NPN DIGITAL T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HC114Y █ APPLICATIONS Switching Circuit，Interface Circuit． █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-92S T stg ——Storage Temperature………………………… -55~150℃ T j ——Junction Temperature…………………………………150℃ PC——Collector Dissipation…………………………………300mW 1―Emitter，E 2―Collector，C 3―Base，B VCBO ——Collector-Base Voltage………………………………50V VCEO ——Collector-Emitter Voltage……………………………50V VE B O ——Emitter -Base Voltage………………………………6V I C ——Collector Current …………………………………… 100mA █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions BVCBO Collector-Base Breakdown Voltage ５０ Ｖ IC=10μA, BVCEO Collector-Emitter Breakdown Voltage ５０ Ｖ IC=1mA, IE=0 IB=0 ICBO Collector Cut-off Current ０．１ ICEO Collector Cut-off Current ０．５ μＡ VCB=40V, IE=0 μＡ VCE=40V, IB=0 IEBO Emitter Cut-off Current ６７ ８８ １２５ μＡ VEB=5V, IC=0 HFE DC Current Gain ７０ VCE=5V, IC=5mA ０．１ ０．３ Ｖ IC=10mA, IB=0.5mA ＶＩ（ｏｆｆ） Ｉｎｐｕｔ Ｏｆｆ Ｖｏｌｔａｇｅ ０．５ ０．７ ０．９ Ｖ VCE=5V, IC=0.1mA ＶＩ（ｏｎ） R1 ０．７ ７．０ １．０ １０ ２．０ １３ VCE(sat) Collector- Emitter Saturation Voltage R1/ R2 fT Cob Ｉｎｐｕｔ Ｏｎ Ｖｏｌｔａｇｅ Ｉｎｐｕｔ Ｒｅｓｉｓｔｏｒ Ｒｅｓｉｓｔｏｒ Ｒａｔｉｏ Current Gain-Bandwidth Product Output Capacitance ０．１９３ ０．２１３ ０．２３４ ２５０ ３．７ Ｖ VCE=0.2V, IC=5mA Ｋｏｈｍ ＭＨｚ VCE=10V, IC=5mA ｐＦ VCB=10V, f=1ＭＨｚ Shantou Huashan Electronic Devices Co.,Ltd. HC114Y