N P N S I L I C O N T RAN S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H9014 █ PRE-AMPLIFIER，LOW LEVEL & LOW NOISE █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-92 T stg ——Storage Temperature………………………… -55~150℃ T j ——Junction Temperature…………………………………150℃ PC——Collector Dissipation…………………………………450mW 1―Emitter，E 2―Base，B 3―Collector，C VCBO——Collector-Base Voltage………………………………50V VCEO——Collector-Emitter Voltage……………………………45V V EB O ——Emitter-Base Voltage………………………………5V I C ——Collector Current……………………………………100mA █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics ICBO Max Unit Test Conditions Collector Cut-off Current 0.05 μA VCB=30V, IE=0 IEBO Emitter Cut-off Current 0.05 μA VEB=5V, IC=0 HFE(1) DC Current Gain VCE(sat) Collector- Emitter Saturation Voltage 0.3 V IC=100mA, IB=5mA VBE(sat) Base-Emitter Saturation Voltage 1.0 V IC=100mA, IB=5mA BVCBO Collector-Base Breakdown Voltage 50 V IC=100μA, IE=0 BVCEO Collector-Emitter Breakdown Voltage 45 V IC=1mA, IB=0 BVEBO Emitter-Base Breakdown Voltage 5 V IE=100μA，IC=0 pF VCB=10V, IE=0，f=1MHz Cob fT Min Typ 60 Output Capacitance 2.2 Current Gain-Bandwidth Product 150 VCE=5V, IC=1mA 800 270 3.5 MHz VCE=5V, IC=10mA █ hFE Classification A B C D 60—150 100—300 200—600 400—800 Shantou Huashan Electronic Devices Co.,Ltd. H9014