Shantou Huashan Electronic Devices Co.,Ltd. HBT151 Silicon Controlled Rectifier █ Features * Repetitive Peak Off-State Voltage : 600V * R.M.S On-State Current(IT(RMS)=12A) * Average On-State Current (I T(AV) =7.5A) * Non-isolated Type █ General Description Passivated thyristors in a plastic envelope, intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching. █ Absolute Maximum Ratings（Ta=25℃ ｕｎｌｅｓｓ ｏｔｈｅｒｗｉｓｅ ｓｐｅｃｉｆｉｅｄ） T s t g ——Storage Temperature ------------------------------------------------------ －40~150℃ T j ——Operating Junction Temperature --------------------------------------------------- 125℃ VDRM ——Repetitive Peak Off-State Voltage -------------------------------------------------------------------- 600V IT（RMS）——R.M.S On-State Current（all conduction angles）----------------------------------------------12A IT(AV) ——Average On-State Current (Half Sine Wave : TC = 109 °C) ----------------------------------------7.5A ITSM ——Surge On-State Current (1/2 Cycle, 50Hz, Sine Wave, Non-repetitive) -------------------------- 100A I2 t ——Circuit Fusing Considerations(t = 10ms) ------------------------------------------------------------- 50A2 s PGM ——Forward Peak Gate Power Dissipation (Ta=25℃） --------------------------------------------------- 5W PG(AV) ——Forward Average Gate Power Dissipation (over any 20 ms period） ----------------------------0.5W IFGM ——Forward Peak Gate Current -------------------------------------------------------------------------------- 2A VRGM ——Reverse Peak Gate Voltage ------------------------------------------------------------------------------- 5V Shantou Huashan Electronic Devices Co.,Ltd. HBT151 █ Electrical Characteristics （Ta=25℃ ｕｎｌｅｓｓ ｏｔｈｅｒｗｉｓｅ ｓｐｅｃｉｆｉｅｄ） Symbol IDRM Items Min. Typ. Repetitive Peak Off-State Current Max. Unit Conditions VAK =VDRM uA Tc=25℃ Tc=125℃ V ITM=23A,tp=380µs VTM Peak On-State Voltage (1) 20 500 1.75 IGT Gate Trigger Current（2） 15 mA VAK =12V(DC), RL =10 ohm VG T Gate Trigger Voltage (2) 1.5 V VAK =12V(DC), RL =10 ohm Tc=25℃ VGD IH Non-Trigger Gate Voltage Holding Current Rth(j-c) Thermal Resistance Rth(j-a) Thermal Resistance dv/dt V 0.2 Critical Rate of Rise Off-state Voltage Tc=125℃ IT=100mA,Gate open, mA Tc=25℃ 20 1.3 60 50 ℃/W Junction to Case ℃/W Junction to Ambient V/µs Linear slope up to VD=VDRM67% Gate open Tj=125℃ 1. Forward current applied for 1 ms maximum duration,duty cycle ≤1%. 2. RGK current is not included in measurement █ Performance Curves VAK =12V, RL =100 ohm Shantou Huashan Electronic Devices Co.,Ltd. █ Performance Curves HBT151 Shantou Huashan Electronic Devices Co.,Ltd. █ Performance Curves HBT151