HMC278MS8G
v02.1201
MICROWAVE CORPORATION
100 mW MEDIUM POWER GaAs
MMIC AMPLIFIER, 1.7 - 3.0 GHz
AMPLIFIERS - SMT
1
Typical Applications
Features
The HMC278MS8G is ideal for:
P1dB Output Power: +20 dBm
• PCS/3G & WLAN
Single Supply: +3V to +5V
• MMDS & ISM Radios
Ultra Small 8 Lead MSOP Package
• HomeRF & BLUETOOTH
Functional Diagram
General Description
The HMC278MS8G is a 100mW GaAs MMIC
medium power amplifier covering 1.7 to 3 GHz. The
device is packaged in a low cost, surface mount 8
lead MSOP plastic package with an exposed base
paddle for improved RF ground and thermal dissipation. The self-biased amplifier provides 21 dB of
gain and +20 dBm P1dB output power while operating from a single positive supply of Vdd= +5V @
130 mA. At Vdd = +3V the gain is 19 dB with a
P1dB of +16dBm. With RF I/Os matched to 50 Ohm,
external component requirements are minimal. At
a height of 0.040” (1.0mm), the MSOP8 package
is ideal for low profile portable wireless devices.
Use the HMC278MS8G with the HMC309MS8 integrated LNA/TxRx switch front-end for BLUETOOTH
Class I, HomeRF, 802.11 WLAN, and ISM 2.4 GHz
radios.
Electrical Specification, TA = +25° C, As a Function of Vdd
Vdd = +5V
Vdd = +5V
Vdd = +3V
Parameter
Min.
Frequency Range
Gain
Max.
Min.
1.7 - 3.0
15
Gain Flatness (Over Any 200 MHz BW)
20
Typ.
Max.
Min.
2.3 - 2.5
25
16
± 0.7
21
Typ.
Max.
2.3 - 2.5
25
15
± 0.5
19
Units
GHz
23
dB
± 0.5
dB
Input Return Loss
5
10
7
10
7
10
dB
Output Return Loss
6
10
7
10
7
10
dB
Reverse Isolation
46
52
48
52
48
52
dB
13.5
19
16.5
20
12.5
16
dBm
S a t u r a t e d O u t p u t Po w e r ( P s a t )
16
21
19
22
15
18
dBm
Output Third Order Intercept (IP3)
26
32
29
32
28
32
dBm
6
dB
Output Power for 1 dB Compression (P1dB)
Noise Figure
6
Supply Current (I d d)
1 - 38
Typ.
130
6
165
130
165
125
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Visit us at www.hittite.com, or Email at [email protected]
140
mA
HMC278MS8G
v02.1201
MICROWAVE CORPORATION
100 mW MEDIUM POWER GaAs
MMIC AMPLIFIER, 1.7 - 3.0 GHz
Broadband Gain &
GaAs
PUMPED
Return
LossMMIC
@ Vdd SUB-HARMONICALLY
= +5V
P1dB
vs. VddMIXER
Bias
25
25
20
23
5
0
-5
17
15
13
11
Vdd=+5V
-10
9
-15
7
1
1.5
2
2.5
3
3.5
4
4.5
5
1.5
5
Vdd=+3V
2
FREQUENCY (GHz)
Gain vs. Temperature @ Vdd = +5V
22
22
20
20
GAIN (dB)
24
18
16
+25C
+85C
-40C
16
+25C
+85C
-40C
12
2
2.5
3
10
1.5
3.5
2
FREQUENCY (GHz)
2.5
3
3.5
FREQUENCY (GHz)
Input & Output
Return Loss vs. Vdd Bias
Reverse Isolation
vs. Vdd Bias
0
0
@ Vdd= +3V
-10
@ Vdd= +5V
ISOLATION (dB)
-5
-10
-15
-20
1.5
3.5
18
14
12
10
1.5
3
Gain vs. Temperature @ Vdd = +3V
24
14
2.5
FREQUENCY (GHz)
AMPLIFIERS - SMT
10
P1dB (dBm)
RESPONSE (dB)
19
S11
S21
S22
-20
RETURN LOSS (dB)
1
21
15
GAIN (dB)
17 - 25 GHz
2.5
FREQUENCY (GHz)
-30
-40
-50
S11 @ Vdd=+5V
S22 @ Vdd=+5V
S11 @ Vdd=+3V
S22 @ Vdd=+3V
2
-20
-60
3
3.5
-70
1.5
2
2.5
3
3.5
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Visit us at www.hittite.com, or Email at [email protected]
1 - 39
HMC278MS8G
v02.1201
MICROWAVE CORPORATION
100 mW MEDIUM POWER GaAs
MMIC AMPLIFIER, 1.7 - 3.0 GHz
Power Compression
@ 2.5 GHz, Vdd = +5V
24
24
22
22
Pout (dBm), GAIN (dB), PAE (%)
Pout (dBm), GAIN (dB), PAE (%)
20
18
16
14
12
10
8
6
Pout (dBm)
Gain (dB)
PAE (%)
4
2
0
-20 -18 -16 -14 -12 -10 -8 -6 -4 -2
0
2
4
6
20
18
16
14
12
10
8
6
Pout (dBm)
Gain (dB)
PAE (%)
4
2
0
-20 -18 -16 -14 -12 -10 -8 -6 -4 -2
8 10
PSAT vs.
