P NP S I L I C O N T RA N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HA114E █ SWITCHING CIRCUIT，INVERTER， INTERFACE CIRCUIT，DRIVER CIRCUIT █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-92S T stg ——Storage Temperature………………………… -55~150℃ T j ——Junction Temperature…………………………………150℃ PC——Collector Dissipation…………………………………300mW 1―Emitter，E 2―Collector，C 3―Base，B VCBO——Collector-Base Voltage………………………………-50V VCEO——Collector-Emitter Voltage……………………………-50V V EBO ——Emitter-Base Voltage………………………………-10V I C ——Collector Current……………………………………-100mA █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions BVCBO Collector-Base Breakdown Voltage -50 V IC=-10μA, IE=0 BVCEO Collector-Emitter Breakdown Voltage -50 V IC=-0.1mA, IB=0 ICBO Collector Cut-off Current -0.1 μA VCB=-40V, IE=0 ICEO Collector Cut-off Current -0.5 μA VCE=-40V, IB=0 IEBO Emitter Cut-off Current -360 μA VEB=-5V, IC=0 HFE DC Current Gain VCE(sat) -195 -250 VCE=-5V, IC=-5mA 30 Collector- Emitter Saturation Voltage -0.1 -0.3 V IC=-10mA, IB=-0.5mA VI（off） Input Off Voltage -0.8 -1.1 -1.5 V VCE=-5V, IC=-0.1mA VI（on） Input On Voltage -1.0 -2.0 -4.0 V VCE=-0.2V, IC=-10mA R1 Input Resistor 7.0 10 13 Kohm R2/R1 Resistor Ratio 0.8 1.0 1.2 fT Current Gain-Bandwidth Product 250 MHz VCE=-10V, IC=-5mA Shantou Huashan Electronic Devices Co.,Ltd. HA114E