P N P S I L I C O N T RAN S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HA92 █ HIGH VOLTAGE TRANSISTOR █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-92 T stg ——Storage Temperature………………………… -55~150℃ T j ——Junction Temperature…………………………………150℃ PC——Collector Dissipation…………………………………625mW 1―Emitter，E 2―Base，B 3―Collector，C VCBO——Collector-Base Voltage………………………………-300V VCEO——Collector-Emitter Voltage……………………………-300V V EBO ——Emitter-Base Voltage………………………………-5V I C ——Collector Current……………………………………-500mA █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min BVCBO Collector-Base Breakdown Voltage BVCEO Typ Max Unit Test Conditions -300 V IC=-100μA, IE=0 Collector-Emitter Breakdown Voltage -300 V IC=-1mA, IB=0 BVEBO Emitter-Base Breakdown Voltage -5 V IE=-100μA，IC=0 ICBO Collector Cut-off Current -250 nA VCB=-200V, IE=0 IEBO Emitter-Base Cut-off Current -100 nA VEB=-3V, IC=0 ICES Collector Cut-off Current -100 nA VCE=-300V, VBE=0 HFE（1） DC Current Gain 25 VCE=-10V, IC=-1mA HFE（2） 40 VCE=-10V, IC=-10mA HFE（3） 50 VCE=-10V, IC=-30mA VCE(sat1) Collector- Emitter Saturation Voltage VCE(sat2) VBE(sat1) Base-Emitter Saturation Voltage fT Current Gain-Bandwidth Product 50 -0.5 V IC=-20mA, IB=-2mA -1 V IC=-60mA, IB=-6mA -0.9 V IC=-20mA, IB=-2mA VCE=-20V, IC=-10mA F=100MHz MHz