VISHAY BYV38

BYV37, BYV38
Vishay Semiconductors
Fast Avalanche Sinterglass Diode
FEATURES
• Glass passivated junction
• Hermetically sealed package
• Low reverse current
• Soft recovery characteristics
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
949539
• Halogen-free according to IEC 61249-2-21
definition
MECHANICAL DATA
APPLICATIONS
Case: SOD-57
• Fast “soft recovery” rectification diode
Terminals: plated axial leads, solderable per MIL-STD-750,
method 2026
Polarity: color band denotes cathode end
Mounting position: any
Weight: approx. 369 mg
PARTS TABLE
PART
TYPE DIFFERENTIATION
PACKAGE
BYV37
VR = 800 V; IFAV = 2 A
SOD-57
BYV38
VR = 1000 V; IFAV = 2 A
SOD-57
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Reverse voltage
See electrical characteristics
Peak forward surge current
PART
SYMBOL
VALUE
UNIT
BYV37
VR = VRRM
800
V
BYV38
VR = VRRM
1000
V
IFSM
50
A
IFAV
2
A
ER
10
mJ
Tj = Tstg
- 55 to + 175
°C
tp = 10 ms, half sine wave
Average forward current
Non repetitive reverse avalanche
energy
I(BR)R = 0.4 A
Junction and storage temperature
range
MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Junction ambient
TEST CONDITION
SYMBOL
VALUE
Lead length l = 10 mm, TL = constant
RthJA
45
UNIT
K/W
On PC board with spacing 25 mm
RthJA
100
K/W
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
Reverse current
Reverse recovery time
Diode capacitance
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128
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
IF = 1 A
PART
VF
-
1
1.1
UNIT
V
VR = VRRM
IR
-
-
5
μA
μA
VR = VRRM, Tj = 150 °C
IR
-
-
150
IF = 0.5 A, IR = 1 A, iR = 0.25 A
trr
-
-
300
ns
VR = 4 V, f = 1 MHz
CD
-
15
-
pF
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 86045
Rev. 1.7, 31-Mar-10
BYV37, BYV38
Fast Avalanche Sinterglass Diode
Vishay Semiconductors
10
120
100
IF - Forward Current (A)
RthJA - Ther. Resist. Junction/Ambient (K/W)
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
80
60
l
l
40
Tj = 25 °C
0.1
0.01
20
TL = constant
0.001
0
0
5
10
15
20
25
0
30
l - Lead Length (mm)
949552
0.4
0.8
1.2
1.6
Fig. 4 - Forward Current vs. Forward Voltage
2.5
IFAV - Average Forward Current (A)
500
VR = VRRM
450
400
350
RthJA = 45 K/W
300
250
100 K/W
200
160 K/W
150
100
BYV38
50
BYV37
VR = VRRM
half sinewave
2.0
RthJA ≤ 45 K/W
I = 10 mm
1.5
1.0
RthJA ≤ 100 K/W
PCB: d = 25 mm
0.5
0
0
25
50
75
100
125
150
0
175
Tj - Junction Temperature (°C)
15774
20
40
60
80 100 120 140 160 180
Tamb - Ambient Temperature (°C)
16344
Fig. 2 - Max. Reverse Power Dissipation vs. Junction Temperature
Fig. 5 - Max. Average Forward Current vs. Ambient Temperature
35
1000
f = 1 MHz
CD - Diode Capacitance (pF)
IR - Reverse Current (A)
VR = VRRM
100
10
1
25
15775
2.0
VF - Forward Voltage (V)
16343
Fig. 1 - Max. Thermal Resistance vs. Lead Length
PR - Reverse Power Dissipation (mW)
Tj = 175 °C
1
50
75
100
125
150
25
20
15
10
Tj - Junction Temperature (°C)
5
0
0.1
175
Fig. 3 - Max. Reverse Current vs. Junction Temperature
Document Number: 86045
Rev. 1.7, 31-Mar-10
30
15776
1
10
100
VR - Reverse Voltage (V)
Fig. 6 - Typ. Diode Capacitance vs. Reverse Voltage
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
129
BYV37, BYV38
Vishay Semiconductors
Fast Avalanche Sinterglass Diode
3.6 (0.142) max.
0.82 (0.032) max.
PACKAGE DIMENSIONS in millimeters (inches): SOD-57
26 (1.024) min.
4 (0.157) max.
26 (1.024) min.
20543
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130
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 86045
Rev. 1.7, 31-Mar-10
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Vishay
Disclaimer
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Document Number: 91000
Revision: 11-Mar-11
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