-. —. —-..-...,, ...— N-CHANNEL 2- MARCH . . .- 2N7000P MODE VERTICAL DMOS FET ISSUE “,.. ENHANCEMENT I 94 FEATURES * 60 Volt VcEo *R 0S(0.) = 5 ‘2 D G s v ABSOLUTE MAXIMUM lJ&h!sJ RATINGS. SYMBOL PARAMETER Drain-Source Voltage Continuous Pulsed Power ‘DS Drain Current Operating and Storage Drain-Source Voltage Gate-Source —Gate-Body Breakdown Threshold Voltage — Leakage Zero Gate Voltege MIN. BVDss 60 ‘GS(th) _ 0.8 ———. On-State ——-.— — .—— ~~ Drain Current(1) —.— .—— ID(m) Static Drain-Source Voltage (1) On-State ‘DS(on) Static Drain-Source Resistance (1) On-State RDs& (2) __, _ Common Source Capacitance (2) Output +150 \ UNIT CONDITIONS. v ID=l OIA, VGsOV v lD=lmA, 10 nA-- - ‘“ vG@ 1 1 UA mA — VD~48V, VDs48V, VG~O VG~OV, mA VDSIOV, VGF4.5V V v VGs.=10V,lD.500mA 2.5 0.4 5 T ‘; “- VD= 15V, “c .— VGs vD~=ov T=125°C(2) ;;~;;;$;%--– AL-P–E.-.; Capacitance I c 0ss 1 —. —-— Transfer 2A. -55to 1’ input Capacitance ——. .——. ——— ‘Reve;se mW ---–- q+f 75 ~ v -1 3 lD~s mA i 40 — MAX. lGSS Drain Current v mA — Ti:T~tg SYMBOL ‘– ’500 Ptot —— Range Temperature PARAMETER —- ——+— ‘GS at Tamb=250C UNIT 200 lDM Voltage Dissipation ~ 60 — ID at Tamb=250C Drain Current–- Gate-Source VALUE (2) ~ 25 5 I pF VD-725V, VGs:OV, f= 1MHz -4 pF —— ——— — --–— TurmOn Time (2)(3) 10 ns \ VDD=15V, lD=500mA ‘(on) ~ Rg=25Q, RL=25Q Turn-Off Time (2)(3) 10 ns Voff) I ) Measured under pulsed conditions. Width=300ps. Duty cycle <2% (2) Sample test. 1)Switching times measured with 50Q source impedance and <5ns rise time on a pulse generator c,,, 3-13 ~