Shantou Huashan Electronic Devices Co.,Ltd. HCR100 Series Sensitive Gate Silicon Controlled Rectifiers █ Features * Repetitive Peak Off-State Voltage : 400V thru 600V * R.M.S On-State Current(IT(RMS)=0.8A) * Low On-State Voltage (1.2V(Typ.)@ ITM) █ General Description PNPN devices designed for high volume, line-powered consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits. Supplied in an inexpensive plastic TO-92 package which is readily adaptable for use in automatic insertion equipment. █ Absolute Maximum Ratings（Ta=25℃ unless otherwise specified） T s t g ——Storage Temperature ------------------------------------------------------ -40~125℃ T j ——Operating Junction Temperature ---------------------------------------------- -40~125℃ VDRM ——Repetitive Peak Off-State Voltage MCR100-6 ----------------------------------------------- 400V MCR100-8 -------------------------------------------- 600V IT（RMS）——R.M.S On-State Current（All Condition Angles）------------------------------------------ 0.8A IT(AV) ——Average On-State Current (Half Sine Wave : TC = 74 °C) ------------------------------------ 0.5A ITSM ——Surge On-State Current (1/2 Cycle, 60Hz, Sine Wave, Non-repetitive) ----------------------- 10A I2t ——Circuit Fusing Considerations(t = 8.3ms) ----------------------------------------------------- 0.415 A2s PGM ——Forward Peak Gate Power Dissipation (Ta=25℃) ---------------------------------------------- 0.1W PG(AV) ——Forward Average Gate Power Dissipation (Ta=25℃,t=8.3ms) -------------------------- 0.01W IFGM ——Forward Peak Gate Current --------------------------------------------------------------------------- 1A VRGM ——Reverse Peak Gate Voltage --------------------------------------------------------------------------- 5V Shantou Huashan Electronic Devices Co.,Ltd. HCR100 Series █ Electrical Characteristics（Ta=25℃, Rgk=1K ohm unless otherwise specified） Symbol IDRM Items Min. Typ. Repetitive Peak Off-State Current VTM Peak On-State Voltage (1) IGT Gate Trigger Current（2） VGT Gate Trigger Voltage (2) 1.2 Max. Unit 10 200 1.7 uA V VAK=VDRM or VRRM Ta=25℃ Ta=125℃ ITM=1A, Peak 200 uA VAK =7V, RL=100 ohm V VAK =7V, RL=100 ohm Ta=25℃ Ta=-40℃ V VAK =12V, RL=100 ohm Ta=125℃ 0.8 1.2 VGD IH Non-Trigger Gate Voltage Conditions 0.2 Holding Current Rth(j-c) Thermal Resistance 60.0 ℃/W VAK =12V,Gate open, initiating current=50mA Ta=25℃ Ta=-40℃ Junction to Case Rth(j-a) Thermal Resistance 150 ℃/W Junction to Ambient 2 5.0 10 mA 1. Forward current applied for 1 ms maximum duration,duty cycle ≤1%. 2. RGK current is not included in measurement █ Performance Curves FIGURE 1 – HCR100-8 CURRENT DERATING FIGURE 2 – HCR100-8 CURRENT DERATING (REFERENCE: AMBIENT TEMPERATURE) Tc, MAX ALLOWABLE CASE TEMPERATURE (℃) Ta, MAXIMUM ALLOWABLE AMBIENT TEMPERATURE (℃) (REFERENCE: CASE TEMPERATURE) IT(AV), AVERAGE ON-STATE CURRENT (AMP) IT(AV), AVERAGE ON-STATE CURRENT