BYV12, BYV13, BYV14, BYV15, BYV16 Vishay Semiconductors Fast Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed package • Low reverse current • Soft recovery characteristics • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC 949539 • Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA APPLICATIONS Case: SOD-57 • Fast rectification and switching diode for example for TV-line output circuits and switch mode power supply Terminals: plated axial leads, solderable per MIL-STD-750, method 2026 Polarity: color band denotes cathode end Mounting position: any Weight: approx. 369 mg PARTS TABLE PART TYPE DIFFERENTIATION PACKAGE BYV12 VR = 100 V; IFAV = 1.5 A SOD-57 BYV13 VR = 400 V; IFAV = 1.5 A SOD-57 BYV14 VR = 600 V; IFAV = 1.5 A SOD-57 BYV15 VR = 800 V; IFAV = 1.5 A SOD-57 BYV16 VR = 1000 V; IFAV = 1.5 A SOD-57 ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION Reverse voltage = repetitive peak reverse voltage Peak forward surge current See electrical characteristics PART SYMBOL VALUE UNIT BYV12 VR = VRRM 100 V BYV13 VR = VRRM 400 V BYV14 VR = VRRM 600 V BYV15 VR = VRRM 800 V BYV16 VR = VRRM 1000 V IFSM 40 A tp = 10 ms, half sine wave IFRM 9 A ϕ = 180° IFAV 1.5 A I(BR)R = 0.4 A ER 10 mJ Tj = Tstg - 55 to + 175 °C Repetitive peak forward current Average forward current Non repetitive reverse avalanche energy Junction and storage temperature range MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified) PARAMETER Junction ambient www.vishay.com 124 TEST CONDITION SYMBOL VALUE Lead length l = 10 mm, TL = constant RthJA 45 K/W On PC board with spacing 25 mm RthJA 100 K/W For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] UNIT Document Number: 86039 Rev. 1.7, 30-Jul-10 BYV12, BYV13, BYV14, BYV15, BYV16 Fast Avalanche Sinterglass Diode Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. IF = 1 A VF - - 1.5 V VR = VRRM IR - 1 5 μA μA Forward voltage Reverse current Reverse recovery time PART UNIT VR = VRRM, Tj = 150 °C IR - 60 150 IF = 0.5 A, IR = 1 A, iR = 0.25 A trr - - 300 ns IF = 1 A, dI/dt = 5 A/μs Qrr - - 200 nC Reverse recovery charge 120 10 l l 100 IF - Forward Current (A) RthJA - Ther. Resist. Junction/Ambient (K/W) TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 80 TL = constant 60 40 Tj = 25 °C 0.1 0.01 20 0 0.001 0 5 10 15 20 25 30 l - Lead Length (mm) 949101 0 1.0 1.5 2.0 2.5 3.0 VF - Forward Voltage (V) Fig. 3 - Forward Current vs. Forward Voltage 240 200 VRRM 160 BYV12 VR BYV14 120 BYV16 80 BYV13 BYV15 40 IFAV - Average Forward Current (A) 1.6 RthJA = 100 K/W VR = VRRM half sinewave 1.4 1.2 RthJA = 45 K/W I = 10 mm 1.0 0.8 0.6 RthJA = 100 K/W PCB: d = 25 mm 0.4 0.2 0 0 0 949517 0.5 16375 Fig. 1 - Typ. Thermal Resistance vs. Lead Length Tj - Junction Temperature (°C) Tj = 175 °C 1 200 400 600 800 1000 VR, VRRM - Rev./Rep. Peak Rev. Voltage (V) Fig. 2 - Junction Temperature vs. Reverse/Repetitive Peak Reverse Voltage Document Number: 86039 Rev. 1.7, 30-Jul-10 0 16376 20 40 60 80 100 120 140 160 180 Tamb - Ambient Temperature (°C) Fig. 4 - Max. Average Forward Current vs. Ambient Temperature For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 125 BYV12, BYV13, BYV14, BYV15, BYV16 Vishay Semiconductors Fast Avalanche Sinterglass Diode PR - Reverse Power Dissipation (mW) 1000 IR - Reverse Current (μA) VR = VRRM 100 10 1 25 16377 50 75 100 125 150 450 VR = VRRM 400 350 300 PR-Limit at 100 % VR 250 200 150 PR-Limit at 80 % VR 100 50 0 175 25 Tj - Junction Temperature (°C) 50 Fig. 5 - Reverse Current vs. Junction Temperature 75 100 125 150 175 Tj - Junction Temperature (°C) 16378 Fig. 6 - Max. Reverse Power Dissipation vs. Junction Temperature 40 CD - Diode Capacitance (pF) f = 1 MHz 35 30 25 20 15 10 5 0 0.1 1 10 100 VR - Reverse Voltage (V) 16379 Zthp - Thermal Resist. for Pulse Cond. (K/W) Fig. 7 - Diode Capacitance vs. Reverse Voltage 1000 VRRM = 1000 V RthJA = 100 K/W 100 Tamb = 25 °C tp/T = 0.5 45 °C 50 °C 0.2 10 0.1 100 °C 0.02 70 °C Single pulse 0.01 1 10-5 949522 10-4 10-3 10-2 10-1 100 101 tp - Pulse Length (s) 100 101 IFRM - Repetitive Peak Forward Current (A) Fig. 8 - Thermal Response www.vishay.com 126 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 86039 Rev. 1.7, 30-Jul-10 BYV12, BYV13, BYV14, BYV15, BYV16 Fast Avalanche Sinterglass Diode Vishay Semiconductors 3.6 (0.142) max. 0.82 (0.032) max. PACKAGE DIMENSIONS in millimeters (inches): SOD-57 26 (1.024) min. 4 (0.157) max. 26 (1.024) min. 20543 Document Number: 86039 Rev. 1.7, 30-Jul-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 127 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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