NPN S I L I C O N T RA N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H639 █ APPLICATIONS Switching And Amplifier Application. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-92 T stg ——Storage Temperature………………………… -55~150℃ T j ——Junction Temperature…………………………………150℃ P C ——Collector Dissipation…………………………………1W 1―Emitter，E 2―Collector，C 3―Base，B VCBO——Collector-Base Voltage………………………………100V VCEO——Collector-Emitter Voltage……………………………80V V EB O ——Emitter-Base Voltage………………………………5V IC——Collector Current……………………………………………1A Ib——Base Current……………………………………………100mA █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol BVCBO Characteristics Min Collector-Base Breakdown Voltage 80 HFE（1） DC Current Gain 25 HFE（2） DC Current Gain 40 HFE（3） DC Current Gain 25 VCE(sat) Collector- Emitter Saturation Voltage VBE(on) Base-Emitter On Voltage Typ Max Unit V Test Conditions IC=10mA, IE=0 VCE=2V, IC=5mA VCE=2V, IC=150mA 250 VCE=2V, IC=500mA 0.5 V IC=500mA, IB=50mA 1 V VCE=2V, IC=500mA ICBO Collector Cut-off Current 100 nA VCB=30V, IE=0 IEBO Emitter Cut-off Current 100 nA VEB=5V, IC=0 fT Current Gain-Bandwidth Product 100 MHz VCE=5V, IC=10mA ,f=50MHz Shantou Huashan Electronic Devices Co.,Ltd. H639