HUASHAN HCP10C60

Shantou Huashan Electronic Devices Co.,Ltd.
HCP10C60
Silicon Controlled Rectifier
█　Features
* Repetitive Peak Off-State Voltage : 600V
* R.M.S On-State Current(IT(RMS)=10A)
* Low On-State Voltage (1.4V(Typ.)@ ITM)
* Non-isolated Type
█　General Description
Standard gate triggering SCR is suitable for the application where
requiring high bi-directional blocking voltage capability and also
suitable for over voltage protection,motor control cicuit in power
tool,inrush current limit circuit and heating control system.
█ Absolute Maximum Ratings（Ta=25℃　ｕｎｌｅｓｓ　ｏｔｈｅｒｗｉｓｅ　ｓｐｅｃｉｆｉｅｄ）　T s t g ——Storage Temperature ------------------------------------------------------ －40~125℃
T j ——Operating Junction Temperature ---------------------------------------------- －40~125℃　VDRM ——Repetitive Peak Off-State Voltage -------------------------------------------------------------------- 600V
IT （RMS）——R.M.S On-State Current（180ºConduction Angles）---------------------------------------- 10A
IT(AV) ——Average On-State Current (Half Sine Wave : TC = 111 °C) ----------------------------------------6.4A
ITSM ——Surge On-State Current (1/2 Cycle, 60Hz, Sine Wave, Non-repetitive) -------------------------- 110A
I2 t ——Circuit Fusing Considerations(t = 8.3ms) ------------------------------------------------------------
60A2 s
PGM ——Forward Peak Gate Power Dissipation (Ta=25℃）　---------------------------------------------------
5W
PG(AV) ——Forward Average Gate Power Dissipation (Ta=25℃，ｔ＝８．３ｍｓ）　---------------------------------0.5W
IFGM ——Forward Peak Gate Current -------------------------------------------------------------------------------- 2A
VRGM ——Reverse Peak Gate Voltage ------------------------------------------------------------------------------- 5V
HCP10C60
Shantou Huashan Electronic Devices Co.,Ltd.
█ Electrical Characteristics （Ta=25℃　ｕｎｌｅｓｓ　ｏｔｈｅｒｗｉｓｅ　ｓｐｅｃｉｆｉｅｄ）
Symbol
IDRM
Items
Min.
Repetitive Peak Off-State
Current
Typ.
Max.
Unit
Conditions
VAK =VDRM
uA
Ta=25℃　Ta=125℃
V
ITM=20A,tp=380µs
VTM
Peak On-State Voltage (1)
10
200
1.6
IGT
Gate Trigger Current（2）
15
mA
VAK =6V(DC), RL =10 ohm
VG T
Gate Trigger Voltage (2)
1.5
V
VAK =6V(DC), RL =10 ohm
Ta=25℃
VGD
IH
Non-Trigger Gate Voltage
V
0.2
Holding Current
VAK =12V, RL =100 ohm
Ta=125℃
IT=100mA,Gate open,
mA
Ta=25℃
20
Rth(j-c)
Thermal Resistance
1.3
℃/W
Junction to Case
Rth(j-a)
Thermal Resistance
60
℃/W
Junction to Ambient
V/µs
Linear slope up to VD=VDRM67%
Gate open
Tj=125℃
dv/dt
Critical Rate of Rise Off-state
Voltage
200
1. Forward current applied for 1 ms maximum duration,duty cycle ≤1%.
2. RGK current is not included in measurement
█　Performance Curves
FIGURE 2 –Maximum CaseTemperture
Gate Voltage (v)
Max. Allowable Case Temperture (°c)
FIGURE 1 – Gate Characteristics
Gate Current (mA)
Average On-State Current (mA)
Shantou Huashan Electronic Devices Co.,Ltd.
HCP10C60
FIGURE 4-Thermal Response
On-State Current(A)
Transient Thermal Imperdance (°c)
FIGURE 3-Typical Forward Voltage(V)
On-State Voltage (V)
Time (sec)
FIGURE 5-Typical Gate Trigger Voltage VS
FIGURE 6-Typical Gate Trigger Current VS
Junction Temperature
Junction Temperature
Junction Temperature (°C)
Junction Temperature (°C)
Junction Temperature (°C)
Dissipation (W)
FIGURE 8-Power Dissipation
Max. Average Power
FIGURE 7-Typical Holding Current
Average On-State Current (A)