Temperature @ Vdd = +5V
25
23
23
21
21
Psat (dBm)
19
17
15
13
11
+25C
+85C
-40C
9
2.5
6
8 10
3
17
15
13
11
+25C
+85C
-40C
7
5
1.5
3.5
2
2.5
3
FREQUENCY (GHz)
FREQUENCY (GHz)
Output IP3 vs. Temperature @ Vdd = +5V
GH
GH
2.0
2.5
3.0
-40 C
32.7
32.4
29.4
+25 0C
32.5
31.9
29.1
+85 0C
32.7
31.4
28.5
0
All levels in d m
1 - 40
4
19
9
7
2
2
P1dB vs.
Temperature @ Vdd = +5V
25
5
1.5
0
INPUT POWER (dBm)
INPUT POWER (dBm)
OUTPUT P1dB (dBm)
AMPLIFIERS - SMT
1
Power Compression
@ 2.0 GHz, Vdd = +5V
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Visit us at www.hittite.com, or Email at [email protected]
3.5
HMC278MS8G
v02.1201
MICROWAVE CORPORATION
100 mW MEDIUM POWER GaAs
MMIC AMPLIFIER, 1.7 - 3.0 GHz
Power Compression
@ 2.5 GHz, Vdd = +3V
24
24
22
22
20
18
16
14
12
10
8
6
Pout (dBm)
Gain (dB)
PAE (%)
4
2
0
-20 -18 -16 -14 -12 -10 -8
-6
-4
-2
0
2
4
6
20
18
16
14
12
10
8
6
Pout (dBm)
Gain (dB)
PAE (%)
4
2
0
-20 -18 -16 -14 -12 -10 -8
8
INPUT POWER (dBm)
23
21
21
OUTPUT P1dB (dBm)
25
23
19
Psat (dBm)
-4
-2
0
2
4
6
8
P1dB vs.
Temperature @ Vdd = +3V
25
17
15
13
11
+25C
+85C
-40C
19
17
15
13
11
+25C
+85C
-40C
9
7
5
1.5
-6
FREQUENCY (GHz)
PSAT vs.
Temperature @ Vdd = +3V
9
1
AMPLIFIERS - SMT
Pout (dBm), GAIN (dB), PAE (%)
Pout (dBm), GAIN (dB), PAE (%)
Power Compression
@ 2.0 GHz, Vdd = +3V
7
2
2.5
3
5
1.5
3.5
2
FREQUENCY (GHz)
2.5
3
3.5
FREQUENCY (GHz)
Output IP3 vs. Temperature @ Vdd = +3V
2.0
2.5
3.0
-40 C
27.8
27.8
25.7
+25 0C
27.7
27.5
25.5
+85 0C
27.3
26.9
24.6
0
All levels in d m
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Visit us at www.hittite.com, or Email at [email protected]
1 - 41
v02.1201
MICROWAVE CORPORATION
HMC278MS8G
100 mW MEDIUM POWER GaAs
MMIC AMPLIFIER, 1.7 - 3.0 GHz
AMPLIFIERS - SMT
1
Absolute Maximum Ratings
Supply Voltage (Vdd)
+8 Vdc
Input Power (RFin)(Vdd = +5V)
+10 dBm
Channel Temperature (Tc)
175 °C
Thermal Resistance ( jc)
(Channel Backside)
65 °C/W
Storage Temperature
-65 to +150° C
Operating Temperature
-55 to +85° C
Note: 100 pF bypass capacitor to ground on Vdd line
is recommended.
Outline Drawing
1. MATERIAL:
A. PACKAGE BODY - LOW STRESS INJECTION-MOLDED PLASTIC.
B. LEADFRAME & PADDLE MATERIAL: COPPER ALLOY
2. PLATING: LEAD & PADDLE - TIN SOLDER PLATE
3. DIMENSIONS ARE IN INCHES (MILLIMETER). UNLESS OTHERWISE
SPECIFIED, ALL TOL. ARE ± 0.005 (± 0.13).
4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
1 - 42
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Visit us at www.hittite.com, or Email at [email protected]
HMC278MS8G
v02.1201
MICROWAVE CORPORATION
100 mW MEDIUM POWER GaAs
MMIC AMPLIFIER, 1.7 - 3.0 GHz
1
AMPLIFIERS - SMT
Recommended PCB Layout for HMC278MS8G
The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50
ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane
similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes.
The evaluation circuit board shown is available from Hittite upon request.
Evaluation Circuit Board Layout Design Details
Item
Description
J1, J2
PC Mount SMA Connector
J3, J4
DC Pin
C1
10,000 pF Capacitor, 0603 Pkg.
U1
HMC278MS8G Amplifier
PCB*
103600 Evaluation Board
*Circuit Board Material: Roger 4350
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Visit us at www.hittite.com, or Email at [email protected]
1 - 43