HMC-APH633 v03.0209 LINEAR & POWER AMPLIFIERS - CHIP 3 GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 71 - 76 GHz Typical Applications Features This HMC-APH633 is ideal for: Gain: 13 dB • Short Haul / High Capacity Links P1dB: +20 dBm • Wireless LAN Bridges Supply Voltage: +4V • Military & Space 50 Ohm Matched Input/Output • E-Band Communication Systems Die Size: 2.47 x 1.60 x 0.05 mm Functional Diagram General Description The HMC-APH633 is a two stage GaAs HEMT MMIC Medium Power Amplifier which operates between 71 and 76 GHz. The HMC-APH633 provides 13 dB of gain, and an output power of +20 dBm at 1 dB compression from a +4V supply voltage. All bond pads and the die backside are Ti/Au metallized and the amplifier device is fully passivated for reliable operation. The HMC-APH633 GaAs HEMT MMIC Medium Power Amplifier is compatible with conventional die attach methods, as well as thermocompression and thermosonic wire bonding, making it ideal for MCM and hybrid microcircuit applications. All data shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes. Electrical Specifi cations, TA = +25° C, Vdd1=Vdd2 = 4V, Idd1+Idd2 = 240 mA [2] Parameter Min. Frequency Range Gain 9 Typ. Max. GHz 13 dB Input Return Loss 8 dB Output Return Loss 10 dB Output power for 1dB Compression (P1dB) 20 dBm Supply Current (Idd1+Idd2) 240 mA [1] Unless otherwise indicated, all measurements are from probed die. [2] Adjust Vgg1=Vgg2 between -1V to +0.3V (typ. -0.1V) to achieve Idd total = 240 mA 3 - 220 Units 71-76 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-APH633 v03.0209 GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 71 - 76 GHz Fixtured Pout vs. Frequency Linear Gain vs. Frequency 22 15 14 21 13 11 10 9 8 19 18 17 7 16 6 5 15 68 70 72 74 76 78 70 80 71 FREQUENCY (GHz) Input Return Loss vs. Frequency 73 74 75 Output Return Loss vs. Frequency 0 0 -2 -2 -4 -4 RETURN LOSS (dB) RETURN LOSS (dB) 72 FREQUENCY (GHz) -6 -8 -10 -12 -6 -8 -10 -12 -14 -14 -16 -16 -18 -18 68 70 72 74 76 FREQUENCY (GHz) 78 80 68 70 72 74 76 78 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 80 LINEAR & POWER AMPLIFIERS - CHIP P1dB (dBm) GAIN (dB) 3 20 12 3 - 221 HMC-APH633 v03.0209 GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 71 - 76 GHz Absolute Maximum Ratings LINEAR & POWER AMPLIFIERS - CHIP 3 Drain Bias Voltage +4.5V Gate Bias Voltage -0.8 to +0.3V RF Input 14 dBm Thermal Resistance (Channel to die bottom) 61.6 °C/W Channel Temperature 180 °C Storage Temperature -65 °C to +150 °C Operating Temperature -55 °C to +85 °C Drain Bias Current (Idd1) 100 mA Drain Bias Current (Idd2) 200 mA Outline Drawing Die Packaging Information [1] Standard Alternate GP-1 (Gel Pack) [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. 3 - 222 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM]. 2. BACKSIDE METALLIZATION: GOLD. 3. BACKSIDE METAL IS GROUND. 4. BOND PAD METALLIZATION: GOLD. 5. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 6. OVERALL DIE SIZE ±.002” For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-APH633 v03.0209 GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 71 - 76 GHz Pad Descriptions Function Description 1 RFIN This pad is AC coupled and matched to 50 Ohms. 2, 4 Vgg1, Vgg2 Gate control voltage for the amplifier adjust to achieve Idd total = 240 mA ± 10mA. See assembly for required external components. 3, 5 Vdd1, Vdd2 Power Supply Voltage for the amplifier. See assembly for required external components. 6 RFOUT This pad is AC coupled and matched to 50 Ohms. Die Bottom GND Die bottom must be connected to RF/DC ground. Interface Schematic For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 3 LINEAR & POWER AMPLIFIERS - CHIP Pad Number 3 - 223 HMC-APH633 v03.0209 GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 71 - 76 GHz Assembly Diagram LINEAR & POWER AMPLIFIERS - CHIP 3 Note 1: Bypass caps should be 100 pF (approximately) ceramic (single-layer) placed no farther than 30 mils from the amplifier Note 2: Best performance obtained from use of <10 mil (long) by 3 by 0.5mil ribbons on input and output. 3 - 224 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-APH633 v03.0209 GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 71 - 76 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). Microstrip substrates should be placed as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). 0.05mm (0.002”) Thick GaAs MMIC Ribbon Bond 3 0.076mm (0.003”) RF Ground Plane Handling Precautions Follow these precautions to avoid permanent damage. 0.127mm (0.005”) Thick Alumina Thin Film Substrate Storage: All bare die are placed in either Waffle or Gel based ESD protecFigure 1. tive containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding RF bonds made with 0.003” x 0.0005” ribbon are recommended. These bonds should be thermosonically bonded with a force of 40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a nominal stage temperature of 150 °C. A minimum amount of ultrasonic energy should be applied to achieve reliable bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm). For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com LINEAR & POWER AMPLIFIERS - CHIP The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 3 - 225