NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H400S █ APPLICATIONS Low Frequency Power Amplifier. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-92 T stg ——Storage Temperature………………………… -55~150℃ T j ——Junction Temperature…………………………………150℃ PC——Collector Dissipation…………………………………900mW 1―Emitter，E 2―Collector，C 3―Base，B VCBO ——Collector-Base Voltage………………………………25V VCEO ——Collector-Emitter Voltage……………………………25V VE B O ——Emitter -Base Voltage………………………………5V I C —— Collector Current…………………………………… 1 A █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions BVCBO Collector-Base Breakdown Voltage ２５ Ｖ BVCEO Collector-Emitter Breakdown Voltage ２５ Ｖ BVEBO Emitter-Base Breakdown Voltage ５ Ｖ HFE（1） DC Current Gain ６０ ５６０ IE=10μA，IC=0 VCE=2V, IC=50mA HFE（2） DC Current Gain ３０ VCE=2V, IC=1A IC=10μA, IE=0 IC=1mA, IB=0 VCE(sat) Collector- Emitter Saturation Voltage ０．１ ０．３ Ｖ IC=0.5A, IB =50mA VBE(sat) Base-Emitter Saturation Voltage ０．８５ １．２ Ｖ IC=0.5A, IB =50mA ICBO Collector Cut-off Current １ IEBO Emitter Cut-off Current ICEO fT Cob Collector Cut-off Current １８０ １５ １ １ Current Gain-Bandwidth Product Output Capacitance μＡ VCB=20V, IE=0 μＡ VEB=4V, IC=0 μＡ VCE=20V, IB=0 ＭＨｚ VCE=10V, IC=50mA ｐＦ VCB=10V, IE=0，f=1ＭＨｚ █ hFE Classification E D ６０—１２０ １００—２００ F １６０—３２０ G ２８０—５６０