NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H2222A █ APPLICATIONS General Purpose Transistors. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-92 T stg ——Storage Temperature………………………… -55~150℃ T j ——Junction Temperature…………………………………150℃ PC——Collector Dissipation…………………………………625mW 1―Emitter，E 2―Base，B 3―Collector，C VCBO ——Collector-Base Voltage………………………………75V VCEO ——Collector-Emitter Voltage……………………………40V VE B O ——Emitter -Base Voltage………………………………6V I C ——Collector Current …………………………………… 600mA █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions BVCBO Collector-Base Breakdown Voltage ７５ Ｖ BVCEO Collector-Emitter Breakdown Voltage ４０ Ｖ BVEBO Emitter-Base Breakdown Voltage ６ Ｖ １００ ４００ IE=10μA，IC=0 VCE=10V, IC=150mA ０．３ Ｖ IC=150mA, IB=15mA ｎＡ VCB=60V, IE=0 ｎＡ VEB=3V, IC=0 HFE DC Current Gain VCE(sat) Collector- Emitter Saturation Voltage ICBO Collector Cut-off Current １０ IEBO Emitter Cut-off Current fT Cob Current Gain-Bandwidth Product ３００ １０ ８ Output Capacitance IC=10μA, IE=0 IC=10mA, IB=0 ＭＨｚ VCE=20V, IC=20mA ｐＦ VCB=10V, IE=0，f=1ＭＨｚ